22,130 Hits in 2.9 sec

Impact of package parasitics on crosstalk in mixed-signal ICs

Giorgio Boselli, Vincenzo Ferragina, Nicola Ghittori, Valentino Liberali, Guido Torelli, Gabriella Trucco, Jose F. Lopez, Francisco V. Fernandez, Jose Maria Lopez-Villegas, Jose M. de la Rosa
2005 VLSI Circuits and Systems II  
A realistic model of bonding and package parasitics has been derived to study digital switching noise injected through bonding interconnections.  ...  Test structures have been integrated into a test chip mounted with different technologies, in order to compare the measurements on test chips. Measurements confirm simulation results.  ...  Figure 2 . 2 Section view of NMOS and PMOS devices in the used technology. Fig. 4 4 shows the analog structures used for noise collection.  ... 
doi:10.1117/12.608638 fatcat:l5ks5u5ihbf4lp2jef6mem3uz4

Circuit Performance Degradation of Sample-and-Hold Amplifier Due to Gate-Oxide Overstress in a 130-nm CMOS Process

Jung-sheng Chen, Ming-dou Ker
2006 2006 IEEE International Reliability Physics Symposium Proceedings  
The effect of gate-oxide reliability on MOS switch in the bootstrapped circuit is investigated with the sample-and-hold amplifier in a 130-nm CMOS process.  ...  After overstress on the MOS switch of sample-and-hold amplifier, the circuit performances in the frequency domain are measured to verify the impact of gate-oxide reliability on circuit performance.  ...  In Fig. 2 , the operational amplifier with the folded-cascode structure is used to realize the buffer. The sampling capacitance C S is realized by a PMOS transistor.  ... 
doi:10.1109/relphy.2006.251334 fatcat:auoqrrcdhbgalph3dbk7jzva6e

Trial of Fabrication of Multiple-Tone Magneto-Optical Spatial Light Modulator for Analog Data Processing

A. Tsuzuki, H. Takagi, P. B. Lim, H. Uchida, K. H. Shin, M. Inoue
2006 Journal of the Magnetics Society of Japan  
A magneto optic spatial light modulator (MO-SLM) for multiple-tone expression was fabricated by using in-plane magnetization of garnet film.  ...  Changing a driving current from 0 to 28 mA, we were able to change brightness of pixels in the line.  ...  Acknowledgements The work was supported in part by the Super Optical Information Memory Project by MEXT and NEDO Development of Strategic Technologies of the Next Generation for Their Practical Uses.  ... 
doi:10.3379/jmsjmag.30.571 fatcat:jecwhifbsrg7bkrmxtfsbkzpza

VI-3 effective recombination velocity at a buried layer to epitaxial interface

R.S. Muller
1975 IEEE Transactions on Electron Devices  
Alternatively, a connection can be nmde to a ground plane, shorting the device, and thereby turning off a switch.  ...  The influence of diffused elements on the MOS capacitor structure, and hence on MOSFETs, has been investigated using the capacitance-voltage (C-V) and conductance voltage ( G V ) characteristics of MOS  ...  Alternatively, a connection can be nmde to a ground plane, shorting the device, and thereby turning off a switch.  ... 
doi:10.1109/t-ed.1975.18322 fatcat:i2bkuv7avvexzmd3en436bsu74

Inactivity Windows in Irradiated CMOS Analog Switches

F.J. Franco, Y. Zong, J.A. Agapito
2006 IEEE Transactions on Nuclear Science  
AbstractRadiation tests have shown the existence of inactivity windows in analog switches.  ...  It means that the devices lose their ability to switch between ON and OFF states if the total radiation dose is placed between two characteristic values.  ...  A P-channel MOSFET is used as a pull-up load device for an N-channel MOSFET pull-down device.  ... 
doi:10.1109/tns.2006.880474 fatcat:zxuhj26zrrgfdel7nleaikug4e

Advanced Materials and Device Architectures for Magnetooptical Spatial Light Modulators

Soheila Kharratian, Hakan Urey, Mehmet C. Onbaşlı
2019 Advanced Optical Materials  
Faraday and Kerr rotations are magnetooptical (MO) effects used for rotating the polarization of light in transmission and reflection from a magnetized medium, respectively.  ...  The challenges with MOSLM functionalities including the intrinsic weakness of MO effect and large power requirement for switching are assessed.  ...  In order to use such a structure for MO modulation of light, the free layer needs to have MO properties.  ... 
doi:10.1002/adom.201901381 fatcat:rmnezrihwjhd5g6m24stexlcmq

Practical Approach to Induce Analog Switching Behavior in Memristive Devices: Digital-to-Analog Transformation [chapter]

Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Debashis Panda, Aftab Salem, Themis Prodromakis
2021 Memristors [Working Title]  
the device to achieved analog switching.  ...  devices.  ...  Device structure Switching characteristics Synaptic behavior Note References Analog/ digital On/off ratio Linearity Dynamic range (%) Pt/ZnO/TiN Analog <10 NA 33 Bipolar switching  ... 
doi:10.5772/intechopen.98607 fatcat:svg6jeqqbfcxvmqhuujchwjnfe

