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Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS process

Yi-Hsin Weng, Hui-Wen Tsai, Ming-Dou Ker
2011 Microelectronics and reliability  
A new charge pump circuit has been proposed to suppress the return-back leakage current without suffering the gate-oxide reliability problem in low-voltage CMOS process.  ...  A test chip has been implemented in a 65-nm CMOS process to verify the proposed charge pump circuit with four pumping stages.  ...  This work was supported by National Science Council (NSC), Taiwan, under Contract of NSC 99-2220-E-009-021 and in particularly supported by the ''Aim for the Top University Plan'' of National Chiao-Tung  ... 
doi:10.1016/j.microrel.2010.12.016 fatcat:4dq4ok3fjbblrh5yvyu7lf2nre

Design of charge pump circuit in low-voltage CMOS process with suppressed return-back leakage current

Yi-Hsin Weng, Hui-Wen Tsai, Ming-Dou Ker
2010 2010 IEEE International Conference on Integrated Circuit Design and Technology  
A new charge pump circuit has been proposed to suppress the return-back leakage current without suffering the gate-oxide overstress problem in low-voltage CMOS process.  ...  By reducing the return-back leakage current and without suffering gate-oxide reliability problem, the new proposed charge pump circuit is suitable for the applications in low-voltage CMOS IC products.  ...  ACKNOWLEDGMENT The authors would like to thank Taiwan Semiconductor Manufacturing Company (TSMC) for their support on chip fabrication.  ... 
doi:10.1109/icicdt.2010.5510271 fatcat:tnqy56aeyrdrfoib4uturluz7e

A new method to improve the phase noise performance of the frequency synthesizer for UHF RFID

Qingshan Liu, Changchun Chai, Yuqian Liu
2019 IEICE Electronics Express  
At the same time, the loop linearity is improved by the use of operational amplifier tracking technology. The chip is fabricated in a 0.13 µm RF CMOS technology with a single 1.2 V power supply.  ...  drift was suppressed.  ...  Charge pump design One of the problems in charge pump design is the mismatch between PMOS current source and NMOS current source.  ... 
doi:10.1587/elex.16.20181151 fatcat:ovbfvblfqza4zee7io4qqrj5ke

A 0.65-V 2.5-GHz Fractional-N Synthesizer With Two-Point 2-Mb/s GFSK Data Modulation

Shih-An Yu, Peter Kinget
2009 IEEE Journal of Solid-State Circuits  
We present ultra-low-voltage circuit design techniques for a fractional-N RF synthesizer with two-point modulation which was realized in 90-nm CMOS using only regular V T devices.; the voltage controlled  ...  oscillator, phase-frequency detector and charge pump operate from a 0.5 V supply while the divider uses a 0.65 V supply.  ...  assisting with the measurement setup and automation, Altera for donation of the FPGA board, Integrand Software for the use of the EMX simulator, and UMC for chip prototype fabrication.  ... 
doi:10.1109/jssc.2009.2023156 fatcat:lgohw2barzed5ohopqspdhpd5u

Nanometer MOSFET Variation in Minimum Energy Subthreshold Circuits

Naveen Verma, Joyce Kwong, Anantha P. Chandrakasan
2008 IEEE Transactions on Electron Devices  
degrade the fundamental device characteristics critical to circuit operation by several orders of magnitude.  ...  This paper investigates those characteristics and presents design methodologies and circuit topologies to manage their severe degradation.  ...  Hence, a simple charge pump circuit is used to provide over 500× current gain without any increase in the device sizes.  ... 
doi:10.1109/ted.2007.911352 fatcat:tj2phyqetndw5ht7u367tf4a5m

Intelligent CMOS control of RF MEMS capacitive switches

G. Ding, W. Wang, S. Halder, C. Palego, D. Molinero, J. C. M. Hwang, C. L. Goldsmith
2012 2012 IEEE/MTT-S International Microwave Symposium Digest  
viii List of Tables Table 1- Innovative designs were used to allow the CMOS circuit to sense low capacitance of tens of femto-farats, and to handle high voltage up to ±40 V.  ...  The novelty of this design of CMOS control circuit lies in the handling of high voltages by using low-voltage (3.3 V) CMOS technology and a unique capacitance sensing technique that can convert the capacitance  ... 
doi:10.1109/mwsym.2012.6257781 fatcat:vv2kj2vnpfgzrefnbywoyywiua

Phase-locking in wireline systems: Present and future

Behzad Razavi
2008 2008 IEEE Custom Integrated Circuits Conference  
This paper describes the challenges in the design of phaselocked loops and clock and data recovery circuits as speeds approach 80-100 Gb/s.  ...  Skew and jitter issues are presented and the effect of reference phase noise, charge pump noise, reference spurs, and loop filter leakage is quantified.  ...  As illustrated inFig. 10 [12], the leakage current I G discharges the loop filter while the Fig. 10 . 10 Effect of gate leakage on PLL performance. charge pump is off.  ... 
doi:10.1109/cicc.2008.4672162 dblp:conf/cicc/Razavi08 fatcat:2rixwdwhjbd2ffed32dr6tvtea

Chemical bionics - a novel design approach using Ion Sensitive Field Effect Transistors

Pantelis Georgiou, Chris Toumazou
2008 2008 IEEE Biomedical Circuits and Systems Conference  
A Unified Model By addition of the passivation capacitance and the offset voltage due to the trapped charge a more accurate model for the CMOS ISFET can be created to be used for circuit design.  ...  The circuits of I Ca and I K are designed in a similar fashion. The device sizes were chosen to have large areas to reduce low frequency flicker noise and reduce mismatch due to process variation.  ...  The PG-ISFET was presented in Chapter 4 as a solution to programming this threshold voltage.  ... 
doi:10.1109/biocas.2008.4696916 fatcat:gpp7jxugwjarnakqghdguz3xwm

