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Effect of Impact-Ionization-Generated Holes on the Breakdown Mechanism in LDMOS Devices

T. Sakuda, N. Sadachika, Y. Oritsuki, M. Yokomichi, M. Miyake, T. Kajiwara, H. Kikuchihara, U. Feldmann, H. J. Mattausch, M. Miura-Mattausch
2009 2009 International Conference on Simulation of Semiconductor Processes and Devices  
This mechanism is modeled and implemented into the compact model HiSIM_HV for circuit simulation. Good agreement of simulated characteristics with 2Ddevice simulation results has been achieved.  ...  The breakdown mechanism in LDMOS devices with high resistive drift region sustaining high-voltage applications is analyzed and explained.  ...  Yong Liu (Texas Instruments) for valuable discussion on expansion effect.  ... 
doi:10.1109/sispad.2009.5290211 fatcat:p7pmfdfibnhmteohxwsikeslj4

MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation

N.V.T. D'Halleweyn, J. Benson, W. Redman-White, K. Mistry, M. Swanenberg
2004 IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  
Self (and coupled) heating effects exert a major influence over the behavior of power SOI devices, and these issues are incorporated in the model core in a consistent fashion.The model has been installed  ...  In this paper, we present a compact model for silicon-on-insulator (SOI) laterally double diffused (LD) MOSFETs.  ...  Compact models for SOI LDMOS transistors have received much attention in the literature [6] - [10] .  ... 
doi:10.1109/tcad.2004.835125 fatcat:5fbinayx6fcwhosfedawionm6m

Parameter Extraction for the PSPHV LDMOS Transistor Model

Kejun Xia, Colin C. McAndrew, Ronald van Langevelde
2020 IEEE Journal of the Electron Devices Society  
expansion effect.  ...  This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating.  ...  Finally, check the slope of I d expansion just above the onset of the expansion effect. If the slope in the modeled I d is too small, first reduce beta and re-optimize.  ... 
doi:10.1109/jeds.2020.3011635 fatcat:epmsuvnzvfdnvischv6js3wngq

Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback, and Self-Heating

Ujwal Radhakrishna, Amitava DasGupta, Nandita DasGupta, Anjan Chakravorty
2011 IEEE Transactions on Electron Devices  
EKV model is an example of such a compact model for LDMOS devices [16][17][18].  ...  There have been many efforts in modeling SOI-LDMOS especially in low drain voltage regime. The two main approaches used are (i) macro-modeling and (ii) compact modeling.  ... 
doi:10.1109/ted.2011.2165724 fatcat:ejso5cesijexxcqb7rclnobkmq

Localized Rapid Heating by Low-Power Solid-State Microwave Drill

Yehuda Meir, Eli Jerby
2012 IEEE transactions on microwave theory and techniques  
The experimental results verify the rapid heating effect, similarly to the theoretical model.  ...  The experimental device employs an LDMOS transistor in an oscillator scheme, feeding a miniature microwave-drill applicator.  ...  THEORETICAL MODEL The theoretical model [3] is presented briefly for the sake of self-consistency in order to validate the feasibility of the new 10-100-W microwave-drill regime (note that the model  ... 
doi:10.1109/tmtt.2012.2198233 fatcat:kncsetkrkffincoda32jeth5j4

Evolution of Black-Box Models Based on Volterra Series

Daniel D. Silveira, Thiago V. N. Coelho, Alexandre Bessa dos Santos
2015 Journal of Applied Mathematics  
New trends in RF power amplifier behavioral modeling are suggested.  ...  This paper presents a historical review of the many behavioral models actually used to model radio frequency power amplifiers and a new classification of these behavioral models.  ...  Acknowledgments This work was supported by the PPEE-UFJF, http://www, Federal University of Juiz de Fora, http://www, Programa de Apoioà Publicação/Pró-reitoria de Pesquisa/Universidade  ... 
doi:10.1155/2015/638978 fatcat:nr277gewsnexbakems4fskszrm

Papers by Title

2019 2019 IEEE International Conference on Consumer Electronics - Taiwan (ICCE-TW)  
by Agent-Oriented Petri Net PN2 Modeling of Energy Consumption for Zigbee Nodes with IEEE 802.15.4 TSCH MAC Modeling of Time Series for S-band Spectrum Use in Satellite Downlink Multi-agent crowdsourcing  ...  a Construction Tool for the Web-based Diagnostic Multimedia Test Developing Cause-Effect Relational Evaluation Model to Approach Alarm Management System Development and Implementation of Solar-Assisted  ... 
doi:10.1109/icce-tw46550.2019.8991721 fatcat:62376ymadzge3g5xomicr5tesq

Broadband Fully Integrated GaN Power Amplifier With Minimum-Inductance BPF Matching and Two-Transistor AM-PM Compensation

G. Reza Nikandish, Robert Bogdan Staszewski, Anding Zhu
2020 IEEE Transactions on Circuits and Systems Part 1: Regular Papers  
useful in making a compact system with lower cost.  ...  feature is useful in lowloss and compact chip area implementation.  ... 
doi:10.1109/tcsi.2020.3002395 fatcat:wjzuj5hgs5ea3dein3fmfyi6tu

