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Compact model for flexible ion-sensitive field-effect transistor
2017
2017 IEEE Biomedical Circuits and Systems Conference (BioCAS)
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This paper presents the theoretical modelling, and simulation of bending effects on an ion-sensitive field-effect transistor (ISFET), towards futuristic bendable integrated circuits and microsystems for ...
The effects of bending on the behaviour of the device have been simulated over a user-defined range of pH, and sensitivities in a standard 0.18-μm CMOS technology. ...
One of the numerous examples towards this direction is the invention of the Ion Sensitive Field-Effect Transistor (ISFET) in 1970 [1] . ...
doi:10.1109/biocas.2017.8325217
dblp:conf/biocas/VilourasD17
fatcat:k4nb5znnafbr3eq4beibdrbi4m
Author Index
2021
2021 IEEE Latin America Electron Devices Conference (LAEDC)
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Flexible Electrode Capacitive Sensors System for Human Fluid
Detection
Römer, Christian
Uniform DC Compact Model for Schottky Barrier and Reconfigurable
Field-Effect Transistors
S
Sacramento, ...
Field-Effect Transistors Vanbrabant, Martin Assessment of RF compact modelling of FD SOI transistors Veloso, Anabela Analysis of the ZTC-Point for Vertically Stacked Nanosheet pMOS Devices Weber, Walter ...
doi:10.1109/laedc51812.2021.9437919
fatcat:4ex6llekvnc2fhj46j4j2yjkbq
Technical Program
2021
2021 IEEE Latin America Electron Devices Conference (LAEDC)
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effect transistor (fet)
Field Effect Transistor Evolution: From MOSFET to BioFET
Field emission
Uniform DC Compact Model for Schottky Barrier and
Reconfigurable Field-Effect Transistors
Fitting ...
and MEMS technologies
Compact modeling
Uniform DC Compact Model for Schottky Barrier and
Reconfigurable Field-Effect Transistors
Compact modeling
An Introduction to Memristor Compact Modelling using ...
doi:10.1109/laedc51812.2021.9437946
fatcat:7j6djeusvzg2jiiem7qibbqsg4
Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch
2007
IEEE Transactions on Nuclear Science
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Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event ...
Monte Carlo simulation is used to model the response and predict an on-orbit error rate. ...
Both transistors comprising the SEU-sensitive pair were simulated in three dimensions, while the rest of the latch (minus access transistors) was modeled with compact circuit models. ...
doi:10.1109/tns.2007.907678
fatcat:pvcdpbovuzdbhmcqu743f237gq
Table of contents
2021
IEEE Electron Device Letters
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Chang 3838 Thin Film Transistors Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . ...
David 4045 Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
doi:10.1109/led.2021.3095772
fatcat:4a34z7fbvrfx5humh364j3ueji
Recent Advances in Electric-Double-Layer Transistors for Bio-Chemical Sensing Applications
2019
Sensors
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As promising biochemical sensors, ion-sensitive field-effect transistors (ISFETs) are used widely in the growing field of biochemical sensing applications. ...
Recently, a new type of field-effect transistor gated by ionic electrolytes has attracted intense attention due to the extremely strong electric-double-layer (EDL) gating effect. ...
As a kind of potentiometric sensor, ion-sensitive field-effect transistors (ISFETs) are used widely in the growing field of biochemical sensing applications due to their advantages of label-free detection ...
doi:10.3390/s19153425
pmid:31387221
pmcid:PMC6696065
fatcat:l4ru5i7hrfcf7gfraryoceyj4m
Table of contents
2021
IEEE Transactions on Electron Devices
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Chang 3838 Thin Film Transistors Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . ...
David 4045 Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
doi:10.1109/ted.2021.3095735
fatcat:y4rvgvsnl5gfbdyrwjrqzf6owe
A Static Model for Electrolyte-Gated Organic Field-Effect Transistors
2011
IEEE Transactions on Electron Devices
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Abstract-We present a DC model to simulate the static performance of electrolyte-gated organic field effect transistors. ...
Index Terms-static model, electric double layer capacitance, field effect transistors, parameter extraction, polymer electrolyte ...
The model is also applicable for conventional organic field effect transistors with insulating gate dielectrics. ...
doi:10.1109/ted.2011.2162648
fatcat:wxrnu3vaxjbijonf2pzywixjuu
2020 Index IEEE Electron Device Letters Vol. 41
2020
IEEE Electron Device Letters
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Qu, H., +, LED July 2020 1029-1032 Compact Model for Geometry Dependent Mobility in Nanosheet FETs. ...
Huo, Q., +, LED March 2020
497-500
Effective mass
Compact Model for Geometry Dependent Mobility in Nanosheet FETs.
