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Demonstration of a SiGe RF LNA design using IBM design kits in 0.18 μm SiGe BiCMOS technology

Yiming Chen, Xiaojuen Yuan, D. Scagnelli, J. Mecke, J. Gross, D. Harame
Proceedings. Design, Automation and Test in Europe Conference and Exhibition  

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A 1.5GHz-2.0GHz Low Noise Amplifier (LNA) is designed in IBM 0.18um BiCMOS technology using IBM design kits in Cadence Design Flow. The fabricated LNA chip is packaged and tested.  ...  The results demonstrate that IBM SiGe technology, Modeling, Design Kits and the Cadence design flow are solid and accurate for RFIC design.  ...  R Ccoeff vs Ccoeff Conclusion This work demonstrates a cascode low voltage low noise LNA design with the device selection method with IBM 0.18um BiCMOS technology.  ... 
doi:10.1109/date.2004.1269193 dblp:conf/date/ChenYSMGH04 fatcat:i7abv5ntijf2tinxp6rbecvdb4
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Yiming Chen, Xiaojuen Yuan, D. Scagnelli, J. Mecke, J. Gross, D. Harame. "Demonstration of a SiGe RF LNA design using IBM design kits in 0.18 μm SiGe BiCMOS technology." Proceedings. Design, Automation and Test in Europe Conference and Exhibition 22-27