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Compact model for flexible ion-sensitive field-effect transistor

Anastasios Vilouras, Ravinder Dahiya
2017 2017 IEEE Biomedical Circuits and Systems Conference (BioCAS)  
This paper presents the theoretical modelling, and simulation of bending effects on an ion-sensitive field-effect transistor (ISFET), towards futuristic bendable integrated circuits and microsystems for  ...  The effects of bending on the behaviour of the device have been simulated over a user-defined range of pH, and sensitivities in a standard 0.18-μm CMOS technology.  ...  One of the numerous examples towards this direction is the invention of the Ion Sensitive Field-Effect Transistor (ISFET) in 1970 [1] .  ... 
doi:10.1109/biocas.2017.8325217 dblp:conf/biocas/VilourasD17 fatcat:k4nb5znnafbr3eq4beibdrbi4m

Author Index

2021 2021 IEEE Latin America Electron Devices Conference (LAEDC)  
Flexible Electrode Capacitive Sensors System for Human Fluid Detection Römer, Christian Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors S Sacramento,  ...  Field-Effect Transistors Vanbrabant, Martin Assessment of RF compact modelling of FD SOI transistors Veloso, Anabela Analysis of the ZTC-Point for Vertically Stacked Nanosheet pMOS Devices Weber, Walter  ... 
doi:10.1109/laedc51812.2021.9437919 fatcat:4ex6llekvnc2fhj46j4j2yjkbq

Technical Program

2021 2021 IEEE Latin America Electron Devices Conference (LAEDC)  
effect transistor (fet) Field Effect Transistor Evolution: From MOSFET to BioFET Field emission Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors Fitting  ...  and MEMS technologies Compact modeling Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors Compact modeling An Introduction to Memristor Compact Modelling using  ... 
doi:10.1109/laedc51812.2021.9437946 fatcat:7j6djeusvzg2jiiem7qibbqsg4

Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch

Kevin M. Warren, Brian D. Sierawski, Robert A. Reed, Robert A. Weller, Carl Carmichael, Austin Lesea, Marcus H. Mendenhall, Paul E. Dodd, Ron D. Schrimpf, Lloyd W. Massengill, Tan Hoang, Hsing Wan (+3 others)
2007 IEEE Transactions on Nuclear Science  
Heavy ion cross section data taken from a hardened-by-design circuit are presented which deviate from the traditional single sensitive volume or classical rectangular parallelepiped model of single event  ...  Monte Carlo simulation is used to model the response and predict an on-orbit error rate.  ...  Both transistors comprising the SEU-sensitive pair were simulated in three dimensions, while the rest of the latch (minus access transistors) was modeled with compact circuit models.  ... 
doi:10.1109/tns.2007.907678 fatcat:pvcdpbovuzdbhmcqu743f237gq

Table of contents

2021 IEEE Electron Device Letters  
Chang 3838 Thin Film Transistors Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors . . . . . . . . . . . . . . . . . . . . . . . . . .  ...  David 4045 Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  ... 
doi:10.1109/led.2021.3095772 fatcat:4a34z7fbvrfx5humh364j3ueji

Recent Advances in Electric-Double-Layer Transistors for Bio-Chemical Sensing Applications

Ning Liu, Ru Chen, Qing Wan
2019 Sensors  
As promising biochemical sensors, ion-sensitive field-effect transistors (ISFETs) are used widely in the growing field of biochemical sensing applications.  ...  Recently, a new type of field-effect transistor gated by ionic electrolytes has attracted intense attention due to the extremely strong electric-double-layer (EDL) gating effect.  ...  As a kind of potentiometric sensor, ion-sensitive field-effect transistors (ISFETs) are used widely in the growing field of biochemical sensing applications due to their advantages of label-free detection  ... 
doi:10.3390/s19153425 pmid:31387221 pmcid:PMC6696065 fatcat:l4ru5i7hrfcf7gfraryoceyj4m

Table of contents

2021 IEEE Transactions on Electron Devices  
Chang 3838 Thin Film Transistors Compact Modeling of Nonlinear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors . . . . . . . . . . . . . . . . . . . . . . . . . .  ...  David 4045 Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  ... 
doi:10.1109/ted.2021.3095735 fatcat:y4rvgvsnl5gfbdyrwjrqzf6owe

A Static Model for Electrolyte-Gated Organic Field-Effect Transistors

Deyu Tu, Lars Herlogsson, Loïg Kergoat, Xavier Crispin, Magnus Berggren, Robert Forchheimer
2011 IEEE Transactions on Electron Devices  
 Abstract-We present a DC model to simulate the static performance of electrolyte-gated organic field effect transistors.  ...  Index Terms-static model, electric double layer capacitance, field effect transistors, parameter extraction, polymer electrolyte  ...  The model is also applicable for conventional organic field effect transistors with insulating gate dielectrics.  ... 
doi:10.1109/ted.2011.2162648 fatcat:wxrnu3vaxjbijonf2pzywixjuu