Dasgupta, A., +, LED March 2020 313-316
High Pressure Annealing. ...
High-pressure effects Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction. Hwang, J., +, LED 1193 -1196 ...
doi:10.1109/led.2021.3052397
fatcat:3hcysdtecve2zhapvka44rw7z4
Electrolyte-Gated Field Effect Transistors in Biological Sensing: A Survey of Electrolytes
2021
IEEE Journal of the Electron Devices Society
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Low operating voltages, rapid response, and high-throughput fabrication compatibility are key advantages for the development of electrolyte-gated field effect transistors (EGFETs) for biological sensing ...
The challenges and opportunities for electrolytes in EGFETs are discussed for future research directions in this field. ...
INTRODUCTION Electrolyte materials and electrolyte-gated field effect transistors (EGFETs) have gained attention for their printability, flexibility, and potential for large-scale manufacturing as well ...
doi:10.1109/jeds.2021.3082420
fatcat:r3e3klq3fzeuradqvdsiyjdtlq
2018 Index IEEE Sensors Letters Vol. 2
2018
IEEE Sensors Letters
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The Author Index contains the primary entry for each item, listed under the first author's name. ...
., +, LSENS Sept. 2018 2500904 Field effect transistors All-Additive Solution Processed Silver/Silver Chloride Reference Electrode for Handheld Ion-Sensitive Field-Effect Transistor Sensing System. ...
., +, LSENS June 2018 2000303 Subthreshold-Operated Low-Voltage Organic Field-Effect Transistor for Ion-Sensing System of High Transduction Sensitivity. ...
doi:10.1109/lsens.2019.2891872
fatcat:pxwes6jpjrhurjjdutlff7w3ei
2020 Index IEEE Journal of the Electron Devices Society Vol. 8
2020
IEEE Journal of the Electron Devices Society
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., +, JEDS 2020 917-924
Flexible electronics
Advances in Compact Modeling of Organic Field-Effect Transistors. ...
Menon, P.S., +, JEDS 2020 1227-1235 Organic field effect transistors Advances in Compact Modeling of Organic Field-Effect Transistors. ...
Resistors Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit. Wu, J., +, JEDS 2020 ...
doi:10.1109/jeds.2021.3055467
fatcat:yhpqbxl4nffg7mg2cwuskvuuo4
2020 Index IEEE Transactions on Electron Devices Vol. 67
2020
IEEE Transactions on Electron Devices
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Improved Performance of Stacked Nanosheet Field-Effect Transistor; TED Oct. 2020 4079-4084 Jelonnek, J., see Shcherbinin, V.I., 2933-2939 Jelonnek, J., see Ioannidis, Z.C., TED Dec. 2020 5783-5789 ...
., Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling; 5349-5354 Gupta, A., see Gupta, C., TED May 2020 2208-2212 Gupta, C., Dey, S., Goel, R., Hu, C., and Chauhan, Y.S., Modeling ...
Field-Effect Transistors. ...
doi:10.1109/ted.2021.3054448
fatcat:r4ertn5jordkfjjvorvss7n6ju
Ultra-Thin Chips with ISFET Array for Continuous Monitoring of Body Fluids pH
2022
IEEE Transactions on Biomedical Circuits and Systems
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The design of presented ISFET device is analysed with finite element modeling in COMSOL Multiphysics using compact model parameters of MOSFET in 350 nm CMOS technology. ...
The silicon area occupancy of each active-pixel is 44.9x33.5 m2 with an ion-sensing area of 576 m2. ...
Whilst printed passive ISEs offer an attractive route for electrochemical measurements, the ion-sensitive field-effect transistors (ISFETs) could be a better alternative, owing to their complementary metal-oxide-semiconductor ...
doi:10.1109/tbcas.2022.3141553
pmid:35007198
fatcat:nber5vn3obeo5ks3ru75al4t3y
FET-Based Integrated Charge Sensor for Organ-on-Chip Applications
2020
2020 IEEE Sensors
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FET-based integrated charge sensor for organ-on-chip applications Aydogmus, H.; Dostanic, M.; Jahangiri, M.; Sinha, Rajarshi; Quiros Solano, W.F.; Mastrangeli, M.; Sarro, P.M. ...
Abstract-We present an extremely compact field effect transistor (FET)-based electrochemical sensor for in situ real-time and label-free measurement of ion concentrations in the cell culture area of organs-on-chip ...
To provide compact sensing solutions in OoCs, we propose to use field effect transistor (FET)-based electrochemical sensors. ...
doi:10.1109/sensors47125.2020.9278692
fatcat:r4g5wj3k5va2hlmgjw5ovoiifa
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