SiGe BiCMOS integrated circuits for high-speed serial communication links

D. J. Friedman, M. Meghelli, B. D. Parker, J. Yang, H. A. Ainspan, A. V. Rylyakov, Y. H. Kwark, M. B. Ritter, L. Shan, S. J. Zier, M. Sorna, M. Soyuer
2003 IBM Journal of Research and Development  
Highlighted in this paper are the key challenges in mixed-signal and analog integrated circuit design at such ultrahigh data rates, and the solutions which leverage high-speed and microwave design and  ...  SiGe BiCMOS integrated circuits for highspeed serial communication links Considerable progress has been made in integrating multi-Gb/s functions into silicon chips for data-and telecommunication applications  ...  Acknowledgment The authors wish to acknowledge the SiGe technology group of the IBM Microelectronics Division for chip fabrication. They also wish to thank K. Jenkins, D. Heidel  ... 
doi:10.1147/rd.472.0259 fatcat:xsqocvb2fbf4rg32auvoowwply

Four-element phased-array antenna systems monolithically integrated on silicon

Taeksoo Ji, Hargsoon Yoon, K. A. Jose, Vijay K. Varadan, Vijay K. Varadan
2004 Smart Structures and Materials 2004: Smart Electronics, MEMS, BioMEMS, and Nanotechnology  
its high phase shift capability (~30 o /dB), low leakage current level (~300nA at a bias voltage of 100V) and notably high operational reliability.  ...  Of the various types of antennas, microstrip antennas would be a good common element in constructing the array antenna due to their low cost, low weight, conformability, and easy integration into arrays  ...  In general, to realize metal circuits on a HRS substrate, an oxide layer (SiO 2 ) must be grown before metal deposition to suppress a DC leakage current.  ... 
doi:10.1117/12.548432 fatcat:y3n573cvhvhpziih5gjupsm6ve

Challenges and future directions for the scaling of dynamic random-access memory (DRAM)

J. A. Mandelman, R. H. Dennard, G. B. Bronner, J. K. DeBrosse, R. Divakaruni, Y. Li, C. J. Radens
2002 IBM Journal of Research and Development  
Although a variety of options exist for advancing the technology, such as low-voltage operation, vertical MOSFETs, and novel capacitor structures, uncertainties exist about which way to proceed.  ...  , and processing.  ...  Acknowledgments The authors thank the members of the IBM-Infineon DRAM development team, as well as colleagues in the IBM Research Division, for valuable contributions to the development of the technology  ... 
doi:10.1147/rd.462.0187 fatcat:f64ogele5fgfxecb3e54dgmcym

Synchronous Rectifier for High-Frequency Switch Mode Power Supplies using Phase Locked Loops

Jens Christian Hertel, Jacob Elias FCaster Overgaard, Ivan Harald Holger Jorgensen, Toke Meyer Andersen, Martin Rodgaard, Arnold Knott
2019 IEEE Journal of Emerging and Selected Topics in Power Electronics  
An application specific integrated circuit containing a PLL designed for a synchronous rectifier was taped out in a 0.18 µm CMOS process.  ...  The designed PLL achieves a sufficient phase noise performance, of 8 ns RMS jitter, which from simulations have been shown to have a minimal impact on the efficiency.  ...  Low Pass Filter The low pass filter is a 3rd order RC-network, which filters the output current of the charge pump to the control voltage of the VCO.  ... 
doi:10.1109/jestpe.2019.2945542 fatcat:z5vhe4ad7bchxlkhn6anghz4rq

- Data Converters [chapter]

2018 CMOS  
Kris is also a President of CMOS Emerging Technologies Research Inc (, an organization of high-tech events covering Communications, Microsystems, Optoelectronics, and Sensors.  ...  Redlen's revolutionary production process for advanced semiconductor materials enables a new generation of more accurate, alldigital, radiation-based imaging solutions.  ...  charge and I L is the leakage current.  ... 
doi:10.1201/b18599-16 fatcat:omg6t2lgzzfobpksa6uuwrkeya

Analog Switches and Multiplexers [chapter]

Walt Kester
2005 Data Conversion Handbook  
expands SPI chip selects 11 Circuit connection adds current-mode operation to PFM boost converters 12 Voltage-inverter IC forms high-efficiency rail splitter 13 23 Delay Lines • 3-in-1 silicon delay lines  ...  Semicustom "QuickChip" ASICs implement RF functions to 9GHz 3 A silicon bipolar broadband PLL building block integrated circuit 4 Low power silicon BJT LNA for 1.9GHz 8 DESIGN SHOWCASE Serial-control multiplexer  ...  Acknowledgment: The authors wish to thank Larry Blue, Tom Jackson, and Steve Rosenbaum from Hughes Network Systems and Will Grimes from Maxim Integrated Products for their help in the development of the  ... 
doi:10.1016/b978-075067841-4/50030-0 fatcat:fqzt3xz2jnhbhmlneufjwwi2u4

RF Energy Harvesting for Ubiquitous, Zero Power Wireless Sensors

Warda Saeed, Nosherwan Shoaib, Hammad M. Cheema, Muhammad U. Khan
2018 International Journal of Antennas and Propagation  
The current challenges in rectenna design and a detailed comparison of state-of-the-art rectennas are also presented.  ...  Being less costly and environment friendly, rectennas are used to provide potentially inexhaustible energy for powering up low power sensors and portable devices that are installed in inaccessible areas  ...  Conflicts of Interest The authors declare that there is no conflict of interest regarding the publication of this paper.  ... 
doi:10.1155/2018/8903139 fatcat:qkaklvzlevbivmt4j43qcnlic4
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