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Device Modeling and Measurement for RF Systems [chapter]

Franz Sischka
2000 IFIP Advances in Information and Communication Technology  
An absolute prerequisite for achieving this goal are accurate RF measurements, and correct de-embedding techniques.  ...  If, however, the underlying measurements are correct, and the models understood weil, RF modelling can provide very accurate design kits.  ...  And, as can be seen in figure 4, device models are the base of the complete system design.  ... 
doi:10.1007/978-0-387-35498-9_50 fatcat:x4bgyzm2rffidecixzpcjfutue

RWW 2022

2021 IEEE Microwave Magazine  
for RF, mm-Wave, and THz electronics. 3% Quantum devices, systems, and applications -Cryogenic RF devices, circuits, systems and interfaces for quantum computing and sensing applications.  ...  , hardware and software co-design for physical layer security, advanced devices and materials to enhance RF, mm-Wave, and THz physical layer security, trusted design, fabrication, packaging, and validation  ...  MHz-to-THz instrumentation for biological measurements and healthcare applications -Devices, components, circuits and systems for biological measurements and characterizations; biomedical therapeutic and  ... 
doi:10.1109/mmm.2021.3077169 fatcat:pnuateotazbsfch7wxqiytwexu

Behavioral macromodels of digital integrated circuits for RF immunity prediction

I. S. Stievano, E. Vialardi, F. G. Canavero
2007 2007 18th International Zurich Symposium on Electromagnetic Compatibility  
This paper addresses the generation of accurate macromodels of digital ICs accounting for both the functional and the out-of-band behaviour of devices.  ...  The approach is demonstrated on a real test board by injecting a RF noise disturbance into a digital IC: a systematic study comparing actual measurements and simulation predictions is carried out.  ...  In this work, all the parts composing the complete system in Fig. 1 , i.e., the coupled interconnect and the two devices are modeled by means of a suitable set of modeling methodologies, as suggested  ... 
doi:10.1109/emczur.2007.4388182 fatcat:kcqahernare7hlfti6ffclevby

The Dawn of the New RF-HySIC Semiconductor Integrated Circuits: An Initiative for Hybrid ICs Consisting of Si and Compound Semiconductors

Shigeo KAWASAKI, Akihira MIYACHI
2016 IEICE transactions on electronics  
To realize new semiconductor ICs, several component technologies for RF-HySIC are introduced in terms of chip/MMIC design, measurement, and breadboard model fabrication.  ...  A GaN diode structure, measurement and characterization of nonlinear devices, a GaN amplifier, and a GaAs MMIC are introduced as component technologies.  ...  Diode Modeling In this study, an SBD is used as a device for RF-to-DC conversion in nonlinear operation.  ... 
doi:10.1587/transele.e99.c.1085 fatcat:qfzd7nrv4zgjpfca5hirinhbti

IC models accounting for effects of EM noise

Igor S. Stievano, Flavio G. Canavero, Enrico Vialardi
2008 2008 International Symposium on Electromagnetic Compatibility - EMC Europe  
current waveforms of the model and real device.  ...  In this work, all the parts composing the complete system in Fig. 1 , i.e., the coupled interconnect and the two devices, are modeled by means of suitable modeling methodologies, as suggested in [2]  ... 
doi:10.1109/emceurope.2008.4786848 fatcat:kpi37zzdvzghdpt5k3qr4ui4um

Evaluation of Pulsed I–V Analysis as Validation Tool of Nonlinear RF Models of GaN-Based HFETs

Hassan Hirshy, Manikant Singh, Michael A. Casbon, Richard M. Perks, Michael J. Uren, Trevor Martin, Martin Kuball, Paul J. Tasker
2018 IEEE Transactions on Electron Devices  
This absence of correlation between pulsed I-V measurement results and RF performance raises a question about the applicability of pulsed I-V measurements alone as a tool for extracting nonlinear device  ...  transistor (HFET) models.  ...  A Keithley source measurement system was used for dc measurements and current transients while a dynamic pulsed current-voltage analysis system (AU4850) was used for pulse measurements.  ... 
doi:10.1109/ted.2018.2872513 fatcat:f33udrokvfblpikgoez4h7rbke

Model and Analysis of Multi Level Multi Frequency RF Rectifier Energy System for Low Power Supply Application Device

Budi Herdiana, Bobi Kurniawan
2017 TELKOMNIKA (Telecommunication Computing Electronics and Control)  
In the measurement, the mobile electronic devices placed at a distance about 5 meters from the energy source with the system voltage DC 3.7V, and have been obtained at the working frequency between 825  ...  The RF to DC rectifier circuit is a major component for changing the RF wave to an electronic current (DC).  ...  Testing and Measurement System testing is done to obtain system performance through the stages of theoretical approaches, simulation and measurement devices related to the power to be achieved.  ... 
doi:10.12928/telkomnika.v15i1.4051 fatcat:ycplj3tndfbhdjooxr6esk6kwe

Trace-Driven Simulation of LoRaWAN Air Channel Propagation in an Urban Scenario

Eugen Harinda, Hadi Larijani, Ryan M. Gibson
2020 Advances in Science, Technology and Engineering Systems  
This paper uses real-world measurements and a trace-driven simulation technique to evaluate the RF propagation models' prediction performance for LoRaWAN 868 MHz propagation.  ...  Second, LoRaWAN 868 MHz measurements have been used to perform a critical analysis of LoRaWAN trace-driven Radio Frequency (RF) propagation models and validation.  ...  LoRaWAN and RF conceptual system models comprise LoRa modulation, LoRaWAN network, RF propagation models, and the terrain model.  ... 
doi:10.25046/aj050625 fatcat:25miu45qbrb6bonrqjrjgkieza

