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2020 Index IEEE Transactions on Terahertz Science and Technology Vol. 10

<span title="">2020</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/qci6rxcxena3hk72dlxoom3cum" style="color: black;">IEEE Transactions on Terahertz Science and Technology</a> </i> &nbsp;
Yang, X., +, TTHZ March 2020 158-166 Design, Fabrication, and Cold Test of a High Frequency System for an H-Band Sheet Beam Travelling Wave Tube.  ...  Hassona, A., +, TTHZ May 2020 321-330 MMIC amplifiers Nongalvanic Generic Packaging Solution Demonstrated in a Fully Inte- grated D-Band Receiver.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/tthz.2020.3037567">doi:10.1109/tthz.2020.3037567</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/gmfowpt735c7fizimkmhev3rpm">fatcat:gmfowpt735c7fizimkmhev3rpm</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20210428133604/https://ieeexplore.ieee.org/ielx7/5503871/9246957/09259260.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/fa/2f/fa2f70c63372949b51f2e3214fbd055661bac392.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/tthz.2020.3037567"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology

Dalal Fadil, Vikram Passi, Wei Wei, Soukaina Ben Salk, Di Zhou, Wlodek Strupinski, Max C. Lemme, Thomas Zimmer, Emiliano Pallecchi, Henri Happy, Sebastien Fregonese
<span title="2020-03-23">2020</span> <i title="MDPI AG"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/smrngspzhzce7dy6ofycrfxbim" style="color: black;">Applied Sciences</a> </i> &nbsp;
An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less than 0.5 dB.  ...  It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz.  ...  Some RF and millimeter wave circuits 28 based on graphene transistors have been reported with for example, a low noise amplifier (LNA) and 29 a mixer working around 10 to 20GHz [10], ring oscillator [  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/app10062183">doi:10.3390/app10062183</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/lbu3jekkwffdjp5l7ks76f4r7i">fatcat:lbu3jekkwffdjp5l7ks76f4r7i</a> </span>
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Terahertz band: Lighting up next-generation wireless communications

Hongqi Zhang, Lu Zhang, Xianbin Yu
<span title="">2021</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/dutnml745vfkjhzjbpu44ch2su" style="color: black;">China Communications</a> </i> &nbsp;
With the explosion of wireless data rates, the terahertz (THz) band (0.1-10 THz) is envisioned as a promising candidate to break the existing bandwidth bottleneck and satisfy the ever-increasing capacity  ...  In this paper, an overview on the state-of-the-art THz communications is studied, with a special focus on key technologies of THz transceivers and THz communication systems.  ...  In this system, a baseband signal from a signal generator and a LO signal is fed into a X-band mixer to generate an IF signal.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.23919/jcc.2021.05.010">doi:10.23919/jcc.2021.05.010</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/mxqtpnprk5bttfwbxndg3faa6m">fatcat:mxqtpnprk5bttfwbxndg3faa6m</a> </span>
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VLSI DCS 2020 Table of Contents

<span title="">2020</span> <i title="IEEE"> 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS) </i> &nbsp;
Mourya 100 15W Hybrid GaN Power Amplifier through Microstrip Radial Stub 4W GaN MMIC for X-band Radar Applicaions 474-478 Sriharsha Vardhan, Deepali Pathak, Manish Mendhe, Ashudeb Dutta 101 A 2.5mW Low-Power  ...  Design of Modified Grounded Microstrip Antenna for Dual Band operation in Wireless Estimation of Power and Delay of CMOS Phase Detector and Phase-Frequency Detector using nano Dimensional MOS Transistor  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/vlsidcs47293.2020.9179919">doi:10.1109/vlsidcs47293.2020.9179919</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/6f5h5rbnfncajlodgye5yrg57m">fatcat:6f5h5rbnfncajlodgye5yrg57m</a> </span>
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2019 Index IEEE Transactions on Microwave Theory and Techniques Vol. 67

<span title="">2019</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/erxfd52o45errblyxi5hcekfku" style="color: black;">IEEE transactions on microwave theory and techniques</a> </i> &nbsp;
., +, TMTT Dec. 2019 5249-5256 D-Band and G-Band High-Performance GaN Power Amplifier MMICs. An Accurate Characterization of Capture Time Constants in GaN HEMTs.  ...  Guo, X., +, TMTT April 2019 1308-1315 A New Synthesis and Design Approach of a Complex Termination Impedance Bandpass Filter.  ...  Power demand Design of Reconfigurable dB-Linear Variable-Gain Amplifier and Switchable-Order g m -C Filter in 65-nm CMOS Technology. Liu  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/tmtt.2019.2953035">doi:10.1109/tmtt.2019.2953035</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/hyq2vngaxrcqlggu7bzcbzdyba">fatcat:hyq2vngaxrcqlggu7bzcbzdyba</a> </span>
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Modelling of field-effect transistors based on 2D materials targeting high-frequency applications [article]

