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Distributed Wear levelling of Flash Memories [article]

Srimugunthan, K. Gopinath
2013 arXiv   pre-print
In the presence of flash memories, in addition, we should also ensure that the number of writes to these different flash storage nodes are evenly distributed, to ensure even wear of flash storage nodes  ...  For large scale distributed storage systems, flash memories are an excellent choice because flash memories consume less power, take lesser floor space for a target throughput and provide faster access  ...  Compared to the these approaches which take care of the flash memory wear leveling issues for RAID like scenarios, we have considered the flash wear leveling problem in the distributed file system level  ... 
arXiv:1302.5999v1 fatcat:thd7kqg3uzehjaetjxkksdqaba

Increasing Flash Memory Lifetime by Dynamic Voltage Allocation for Constant Mutual Information [article]

Tsung-Yi Chen, Adam R. Williamson, Richard D. Wesel
2014 arXiv   pre-print
Using the instantaneous storage capacity of a noisy flash memory channel, our approach allocates the read voltage of flash cell dynamically as it wears out gradually over time.  ...  This paper proposes an overall system approach based on information theory to extend the lifetime of a flash memory device.  ...  Wear-out noise Flash memory program/erase (P/E) cycling causes damage (i.e., wear-out) to the tunnel oxide of Flash memory cells in the form of charge trapping in the oxide and interface states [8] ,  ... 
arXiv:1403.4333v1 fatcat:jzibr536zjamhmns3uknirojiu

Increasing flash memory lifetime by dynamic voltage allocation for constant mutual information

Tsung-Yi Chen, Adam R. Williamson, Richard D. Wesel
2014 2014 Information Theory and Applications Workshop (ITA)  
Using the instantaneous storage capacity of a noisy flash memory channel, our approach allocates the read voltage of flash cell dynamically as it wears out gradually over time.  ...  This paper proposes an overall system approach based on information theory to extend the lifetime of a flash memory device.  ...  Wear-out noise Flash memory program/erase (P/E) cycling causes damage (i.e., wear-out) to the tunnel oxide of Flash memory cells in the form of charge trapping in the oxide and interface states [8] ,  ... 
doi:10.1109/ita.2014.6804242 dblp:conf/ita/ChenWW14 fatcat:eme44v3wcvhjpk2fvlgi7lgm4i

Comparative Analysis Study on SSD, HDD, and SSHD

Ms.Hepisuthar Et.al
2021 Turkish Journal of Computer and Mathematics Education  
SSD contains NAND flash memory to write the data in the drive. Based on the method and material of storing different. HDD and SSD feature well to upgrade with technology in Computer filed.  ...  The Abbreviation of SSHD is called the solid-state hybrid disk. A mixture of both secondary devices to enhance the performance of the system.  ...  SSD Wear Leveling Algorithms Although SLC NAND Flash memory provides a high level of performance, it still has a large lifespan.  ... 
doi:10.17762/turcomat.v12i3.1644 fatcat:2j4n2mtcezcrjeswfgx4664j5i

A group-based wear-leveling algorithm for large-capacity flash memory storage systems

Dawoon Jung, Yoon-Hee Chae, Heeseung Jo, Jin-Soo Kim, Joonwon Lee
2007 Proceedings of the 2007 international conference on Compilers, architecture, and synthesis for embedded systems - CASES '07  
For this reason, distributing erase operations evenly across the whole flash memory media is an important concern in designing flash memory storage systems.  ...  In this paper, we propose a memory-efficient group-based wear-leveling algorithm.  ...  The goal of the wear-leveling algorithm is to expand the lifetime of flash memory by distributing erase operations evenly across the whole flash memory media.  ... 
doi:10.1145/1289881.1289911 dblp:conf/cases/JungCJKL07 fatcat:bm6eltdqpnddnp27ua45q5wuki

RbWL: Recency-Based Static Wear Leveling for Lifetime Extension and Overhead Reduction in NAND Flash Memory Systems

Sang-Ho HWANG, Jong Wook KWAK
2018 IEICE transactions on information and systems  
The basic idea of RbWL is to execute static wear leveling at minimum levels, because the frequent migrations of cold data by static wear leveling cause significant overhead in a NAND flash memory system  ...  The evaluation results show that RbWL improves the lifetime of NAND flash memory systems by 52%, and it also reduces the overhead of wear leveling from 8% to 42% and from 13% to 51%, in terms of the number  ...  Figure 1 shows the distribution of erase counts in whole blocks when a dynamic wear leveling algorithm is used in NAND flash systems.  ... 
doi:10.1587/transinf.2018edl8076 fatcat:6utwcuxzsvhg3eaomhz7m7vozi

A high-performance wear-leveling algorithm for flash memory system

Ching-Che Chung, Duo Sheng, Ning-Mi Hsueh
2012 IEICE Electronics Express  
The proposed SGC outperforms existing designs in terms of wear evenness and low design complexity. The lifetime of the flash memory can be greatly lengthened by the proposed SGC.  ...  In this paper, a low-complexity high-performance wearleveling algorithm which named sequential garbage collection (SGC) for flash memory system design is presented.  ...  Acknowledgments This work was supported in part by the National Science Council of Taiwan, under Grant NSC100-2221-E-194-051.  ... 
doi:10.1587/elex.9.1874 fatcat:vqxrir555za5bclwz2u6fr3h6e