2020 Index IEEE Electron Device Letters Vol. 41

2020 IEEE Electron Device Letters  
Qu, H., +, LED July 2020 1029-1032 Compact Model for Geometry Dependent Mobility in Nanosheet FETs.  ...  Huo, Q., +, LED March 2020 497-500 Effective mass Compact Model for Geometry Dependent Mobility in Nanosheet FETs. Dasgupta, A., +, LED March 2020 313-316 High Pressure Annealing.  ...  High-pressure effects Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction. Hwang, J., +, LED 1193 -1196  ... 
doi:10.1109/led.2021.3052397 fatcat:3hcysdtecve2zhapvka44rw7z4

Electrolyte-Gated Field Effect Transistors in Biological Sensing: A Survey of Electrolytes

Guan Ying Wang, Keryn Lian, Ta-Ya Chu
2021 IEEE Journal of the Electron Devices Society  
Low operating voltages, rapid response, and high-throughput fabrication compatibility are key advantages for the development of electrolyte-gated field effect transistors (EGFETs) for biological sensing  ...  The challenges and opportunities for electrolytes in EGFETs are discussed for future research directions in this field.  ...  INTRODUCTION Electrolyte materials and electrolyte-gated field effect transistors (EGFETs) have gained attention for their printability, flexibility, and potential for large-scale manufacturing as well  ... 
doi:10.1109/jeds.2021.3082420 fatcat:r3e3klq3fzeuradqvdsiyjdtlq

2018 Index IEEE Sensors Letters Vol. 2

2018 IEEE Sensors Letters  
The Author Index contains the primary entry for each item, listed under the first author's name.  ...  ., +, LSENS Sept. 2018 2500904 Field effect transistors All-Additive Solution Processed Silver/Silver Chloride Reference Electrode for Handheld Ion-Sensitive Field-Effect Transistor Sensing System.  ...  ., +, LSENS June 2018 2000303 Subthreshold-Operated Low-Voltage Organic Field-Effect Transistor for Ion-Sensing System of High Transduction Sensitivity.  ... 
doi:10.1109/lsens.2019.2891872 fatcat:pxwes6jpjrhurjjdutlff7w3ei

2020 Index IEEE Journal of the Electron Devices Society Vol. 8

2020 IEEE Journal of the Electron Devices Society  
., +, JEDS 2020 917-924 Flexible electronics Advances in Compact Modeling of Organic Field-Effect Transistors.  ...  Menon, P.S., +, JEDS 2020 1227-1235 Organic field effect transistors Advances in Compact Modeling of Organic Field-Effect Transistors.  ...  Resistors Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit. Wu, J., +, JEDS 2020  ... 
doi:10.1109/jeds.2021.3055467 fatcat:yhpqbxl4nffg7mg2cwuskvuuo4

2020 Index IEEE Transactions on Electron Devices Vol. 67

2020 IEEE Transactions on Electron Devices  
Improved Performance of Stacked Nanosheet Field-Effect Transistor; TED Oct. 2020 4079-4084 Jelonnek, J., see Shcherbinin, V.I., 2933-2939 Jelonnek, J., see Ioannidis, Z.C., TED Dec. 2020 5783-5789  ...  ., Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling; 5349-5354 Gupta, A., see Gupta, C., TED May 2020 2208-2212 Gupta, C., Dey, S., Goel, R., Hu, C., and Chauhan, Y.S., Modeling  ...  Field-Effect Transistors.  ... 
doi:10.1109/ted.2021.3054448 fatcat:r4ertn5jordkfjjvorvss7n6ju

Ultra-Thin Chips with ISFET Array for Continuous Monitoring of Body Fluids pH

Mahdieh Shojaei Baghini, Anastasios Vilouras, Ravinder Dahiya
2022 IEEE Transactions on Biomedical Circuits and Systems  
The design of presented ISFET device is analysed with finite element modeling in COMSOL Multiphysics using compact model parameters of MOSFET in 350 nm CMOS technology.  ...  The silicon area occupancy of each active-pixel is 44.9x33.5 m2 with an ion-sensing area of 576 m2.  ...  Whilst printed passive ISEs offer an attractive route for electrochemical measurements, the ion-sensitive field-effect transistors (ISFETs) could be a better alternative, owing to their complementary metal-oxide-semiconductor  ... 
doi:10.1109/tbcas.2022.3141553 pmid:35007198 fatcat:nber5vn3obeo5ks3ru75al4t3y

FET-Based Integrated Charge Sensor for Organ-on-Chip Applications

Hande Aydogmus, Milica Dostanic, Mojtaba Jahangiri, Rajarshi Sinha, William Fausto Quiros-Solano, Massimo Mastrangeli, Pasqualina Maria Sarro
2020 2020 IEEE Sensors  
FET-based integrated charge sensor for organ-on-chip applications Aydogmus, H.; Dostanic, M.; Jahangiri, M.; Sinha, Rajarshi; Quiros Solano, W.F.; Mastrangeli, M.; Sarro, P.M.  ...  Abstract-We present an extremely compact field effect transistor (FET)-based electrochemical sensor for in situ real-time and label-free measurement of ion concentrations in the cell culture area of organs-on-chip  ...  To provide compact sensing solutions in OoCs, we propose to use field effect transistor (FET)-based electrochemical sensors.  ... 
doi:10.1109/sensors47125.2020.9278692 fatcat:r4g5wj3k5va2hlmgjw5ovoiifa
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