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Silicon Carbide PiN and Merged PiN Schottky Power Diode Models Implemented in the Saber Circuit Simulator

T.R. McNutt, A.R. Hefner, H.A. Mantooth, J. Duliere, D.W. Berning, R. Singh
2004 IEEE transactions on power electronics  
Dynamic compact electrothermal models are developed for silicon carbide (SiC) power diodes.  ...  Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN Schottky and 5000 V SiC PiN diodes.  ...  The model parameters TSW and TM control the nonquasi-static charge sweep out effect and the nonquasi-static diffusion effect, respectively.  ... 
doi:10.1109/tpel.2004.826420 fatcat:d2itscbhdzh7bhvteghaiuezbu

A spline large-signal FET model based on bias-dependent pulsed I-V measurement

Kyoungmin Koh, Hyun-Min Park, Songcheol Hong
2002 IEEE transactions on microwave theory and techniques  
Index Terms-GaAs MESFET, large-signal model, nonquasi-static model, pulsed I-V, self-heating effects, spline, table-based model, trap effects.  ...  The validity of the model is demonstrated by comparing the simulated small-signal -parameters over a wide bias range with measured data.  ...  Nonlinear behaviors of FETs such as in out , third-order intermodulation distortion, and efficiency are also compared.IndexTerms-GaAs MESFET, large-signal model, nonquasi-static model, pulsed I-V, self-heating  ... 
doi:10.1109/tmtt.2002.804509 fatcat:fttidomwj5enjgag3ssr4tsmjy

Using power diode models for circuit simulations-a comprehensive review

Cher Ming Tan, King-Jet Tseng
1999 IEEE transactions on industrial electronics (1982. Print)  
In recent years, a number of new models for the power diode have been proposed.  ...  A summary table has been created to aid power circuit design engineers and power rectifier device engineers in selecting appropriate models for their applications.  ...  For high blocking voltage devices, the voltage-dependent reverse recovery is important. For p-v-n diodes, the nonquasi-static nature of the charge distribution should be considered.  ... 
doi:10.1109/41.767073 fatcat:di7726ykhverpe2ygbbxahwkgq

Simulating the dynamic electrothermal behavior of power electronic circuits and systems

A.R. Hefner, D.L. Blackburn
1993 IEEE transactions on power electronics  
A methodology is presented for simulating the dynamic electrothermal behavior of power electronic circuits and systems.  ...  The thermal network is coupled to the electrical network through the electrothermal models for the semiconductor devices.  ...  effects behave dynamically even for circuit conditions that are considered to be static for the electronic devices.  ... 
doi:10.1109/63.261007 fatcat:twv6l7zonjhvjhe5743mohy6xm

Electrothermal simulation of an IGBT PWM inverter

H.A. Mantooth, A.R. Hefner
1997 IEEE transactions on power electronics  
models for the power-device silicon chips, packages, and heat sinks.  ...  The electrothermal simulations are performed using the Saber circuit simulator and include control logic circuitry, IGBT gate drivers, the physics-based IGBT electrothermal model, and thermal network component  ...  In the thermal component models, a grid spacing that increases logarithmically with distance from the heat source is used to minimize the number of nodes required to accurately represent the nonquasi-static  ... 
doi:10.1109/63.575675 fatcat:4cnststcobcarirkfiam3ryk4i

ENERGY TRANSFER FOR IMPLANTABLE ELECTRONICS IN THE ELECTROMAGNETIC MIDFIELD (Invited Paper)

John S. Ho, Ada S. Y. Poon
2014 Electromagnetic Waves  
Most systems for transfer across the biological tissue operate in the quasi-static limit, but operation beyond this regime could afford new powering capabilities.  ...  Figure 2(a) shows the efficiency as a function of frequency for the multilayer model and a realistic human body model where the current sheet has been discretized into an array of 550 elements.  ...  The resulting matrix can be used to obtain an estimate of the optimal source for the body model.  ... 
doi:10.2528/pier14070603 fatcat:fwadp5tfczha3eunop7cwtbrme

Field-Effect Transistor Based Detectors for Power Monitoring of THz Quantum Cascade Lasers

Justinas Zdanevicius, Dovile Cibiraite, Kestutis Ikamas, Maris Bauer, Jonas Matukas, Alvydas Lisauskas, Heiko Richter, Till Hagelschuer, Viktor Krozer, Heinz-Wilhelm Hubers, Hartmut G. Roskos
2018 IEEE Transactions on Terahertz Science and Technology  
We report on circuit simulation, modeling, and characterization of field-effect transistor based terahertz (THz) detectors (TeraFETs) with integrated patch antennas for discrete frequencies from 1.3 to  ...  The modeled radiation efficiency at the target frequency is 76% with a maximum directivity of 5.5, resulting in an effective area of 1750 µm 2 .  ...  We can just speculate that a 65-nm model accounts better for nonquasi-static effects, thus supporting the rationale of the analytical model. Fig. 4 . Measurement setup.  ... 
doi:10.1109/tthz.2018.2871360 fatcat:dlyfxr63jjbe7gybgf3m5mv7km

A Physically Based, Scalable MOS Varactor Model and Extraction Methodology for RF Applications