Francisco Pasadas
<span title="2017-09-05">2017</span> <i > arXiv </i> &nbsp; <span class="release-stage" >pre-print</span>
Graphene, a one-atom-thick of carbon, is a promising material for high-frequency applications due to its intrinsic superior carrier mobility and very high saturation velocity.  ...  This thesis presents a body of work on the modelling, performance prediction and simulation of GRM-based field-effect transistors and circuits.  ...  This compact model has the potential of being a useful tool for designing complex MMICs based on graphene.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener" href="https://arxiv.org/abs/1709.01324v1">arXiv:1709.01324v1</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/6wsrs4xv55c2rclm6zsg7znmpm">fatcat:6wsrs4xv55c2rclm6zsg7znmpm</a> </span>
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Transport conductivity of graphene at RF and microwave frequencies

S A Awan, A Lombardo, A Colli, G Privitera, T S Kulmala, J M Kivioja, M Koshino, A C Ferrari
<span title="2016-02-18">2016</span> <i title="IOP Publishing"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/3keip6eihranrnhkscvtelxz24" style="color: black;">2D Materials</a> </i> &nbsp;
This can lead to optimized design of high-speed analogue field-effect transistors, mixers, frequency doublers, low-noise amplifiers and radiation detectors.  ...  The graphene channel is modelled as a parallel resistive-capacitive network with a frequency dependence identical to that of the Drude conductivity with momentum relaxation time~2.1ps, highlighting the  ...  Acknowledgments We acknowledge funding from EU Graphene Flagship  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1088/2053-1583/3/1/015010">doi:10.1088/2053-1583/3/1/015010</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/tygiv5hsyjcjxkemkrdc3uj27i">fatcat:tygiv5hsyjcjxkemkrdc3uj27i</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20190430025130/https://pearl.plymouth.ac.uk/bitstream/handle/10026.1/4909/Awan_Graphene_Waveguides_2016.pdf;jsessionid=F6D30E38922FC4DE72FD14D90ED3333C?sequence=1" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/b7/78/b778800187f9df59580302a521cb41d3e409a859.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1088/2053-1583/3/1/015010"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> iop.org </button> </a>

2020 Index IEEE Transactions on Microwave Theory and Techniques Vol. 68

<span title="">2020</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/erxfd52o45errblyxi5hcekfku" style="color: black;">IEEE transactions on microwave theory and techniques</a> </i> &nbsp;
and Analysis of a Broadband Schottky Diode Noise Source Up To 325 GHz Based on 55-nm SiGe BiCMOS Technology; 2268-2277 Ghannouchi, F.M., see Chen, L., 2796-2807 Ghannouchi, F.M., see Dhar, S.K., TMTT  ...  for X-Ku Band Applications; TMTT April 2020 1553-1563 Ghorbani, K., see 1954-1963 Gibiino, G.P., see Martin-Guerrero, T.M., 1627-1636 Gidoni, T., see 2030-2040 Gigoyan, S., see Rahimian Omam, Z., TMTT  ...  ., +, TMTT Jan. 2020 365-376 Design of E-and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/tmtt.2021.3049615">doi:10.1109/tmtt.2021.3049615</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/kik4orti4je4xdsgazdbmdoopy">fatcat:kik4orti4je4xdsgazdbmdoopy</a> </span>
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European Microwaves

Roberto Sorrentino, Jan Grahn
<span title="">2012</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/4dugkdhgprfongiie56p2ltdbu" style="color: black;">IEEE Microwave Magazine</a> </i> &nbsp;
In 1980, the same group manufactured the first X-band coplanar monolithic GaAs balanced amplifier.  ...  and submillimetric band, 6) MMIC circuits for onboard space applications: Galileo program and Planck mission, 7) modelling of GaN HEMTs and high voltage LDMOS, 8) high efficiency power amplifiers and  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/mmm.2012.2185392">doi:10.1109/mmm.2012.2185392</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/lzaegsxg2zacbhj54lii2ar34a">fatcat:lzaegsxg2zacbhj54lii2ar34a</a> </span>
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Table of contents

<span title="">2019</span> <i title="IEEE"> 2019 Photonics &amp; Electromagnetics Research Symposium - Fall (PIERS - Fall) </i> &nbsp;
Transmission and X-band Absorption . . . . . . . . . . . . . . . . . . . . . . . . 855 Multi-layered Parallel Plate Waveguide with Electrically and Magnetically Biased Graphene Walls . . . . 858 Microwave  ...  and Two Reflection Bands . . . . . . . . . . . . . . . . . . . 1611 Simulation Studying for a THz Modulator with Resonance Cavity Coupled to Graphene-loaded Metal Wire Grating . . . . . . . . . . .  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/piers-fall48861.2019.9021769">doi:10.1109/piers-fall48861.2019.9021769</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/tkvlcifbifgolbr3u3kt5j3jra">fatcat:tkvlcifbifgolbr3u3kt5j3jra</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20201108053829/https://ieeexplore.ieee.org/ielx7/9006768/9021281/09021769.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/60/88/60883ab25ac3ff52040784b97f9136644af8fc2a.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/piers-fall48861.2019.9021769"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

