Filters








2 Hits in 3.8 sec

DRV-Fingerprinting: Using Data Retention Voltage of SRAM Cells for Chip Identification [chapter]

Daniel E. Holcomb, Amir Rahmati, Mastooreh Salajegheh, Wayne P. Burleson, Kevin Fu
2013 Lecture Notes in Computer Science  
Our method of fingerprinting SRAM cells by their data retention voltage improves the success rate of identification by 28% over fingerprints based on power-up state.  ...  We propose a new variant of PUF that uses well-understood properties of common memory cells as a fingerprint.  ...  Any opinions, findings, and conclusions or recommendations expressed in these materials are those of the authors and do not necessarily reflect the views of the sponsors.  ... 
doi:10.1007/978-3-642-36140-1_12 fatcat:caaandlfcbdmvaw37xlmsdghii

Reliable Physical Unclonable Functions Using Data Retention Voltage of SRAM Cells

Xiaolin Xu, Amir Rahmati, Daniel E. Holcomb, Kevin Fu, Wayne Burleson
2015 IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  
The PUF studied in this paper utilizes the variation sensitivity of static random access memory (SRAM) data retention voltage (DRV), the minimum voltage at which each cell can retain state.  ...  Index Terms-Chip identification, data retention voltage (DRV), key generation, machine learning (ML), physical unclonable function (PUF).  ...  ACKNOWLEDGMENT Any opinions, findings, conclusions, and recommendations expressed in these materials are those of the authors and do not necessarily reflect the views of the sponsors.  ... 
doi:10.1109/tcad.2015.2418288 fatcat:3zttfyfrzbesrnfhlwd6tv2dyy