Compact modeling of high voltage MOSFETs

Yogesh Singh Chauhan
The increased difficulty is related to complex 2D effects specific to asymmetric high voltage device architectures. This thesis presents the compact modeling of high voltage devices.  ...  The limitation of these models lies in their lack of capability to physically model some of the characteristic phenomena observed in high voltage devices.  ...  Noise Modeling in the Lateral Non-uniformly doped MOS-FET As the efforts for a compact LDMOS model [16, 17, 18, 19] for standardization is going on by the Compact Model Council (CMC) [20] , the noise  ... 
doi:10.5075/epfl-thesis-3915 fatcat:2pkfq4iuybgl5pmjj4q2vuxj2a

Active mode locking of quantum cascade lasers in an external ring cavity

D. G. Revin, M. Hemingway, Y. Wang, J. W. Cockburn, A. Belyanin
2016 Nature Communications  
While compact mode-locked lasers emitting in the visible and near infrared range have revolutionized photonic technologies, the systems operating in the mid-infrared range where most gases have their strong  ...  The laser operates in the mode-locked regime at room temperature and over the full dynamic range of injection currents of a standard commercial laser chip.  ...  In this case SHB has a detrimental effect, similarly to AML in monolithic QCLs.  ... 
doi:10.1038/ncomms11440 pmid:27147409 pmcid:PMC4858733 fatcat:kihslycejzhnzpolfpxhztvsca

Light Sources and Lighting Circuits

Takeo YASUDA, Tomohiko HAYAKASHI, Shouji NAOKI, Akiko SAITO, Akiyoshi MAEHARA, Atsunori OKADA, Hideo OTANI, Junichi HASAGAWA
2011 Journal of light & visual environment  
According to machinery statistics of the Ministry of Economy, Trade and Industry, the quantity of electric lamps produced in Japan in 2010 was 797,000,000 (129.5% compared to the previous year).  ...  Only backlights show a significant reduction of more than 30% for 2 years in succession, due in large part to a switch to LED lighting. Our main exhibitions included "LED Next Stage  ...  In 2010, the world's largest "Light & Building" exhibition was held in Frankfurt, Germany in which observation reports were given with a main focus on the expansion of "energy-saving" products 83) ,  ... 
doi:10.2150/jlve.35.142 fatcat:52xviraovbhxzislkmacukywdm

Electrical characterization and modelling of lateral DMOS transistor:investigation of capacitances and hot-carrier impact

Nasser Hefyene
A widely known LDMOS empirical model is Motorola's thermal model (MET) tailored for RF applications. The merit of this model is to include thermal effects in basic equations.  ...  Models based on various levels of SPICE: Mixtures of MOSFET SPICE models complemented by JFETs and diodes have been used in order to model and simulate the LDMOS behaviour.  ...  APPENDIX List of Publications  ... 
doi:10.5075/epfl-thesis-3200 fatcat:whdpmiadwndd7jkwvgibz2zqkm

Review and Prospects of RF Solid State Amplifiers for Particle Accelerators

Patrick Marchand, Schaa, Volker RW (Ed.), Arduini, Gianluigi (Ed.), Pranke, Juliana (Ed.), Seidel, Mike (Ed.), Lindroos, Mats (Ed.)
In this paper we report about the SOLEIL experience with SSPAs and review the used or planned SSPAs in other accelerator facilities.  ...  Thanks to the growth of high power semiconductor technology, solid state power amplifier (SSPA) systems with several hundred kW RF power are now available for various accelerator fields.  ...  He was the pioneer in the domain of RF SSPA, which would not have had such a fast expansion and success without his precursor work. Ti Ruan 1936 -2014  ... 
doi:10.18429/jacow-ipac2017-wezb1 fatcat:vqy7y3pzuzewnlr56ddeuhmixy

A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications

Maryam Sajedin, I.T.E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, Monica Fernandez Barciela
2019 Electronics  
Moreover, advance design architectures for enhancing the Doherty power amplifier's performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques  ...  of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.  ...  Conflicts of Interest: The authors declare no conflict of interest.  ... 
doi:10.3390/electronics8060717 fatcat:skxagruudvfsjksl37em3oowja

Microwave Class-E Power Amplifiers: A Brief Review of Essential Concepts in High-Frequency Class-E PAs and Related Circuits

Zoya Popovic, Jose A. Garcia
2018 IEEE Microwave Magazine  
COUT can be de-embedded from a nonlinear model or measured large-signal parameters and used as a part of the output matching circuit.  ...  The class-E mode of operation is defined by the time-domain waveforms for a 50% duty cycle and assuming soft switching (both voltage and the derivative of  ...  The output power could not be well predicted due to the inadequacy of non-linear models in 1995.  ... 
doi:10.1109/mmm.2018.2822202 fatcat:uvk3imdkbfcr5kqelhvubvhdva
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