Characterization of Dynamics and Power Handling of RF MEMS Using Vector Measurement Techniques

D. Girbau, A. Lazaro, L. Pradell
2004 IEEE transactions on microwave theory and techniques  
This paper proposes a new method to measure dynamics and power handling of RF microelectromechanical systems (MEMS) devices based on a mobile membrane.  ...  Both one-port (capacitors) and two-port devices (switches and extended tuning-range capacitors) can be measured.  ...  standards, and are known from the models provided for the on-wafer calkit standards ( for an ideal case).  ... 
doi:10.1109/tmtt.2004.837198 fatcat:ej23f5fchrdvvpgb2aaofhu5ya

Pulsed Measurements [chapter]

Anthony Parker, James Rathmell, Jonathan Scott
2007 Electrical Engineering Handbook  
For example, with combined pulsed-I/V and pulsed-RF systems, the RF must be turned off while measuring DUT current.  ...  Pulsed Measurement Equipment Anthony E. Parker Pulsed measurement systems comprise subsystems for applying bias, pulse and RF stimuli, and for sampling current, voltage, and RF parameters.  ... 
doi:10.1201/9781420006704.ch8 fatcat:vsc2syldc5hxpmgainc6idx7fm

The Three Musketeers of Large Signal RF and Microwave Design-Measurement, Modeling and CAE

Marc Vanden Bossche, Frans Verbeyst, Jan Verspecht
1999 53rd ARFTG Conference Digest  
This paper explains and illustrates that the voltage-current behavior of nonlinear devices, components and systems is the basis for a framework for the large signal RF and microwave design and manufacturing  ...  This framework spans measurement, modeling and CAE technology in a coherent way. )LJXUH &RPSDULVRQ RI WKH PHDVXUHPHQW [ DQG H[WUDFWHG IUHTXHQF\ GRPDLQ EODFNER[ PRGHO ³ 9 -W 9 .  ...  Conclusions Modeling, measuring and simulation are the three musketeers for effective RF and microwave design.  ... 
doi:10.1109/arftg.1999.327336 fatcat:mhwlhzxhgfcfzfcj7bzymtrwve

Pulsed Measurements [chapter]

Anthony Parker, James Rathmell, Jonathan Scott
2002 Commercial Wireless Circuits and Components Handbook  
For example, with combined pulsed-I/V and pulsed-RF systems, the RF must be turned off while measuring DUT current.  ...  Pulsed Measurement Equipment Anthony E. Parker Pulsed measurement systems comprise subsystems for applying bias, pulse and RF stimuli, and for sampling current, voltage, and RF parameters.  ... 
doi:10.1201/9781420039962.ch18 fatcat:6cik3xatbzdlxp7u24vlcoz3j4

A New Methodology for Efficient and Reliable Large- Signal Analysis of RF Power Devices [chapter]

Choshu Ito, Olof Tornblad, Gordon Ma, Robert W. Dutton
2004 Simulation of Semiconductor Processes and Devices 2004  
In RF power device design, much of the analysis is based on measurements.  ...  Results show that circuit simulations using an extracted Root model agree well with device simulation for the intrinsic device.  ...  devices using equipment such as the Agilent Pulsed Modeling System.  ... 
doi:10.1007/978-3-7091-0624-2_87 fatcat:qirg7fzdzraezg2d2vvj3i2j3a

Radio-frequency transport Electromagnetic Properties of chemical vapour deposition graphene from direct current to 110 MHz

Shakil A. Awan, Bing Li, Genhua Pan, Nawfal Jamil, Laith M. Al Taan
2015 IET Circuits, Devices & Systems  
These results suggest that our new RF 4TP method is in good agreement with the conventional DC four-probe method for measuring the intrinsic sheet resistance of single-atom thick materials and could potentially  ...  open up new applications in RF electronics, AC quantum Hall effect metrology and sensors based on graphene 4TP devices operating over broad range of frequencies.  ...  Kibble, Dr David Hasko, Dr Tawfique Hasan, Dr Antonio Lombardo and Prof Mohammed Z. Ahmed for useful discussions and Graphene Square Inc. for providing the graphene sample. References  ... 
doi:10.1049/iet-cds.2014.0204 fatcat:bdq7lumqxvcivnmcbqrhqbdbfi

Time-domain envelope measurements for characterization and behavioral modeling of nonlinear devices with memory

F. Macraigne, T. Reveyrand, G. Neveux, D. Barataud, J.-M. Nebus, A. Soury, E. NGoya
2006 IEEE transactions on microwave theory and techniques  
This paper presents a calibrated four-channel measurement system for the characterization of nonlinear RF devices such as power amplifiers.  ...  This characterization tool is also well suited for the extraction and validation of behavioral bilateral models of nonlinear RF analog equipment exhibiting memory effects.  ...  Mallet and F. Gizard, both with the National French Space Agency, Toulouse, France, for their helpful assistance.  ... 
doi:10.1109/tmtt.2006.879169 fatcat:fjcedquixvds5hytudfo7uayvq
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