Monolithic 3D CMOS Using Layered Semiconductors

Angada B. Sachid, Mahmut Tosun, Sujay B. Desai, Ching-Yi Hsu, Der-Hsien Lien, Surabhi R. Madhvapathy, Yu-Ze Chen, Mark Hettick, Jeong Seuk Kang, Yuping Zeng, Jr-Hau He, Edward Yi Chang (+3 others)
2016 Advanced Materials  
Switching characteristics of static CMOS digital circuits using shared gate monolithic 3D CMOS architecture. a) Voltage transfer characteristics (V OUT vs V IN ) of inverter for supply voltage of 0.5-3  ...  V. b) Voltage gain (dV OUT /dV IN ) of inverter as a function of supply voltage.  ...  Device encapsulation using a suitable insulating oxide as followed in a state-of-the-art CMOS process will be required for commercial implementation of this structure.  ... 
doi:10.1002/adma.201505113 pmid:26833783 fatcat:xwyt5mzqe5cdrkr6kqeonidhgu

Overview of floating-gate devices, circuits, and systems

P. Hasler, T.S. Lande
2001 IEEE transactions on circuits and systems - 2, Analog and digital signal processing  
Dense structures are achieved using multiple control gates to a common floating gate. II.  ...  Since the floating-gate devices are full-blown MOS transistors, it is tempting to utilize them as analog circuit elements.  ...  sensor interfaces; the physics of deep submicrometer devices or floating-gate MOS devices; and analog VLSI models of neurobiological learning and sensory information processing.  ... 
doi:10.1109/tcsii.2001.913180 fatcat:dpn7lz5c4jfqnppnnrgarko634

Memristive Systems Based on Two-Dimensional Materials [chapter]

Gennady N. Panin, Olesya O. Kapitanova
2018 Advances in Memristor Neural Networks - Modeling and Applications  
The photocatalytic oxidation of graphene is proposed as an effective method of creating synapse-like 2D memristive devices with photoresistive switching for nonvolatile electronic memory of ultrahigh density  ...  exhibit multiple states controlled in a wide range of electromagnetic radiation and can be used for neuromorphic computations, pattern recognition and image processing needed to create artificial intelligence  ...  (a, b) Resistance spread of MoS 2 crossbar MIM devices for 150 manual dc switching cycles.  ... 
doi:10.5772/intechopen.78973 fatcat:lcebr65kzva2vazs4r5jaxhtvi

Design of Synchronous Rectifier Digital Power Supply Based on STM32

Xiu-hua WANG, Xin-fa MIAO
2016 DEStech Transactions on Environment Energy and Earth Science  
Using digital control's feature in switch power, a design scheme of SR digital Buck converter was put forward and analyzed the device choice.  ...  To extend the using fields of the prototype, designed the intelligence communication interface.  ...  Device Selection MOS Selection In synchronous rectifier circuit, the major loss of the switch MOS is switch loss P SW and the major loss of the rectifier is conduction loss P CON .  ... 
doi:10.12783/dteees/seeie2016/4540 fatcat:m7kmuehtdngibnuxeatml24fj4

High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec--Part II: Dynamic Switching and RF Performance

Daxin Han, Giorgio Bonomo, Diego Calvo Ruiz, Akshay Mahadev Arabhavi, Olivier J. S. Ostinelli, Colombo R. Bolognesi
2022 IEEE Transactions on Electron Devices  
Digital switching tests using a hybrid connected inverter reveal excellent capabilities for high clock rate operation.  ...  We show that GaInAs-based I-MOS devices offer high analog cutoff frequencies and low-noise characteristics, suggesting applicability for digital and RF applications on a single technological platform.  ...  Preliminary time-domain switching experiments using a hybrid-connected resistive load and ON-wafer devices confirm that GaInAs I-MOS can operate with high clock rates.  ... 
doi:10.1109/ted.2022.3171736 fatcat:c7ir34to65hq7a7jwfywncvzd4

Circuit-level considerations for mixed-signal programmable components

L. Carro, M. Negreiros, G.P. Jahn, A.A. de Souza, D.T. Franco
2003 IEEE Design & Test of Computers  
Some of our results, such as those for amplifiers and integrators, use only a small area and demonstrate a perfect balance between the possibility of programming an analog or a digital device in the same  ...  However, linear capacitors or resis-tors in MOS technology take up too much area. Moreover, programmability generally comes in the form of MOS switches.  ...  Any approach using MOS devices as switches will introduce nonlinearities in the signal path, necessitating a correction circuit.  ... 
doi:10.1109/mdt.2003.1173056 fatcat:4yi2lqxcyvb47c4n5cfsqoltqe

Design Approaches to Field-Programmable Analog Integrated Circuits [chapter]

Dean R. D'Mello, P. Glenn Gulak
1998 Field-Programmable Analog Arrays  
Various approaches have been taken in implementing structural and parametric programmability of analog circuits.  ...  A time-line of important achievements in the area is drawn, the status of various activities is summarized, and some directions for future research are suggested.  ...  In these designs, switches used for circuit operation are also used to program the circuit structure.  ... 
doi:10.1007/978-1-4757-5224-3_1 fatcat:kuu2vcc3qbg4fk2c5crcxllbbm

Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System

Jun Tae Jang, Jungi Min, Yeongjin Hwang, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim, Dae Hwan Kim
2020 IEEE Access  
Memristive devices have been considered one of the most promising candidates as a synaptic device thanks to their simple structure, low operating voltage, and fast switching speed, and the resistive switching  ...  In general, digital and analog switching behaviors in a memristive device can be obtained through the formation and rupture of conducting filaments by redox reactions and by oxidation-reduction or charge  ... 
doi:10.1109/access.2020.3032188 fatcat:h6lielzm3vf7hlxud6yj7dhbmu
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