Diversifying wear index for MLC NAND flash memory to extend the lifetime of SSDs

Yeong-Jae Woo, Jin-Soo Kim
2013 2013 Proceedings of the International Conference on Embedded Software (EMSOFT)  
This paper proposes a new wear index for MLC NAND flash memory which takes into account more diverse properties of NAND flash memory.  ...  To overcome this limitation, SSDs require a sophisticated wear-leveling algorithm which distributes program/erase cycles evenly across all flash blocks.  ...  CONCLUSION The traditional wear-leveling algorithms try to distribute program/erase cycles evenly across all flash blocks.  ... 
doi:10.1109/emsoft.2013.6658584 dblp:conf/emsoft/WooK13 fatcat:wq46tejx4fhy5brehsar73t4xq

Endurance Enhancement of Flash-Memory Storage, Systems: An Efficient Static Wear Leveling Design

Yuan-Hao Chang, Jen-Wei Hsieh, Tei-Wei Kuo
2007 Proceedings - Design Automation Conference  
A static wear leveling mechanism is proposed with limited memory-space requirements and an efficient implementation.  ...  This work is motivated by the strong demand of reliability enhancement over flash memory.  ...  The objective of wear leveling is to have an even erase-count distribution of flash-memory blocks so that the endurance of flash memory could be improved.  ... 
doi:10.1109/dac.2007.375155 fatcat:q3lwhgt57nepxdaxmxoqq4vx54

Endurance enhancement of flash-memory storage systems

Yuan-Hao Chang, Jen-Wei Hsieh, Tei-Wei Kuo
2007 Proceedings - Design Automation Conference  
A static wear leveling mechanism is proposed with limited memory-space requirements and an efficient implementation.  ...  This work is motivated by the strong demand of reliability enhancement over flash memory.  ...  The objective of wear leveling is to have an even erase-count distribution of flash-memory blocks so that the endurance of flash memory could be improved.  ... 
doi:10.1145/1278480.1278533 dblp:conf/dac/ChangHK07 fatcat:645esoq7gjg75i3ilyrqoxhcce

A low-complexity high-performance wear-leveling algorithm for flash memory system design

Ching-Che Chung, Ning-Mi Hsueh
2012 2012 IEEE Asia Pacific Conference on Circuits and Systems  
In this paper, a low-complexity high-performance wear-leveling algorithm which named sequential garbage collection (SGC) for flash memory system design is presented.  ...  The proposed SGC outperforms existing designs in terms of wear evenness and low design complexity. The lifetime of the entire flash memory can be greatly lengthened by the proposed SGC.  ...  ACKNOWLEDGMENT The authors would like to thank their colleagues in S3 Lab of National Chung Cheng University for many fruitful discussions.  ... 
doi:10.1109/apccas.2012.6419105 dblp:conf/apccas/ChungH12 fatcat:iuorfcahhzf33doxclymdfirzu

FlashCache

Taeho Kgil, Trevor Mudge
2006 Proceedings of the 2006 international conference on Compilers, architecture and synthesis for embedded systems - CASES '06  
Our architecture uses a two level file buffer cache composed of a relatively small DRAM, which includes a primary file buffer cache, and a flash memory secondary file buffer cache.  ...  This is a result of using flash memory, which consumes orders of magnitude less idle power than DRAM and is twice as dense.  ...  Wear-level aware cache replacement The drawback of using flash memory is wear-out. Compared to DRAM, flash memory can only be written a fixed amount of times.  ... 
doi:10.1145/1176760.1176774 dblp:conf/cases/KgilM06 fatcat:tbfiqjsmi5f5dg64afz3tqprxa

RRWL: Round Robin-Based Wear Leveling Using Block Erase Table for Flash Memory

Seon Hwan KIM, Ju Hee CHOI, Jong Wook KWAK
2017 IEICE transactions on information and systems  
In this letter, we propose a round robin-based wear leveling (RRWL) for flash memory systems.  ...  Experiments show that RRWL increases the lifetime of flash memory by up to 47% and 14%, compared with BET and HaWL, respectively. key words: flash memory, wear leveling, hidden cold block problem, bit  ...  Wear leveling increases the lifetime of flash memory by equalizing the number of erases for each block and uses various information tables [1] .  ... 
doi:10.1587/transinf.2016edl8228 fatcat:y5stl4tp5je3nfuetstxrhxbhy

HiFlash: A History Independent Flash Device [article]

Bo Chen, Radu Sion
2015 arXiv   pre-print
However, HIFS cannot provide history independence when deployed on top of flash devices, as flash memory manages its own internal block placement, which is often inherently history dependent.  ...  In addition, we design a simple, yet history independence friendly wear-leveling mechanism that allows HiFlash to smartly and advantageously trade off a tunable small amount of history leakage for a significant  ...  The rationale of wear leveling is to move hot data around, such that writes and erasures can be distributed evenly among flash cells, prolonging the service life of flash memory.  ... 
arXiv:1511.05180v1 fatcat:sxgbfj6iofc3ljgx3lcivjwjby

Rejuvenator: A static wear leveling algorithm for NAND flash memory with minimized overhead

Muthukumar Murugan, David.H.C. Du
2011 2011 IEEE 27th Symposium on Mass Storage Systems and Technologies (MSST)  
Wear leveling helps to prevent the early wear out of blocks in the flash memory. In order to achieve efficient wear leveling, data is moved around throughout the flash memory.  ...  In this paper we propose a static wear leveling algorithm, named as Rejuvenator, for large scale NAND flash memory.  ...  This results in a high degree of unevenness in the distribution of wear in the blocks. 2) Static wear leveling: In contrast to dynamic wear leveling algorithms, static wear leveling algorithms attempt  ... 
doi:10.1109/msst.2011.5937225 dblp:conf/mss/MuruganD11 fatcat:fv7n6qz3njdmvcosq6u5wmqbdu
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