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Impact of MOSFET Gate-Oxide Reliability on CMOS Operational Amplifier in a 130-nm Low-Voltage Process
2008
IEEE transactions on device and materials reliability
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The effect of the MOSFET gate-oxide reliability on operational amplifier is investigated with the two-stage and folded-cascode structures in a 130-nm low-voltage CMOS process. ...
The test operation conditions include unity-gain buffer (close-loop) and comparator (open-loop) configurations under the dc stress, ac stress with dc offset, and large-signal transition stress. ...
It was less of a problem for old CMOS technologies, which have the thick gate oxide. ...
doi:10.1109/tdmr.2008.922016
fatcat:tw5wzd4paras3fqsywwoahzpiq
An RF Stress-Based Thermal Shock Test Method for a CMOS Power Amplifier
2021
IEEE Journal of the Electron Devices Society
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To accelerate the degradation of critical specifications of CMOS power amplifiers (PAs), this paper proposes a new measurement method that introduces radio frequency (RF) stress in the thermal shock test ...
INDEX TERMS Thermal shock test, radio frequency stress, CMOS power amplifier, performance degradation. ...
DESIGNED PA AND EXPERIMENTAL SETUP A. THE DESIGNED PA Here, a 0.1-1.2 GHz CMOS PA first has been designed and fabricated as the sample for the thermal shock test [16] . ...
doi:10.1109/jeds.2021.3121132
fatcat:j3pox7vdqnh35kzhrfocrbhily
A Comparative Study of On-Chip CMOS S&H Voltage Sensors for Power Integrity: SOI vs. Bulk
2021
2021 IEEE International Joint EMC/SI/PI and EMC Europe Symposium
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This paper evaluates the performance of two onchip sample & hold (S&H) voltage sensors, usable for power integrity measurements, with the aim to compare silicon-oninsulator (SOI) & bulk CMOS technologies ...
), and a larger occupied area. ...
Tual from Microchip Nantes for the fruitful discussion related to the current source design. ...
doi:10.1109/emc/si/pi/emceurope52599.2021.9559242
fatcat:of42q44pffbg7c4kkatgeymjpq
The Impact of Gate-Oxide Breakdown on Common-Source Amplifiers With Diode-Connected Active Load in Low-Voltage CMOS Processes
2007
IEEE Transactions on Electron Devices
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The test conditions of this work include the dc stress, ac stress with dc offset, and large-signal transition stress under different frequencies and signals. ...
The influence of gate-oxide reliability on commonsource amplifiers with diode-connected active load is investigated with the nonstacked and stacked structures under analog application in a 130-nm low-voltage ...
It was less of a problem for the old CMOS technologies, which had a thick gate oxide. ...
doi:10.1109/ted.2007.906938
fatcat:6ry2dfcb5rcjlbux4v5vcnw7mu
Lifetime Study of COTS ADC for SBND LAr TPC Readout Electronics
[article]
2018
arXiv
pre-print
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As an enabling technology for noble liquid detectors in neutrino experiments, cold electronics developed for extremely low temperature (77K - 89K) decouples the electrode and cryostat design from the readout ...
Based on the current test data, the preliminary lifetime projection of AD7274 is about 6.1 × 10^6 years at 2.5V operation at cryogenic temperature, which means the HCE degradation is negligible during ...
by stress test for samples under the stress voltages. ...
arXiv:1806.09226v1
fatcat:4jppbtbh75hvpb7wgk6iilhswq
A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization
2021
Micromachines
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The experimental characterization includes an accurate extraction of the electromechanical parameters for the three fabricated structures that enables an accurate MEMS-CMOS circuitry co-design. ...
This paper presents a transimpedance amplifier (TIA) fabricated using a commercial 0.35-µm CMOS technology specifically oriented to drive and sense monolithically integrated CMOS-MEMS resonators up to ...
Perelló-Roig thanks his grant FPU-16/01758 from the Spanish Ministry of Education, Culture and Sport.
Conflicts of Interest: The authors declare no conflict of interest. ...
doi:10.3390/mi12010082
pmid:33467477
fatcat:jrjw2yixenfq3pit4osqmtzypa
Design Architectures of the CMOS Power Amplifier for 2.4 GHz ISM Band Applications: An Overview
2019
Electronics
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This article describes the different state-of-the art design architectures of CMOS PA, including their circuit operations, and analyzes the performance of PAs for 2.4 GHz ISM (industrial, scientific, and ...
A well-defined architecture, including a linear and simple functional block synthesis, is critical in designing CMOS PA for various applications. ...