J. Victory, Z. Yan, G. Gildenblat, C. McAndrew, J. Zheng
2005 IEEE Transactions on Electron Devices  
The model, implemented in Verilog-A for simulator portability, provides for robust and accurate RF simulation of MOS varactors.  ...  A physically based scalable model for MOS varactors, including analytical surface potential based charge modeling and physical geometry and process parameter based parasitic modeling, is proposed.  ...  Racanelli of Jazz Semiconductor for assistance and support of this work, and to H. Wang, W. Wu, and X. Li for several illuminating discussions of this work.  ... 
doi:10.1109/ted.2005.850693 fatcat:ffhirktcfvhinnxyagsqwzx42m

A review of IGBT models

Kuang Sheng, B.W. Williams, S.J. Finney
2000 IEEE transactions on power electronics  
Features of the different models are listed. Different modeling criteria are discussed according to various circuit conditions, structures, thermal considerations and accuracies.  ...  Some problems and trends in IGBT modeling are discussed.  ...  Therefore, more accurate results are obtained with the Hefner model since it includes nonquasi-static carrier redistribution capacitance [9] , [11] - [15] , [17] , [18] , [32] .  ... 
doi:10.1109/63.892840 fatcat:4gw4xowd4zcbvolklfcd6ihfju

Terahertz Imaging Detectors in CMOS Technology

Erik Öjefors, Alvydas Lisauskas, Diana Glaab, Hartmut G. Roskos, Ullrich R. Pfeiffer
2009 Journal of Infrared, Millimeter and Terahertz Waves  
A low-frequency (quasi-static) and a high-frequency (non-quasi-static) analysis of the broad-band circuit is presented.  ...  Square-law power detection circuits with on-chip antennas and amplifiers are presented for the detection of 0.65-THz radiation in a low-cost 0.25-μm CMOS technology.  ...  For the low-frequency performance of the circuits a quasi-static analysis is sufficient, where as for terahertz frequencies, the analysis has been further generalized by a nonquasi-static (NQS) description  ... 
doi:10.1007/s10762-009-9569-4 fatcat:gelz76zqgragpja573jzqrx5t4

Table of Contents

2022 IEEE transactions on power electronics  
Zhu Modeling Turn-off Process of High-Power IGBT Based on Both Quasi Static and Nonquasi Static Assumptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  ...  Ciric Fast Simulation Model of Voltage Source Converters With Arbitrary Topology Using Switch-State Prediction . . . . . . . . .  ... 
doi:10.1109/tpel.2022.3183941 fatcat:m3csoswo4rdchbsggiqxcgmpiy

Simulating circuits and devices

T.J. Brazil
2003 IEEE Microwave Magazine  
Figure 4 . 4 More advanced MESFET equivalent circuit model development, including nonquasi-static effects (RGSI and RDSI), forward Schottky conduction (DGS and DGD), and dispersion correction network (  ...  The device is modeled with an electrothermal, nonlinear, equivalent circuit model, and it has been found that using a solution method based on discrete-time convolution, a highly accurate, efficient and  ... 
doi:10.1109/mmw.2003.1188235 fatcat:23zgavrtfvhwxenuhtt2nkaxwq

Compact Noise Models for MOSFETs

R.P. Jindal
2006 IEEE Transactions on Electron Devices  
A survey of current public domain MOS models is presented, and a lack of comprehensive coverage of noise models is noted.  ...  Where available, compact noise models covering these noise mechanisms are explained. Also, where possible, methods of suppression of these mechanisms are highlighted.  ...  Hence, noise modeling in the nonquasi-static regime [18] , [105] will assume more importance in coming years.  ... 
doi:10.1109/ted.2006.880368 fatcat:vuuaqebtinhozlek6jrjaralzq

A design system for RFIC: challenges and solutions

P. Miliozzi, K. Kundert, K. Lampaert, P. Good, M. Chian
2000 Proceedings of the IEEE  
We give an overview of the advanced methods and tools currently available for simulation and noise analysis of RF devices. Finally, we show a design example that obtained first-silicon success.  ...  A close link between schematic, models, and layout is of paramount importance to ensure the accuracy needed for low-power RF design.  ...  Using this simple equivalent circuit has several advantages over more complicated ones that take nonquasi-static effects into account.  ... 
doi:10.1109/5.888999 fatcat:wm65f5h2djhjdmvdlyio7uchmy

RF electro-thermal modeling of LDMOSFETs for power-amplifier design

S. Akhtar, P. Roblin, Sunyoung Lee, Xiaohui Ding, Shuang Yu, J. Kasick, J. Strahler
2002 IEEE transactions on microwave theory and techniques  
Index Terms-B-spline representation, electrothermal FET model, LDMOSFET, nonquasi-static equivalent circuit, RF power amplifiers.  ...  A new approach for the electro-thermal modeling of LDMOSFETs for power-amplifier design that bypasses pulsed-IVs and pulsed-RF measurements is presented in this paper.  ...  The developed model is implemented in the ADS circuit simulator and used for power-amplifier simulations.  ... 
doi:10.1109/tmtt.2002.1006418 fatcat:iz5b3f5jo5aydozv7dtu456rsy
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