ICMMT 2020 Table of Contents

<span title="2020-09-20">2020</span> <i title="IEEE"> 2020 International Conference on Microwave and Millimeter Wave Technology (ICMMT) </i> &nbsp;
Lin, Gang Lin, Tangshen Chen (Nanjing Electronic Devices Institute) P.5 Design of a 500W solid-state transmitter in X-band Nan Huang, Jingdong Wang, Ximing Jin (Xi'an Research Institute of Navigation  ...  ) P.58 Miniaturized dual-band waveguide band-pass filter Xiang Zhu, Falin Liu (University of Science and Technology of China) P.59 Design of A Microstrip Bandpass Filter With High Selectivity and Wide  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/icmmt49418.2020.9386465">doi:10.1109/icmmt49418.2020.9386465</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/5xm3fcufijafpdc2bxcnrbrjfm">fatcat:5xm3fcufijafpdc2bxcnrbrjfm</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20210401110135/https://ieeexplore.ieee.org/ielx7/9386274/9386330/09386465.pdf?tp=&amp;arnumber=9386465&amp;isnumber=9386330&amp;ref=" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/7f/9c/7f9c775a1d84927bb9e953300c4992459766ac67.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/icmmt49418.2020.9386465"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

Graphene FET on diamond for high-frequency electronics [article]

Muhammad Asad, Saman Majdi, Andrei Vorobiev, Kjell Jeppson, Jan Isberg, Jan Stake
<span title="2021-06-20">2021</span> <i > arXiv </i> &nbsp; <span class="release-stage" >pre-print</span>
Here, we report a graphene field-effect transistor (FET) on a diamond substrate, with a f_max up to 54 GHz for a gate length of 500 nm.  ...  However, the progress of high-speed graphene transistors has been hampered due to fabrication issues, influence of adjacent materials, and self-heating effects.  ...  .; Song, X.; Xu, P.; Han, T.; Li, J.; Feng, Z.; Cai, S. Graphene amplifier MMIC on SiC substrate. IEEE Electron Device Lett. 2016, 37, 684-687, doi:10.1109/LED.2016.2544938.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener" href="https://arxiv.org/abs/2106.09412v2">arXiv:2106.09412v2</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/6p7gxm7rwbbi7ed5xavcxtzaia">fatcat:6p7gxm7rwbbi7ed5xavcxtzaia</a> </span>
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Conference Programme

<span title="2021-01-10">2021</span> <i title="IEEE"> 2020 17th European Radar Conference (EuRAD) </i> &nbsp;
The purpose is to recognise and provide financial assistance to international Ph.D. students who show promise and interest in pursuing a graduate degree in microwave electronics.  ...  The GAAS® Association sponsors three student fellowships of €2,000 each, to be given to young full-time Ph.D. students each having an accepted paper at EuMIC 2020.  ...  The aim of the workshop is to provide a general overview of solid-state power amplifiers (SSPAs) and travelling wave tube amplifiers (TWTAs), their architecture, component technologies, and use in space  ... 
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Program Book

<span title="2021-06-07">2021</span> <i title="IEEE"> 2021 IEEE MTT-S International Microwave Symposium (IMS) </i> &nbsp;
of existing transistor technologies, 3D integrated systems and novel nanoelectronic devices employing unique low-temperature effects With these new devices, new ultra-low noise, ultra-low power, and wide-band  ...  is a need for cryogenic electronics with a large array of functionalities, operating under extremely low noise conditions with limited power budgets Achieving this will require enhanced understanding  ...  V-Band MMIC Square-Law Power Detector with 70dB Dynamic Range Exploiting State-of-the-Art Graphene Diodes Authors: M Saeed, RWTH Aachen Univ ; A Hamed, RWTH Aachen Univ ; B Uzlu, AMO; E Baskent, AMO;  ... 
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2018 Index IEEE Transactions on Circuits and Systems I: Regular Papers Vol. 65

<span title="">2018</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/l6r6h4xpzvh6jkuzrx565pgwgu" style="color: black;">IEEE Transactions on Circuits and Systems Part 1: Regular Papers</a> </i> &nbsp;
., and Pandey, N  ...  ., +, TCSI July 2018 2139-2150 Bipolar MMIC A K-/Ka-Band Concurrent Dual-Band Single-Ended Input to Differential Output Low-Noise Amplifier Employing a Novel Transformer Feedback Dual-Band Load.  ...  Jiang, X., +, TCSI March 2018 1143-1153 Power and Conjugately Matched High Band UWB Power Amplifier.  ... 
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