Conflicts of Interest: The authors declare no conflict of interest. ...
doi:10.3390/electronics8050477
fatcat:hmqn476rgrbpxcwlwmlnebxnvy
Hierarchical extreme-voltage stress test of analog CMOS ICs for gate-oxide reliability enhancement
2004
Proceedins of the 14th ACM Great Lakes symposium on VLSI - GLSVLSI '04
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Our recent stress tests of analog/mixed-signal CMOS ICs for gate-oxide reliability enhance. ...
Extreme-voltage stress test aims at enhancing both quality and reliability without performance the high-cost burn-in test process. ...
High-voltage screening, or referred to as extreme-voltage screening, aims at improving the quality level of CMOS ICs without performing the high-cost burn-in process. ...
doi:10.1145/988952.989030
dblp:conf/glvlsi/WeyKLW04
fatcat:v5bvgptdi5ebjbrxfj5ue6o5ki
A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier
2008
IEEE Journal of Solid-State Circuits
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It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135 C under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million ...
Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. ...
The PA has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. ...
doi:10.1109/jssc.2008.2004870
fatcat:5kpjqrvanbb2raijroqtn76klu
A Fully Integrated Quad-Band GSM/GPRS CMOS Power Amplifier
2008
Digest of technical papers / IEEE International Solid-State Circuits Conference
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It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135 C under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million ...
Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. ...
The PA has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. ...
doi:10.1109/isscc.2008.4523311
dblp:conf/isscc/AokiKMABZHMH08
fatcat:yrzorwhmcbexxmqt2s2pynkbou
40-Gb/s circuits built from a 120-GHz f/sub T/ SiGe technology
2002
IEEE Journal of Solid-State Circuits
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We also demonstrate a range of analog elements, including a lumped limiting amplifier which operates with a 35-GHz bandwidth, a transimpedance amplifier with 220gain and 49.1-GHz bandwidth, a 21.5-GHz ...
Product designs for 40-Gb/s applications fabricated from SiGe BiCMOS technologies are now becoming available. ...
ACKNOWLEDGMENT The authors would like to thank the project management team for managing the successful multiproject wafers, the measurement team for outstanding device measurements, and the multitude of ...
doi:10.1109/jssc.2002.801170
fatcat:klcl7qn55vdghevk4haz3dq56m
Foundry Service of CMOS MEMS Processes and the Case Study of the Flow Sensor
2022
Processes
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Finally, the advantages of the CMOS MEMS flow sensors are justified and discussed by the testing results. ...
After being integrated with an on-chip amplifier gain of 20 dB, the overall sensitivity of the flow sensor was measured and substantially improved to 1388 µV/V/(m/s)/mW for the flow speed range of 0–5 ...
for flow sensor testing; and (d) testing result of the fabricated CMOS MEMS self-heating sensor with integrated amplifier circuit in Section 4.3. ...
doi:10.3390/pr10071280
fatcat:tsoy3vqgongo7eqv25uykvc7tq
Mechanical effects of fatigue and charge on CMOS MEMS
2000
MEMS Reliability for Critical Applications
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Cracks are first induced inside the stiffest layers, often silicon dioxide, in laterally resonant test structures with cyclic stress of 620 MPa. ...
Devices with a fixed dc actuation voltage experienced a change in the electrostatic force attributed to charge accumulation in polymer and oxide layers. ...
However, 70 MPa was the limit of the devices tested, and future work should include testing of similar resonant devices designed for stress concentrations in the range of 70 MPa to 124 MPa. ...
doi:10.1117/12.395699
fatcat:bf634mkgpfeabkjglful6q6qaa
A new approach to designing electronic systems for operation in extreme environments: Part I - The SiGe Remote Sensor Interface
2012
IEEE Aerospace and Electronic Systems Magazine
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by the need to amplify relatively large charge amplitudes at low frequencies with a maximum rail voltage The operating frequency of the switch sampler and Butterworth filter can be configured from 5 kHz ...
All control signals are serially loaded and contain a scan path for use in test mode. ...
doi:10.1109/maes.2012.6328550
fatcat:czlvclvb3bdwrjxvrcucxgsgcm
An integrated CMOS micromechanical resonator high-Q oscillator
1999
IEEE Journal of Solid-State Circuits
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A series resonant oscillator design is discussed that utilizes a unique, gain-controllable transresistance sustaining amplifier. ...
A completely monolithic high-Q Q Q oscillator, fabricated via a combined CMOS plus surface micromachining technology, is described, for which the oscillation frequency is controlled by a polysilicon micromechanical ...
Fang for assistance in CMOS fabrication as well as K. Voros and the staff of the Berkeley Microfabrication Laboratory for process support. ...
doi:10.1109/4.753677
fatcat:awv63erwuvgbljn4xys7a3xi5m
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