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Product On-Chip Process Compensation for Low Power and Yield Enhancement [chapter]

Nabila Moubdi, Philippe Maurine, Robin Wilson, Nadine Azemard, Vincent Dumettier, Abhishek Bansal, Sebastien Barasinski, Alain Tournier, Guy Durieu, David Meyer, Pierre Busson, Sarah Verhaeren (+1 others)
2010 Lecture Notes in Computer Science  
This paper aims at introducing a reliable on-chip process compensation flow for industrial integrated systems.  ...  The proposed design flow includes efficient methodologies to gather/sort on-chip process data but also post-silicon tuning strategies and validation methods at both design and test steps.  ...  On Chip Performance Monitors To allow on-chip performance monitoring, a set of specific oscillators were designed to monitor individually the performances of NMOS and PMOS in terms of speed and leakage  ... 
doi:10.1007/978-3-642-11802-9_29 fatcat:vqj74wa7sfd3rpbcerglctj334

A 135mV 0.13μW process tolerant 6T subthreshold DTMOS SRAM in 90nm technology

Myeong-Eun Hwang, Kaushik Roy
2008 2008 IEEE Custom Integrated Circuits Conference  
Cell stability and tolerance to process variation are of primary importance in subthreshold SRAMs. We propose a DTMOS based 6T SRAM suitable for subthreshold operation.  ...  The proposed SRAM achieves 200% improvement in read static noise margin at iso-area compared to the conventional 6T SRAM at a supply voltage of 200mV.  ...  Fig. 3 (b) shows one possible layout of the pDT cell. Due to separation of body contacts for PMOS devices, the pDT cell requires 78% larger area than the standard CMOS cell in 90nm process.  ... 
doi:10.1109/cicc.2008.4672109 dblp:conf/cicc/HwangR08 fatcat:hxjvhd4lcvfz3cqq437ewvbu7e

Ultra-low-power DLMS adaptive filter for hearing aid applications

C.H.-I. Kim, H. Soeleman, K. Roy
2003 IEEE Transactions on Very Large Scale Integration (vlsi) Systems  
To validate the robust operation of subthreshold logics, a 0.35 m, 23.1 kHz, 21.4 nW, 8 8 carry save array multiplier test chip was fabricated where an adaptive body biasing scheme is used for compensating  ...  The test chip showed stable operation at a supply voltage of 0.30 V, which is even lower than the threshold voltages of the pMOS (0.82 V) and nMOS (0.67 V) transistors.  ...  The compensation scheme is based on variable threshold CMOS (VTCMOS) where a leakage current monitor (LCM) detects the PVT variations and a self-substrate biasing (SSB) circuit applies the appropriate  ... 
doi:10.1109/tvlsi.2003.819573 fatcat:tzde54ybkbblxlshni5hlit6f4

A Reactive and On-Chip Sensor Circuit for NBTI and PBTI Resilient SRAM Design

Nandakishor Yadav, Youngbae Kim, Mahmoud Alashi, Kyuwon Ken Choi
2020 Electronics  
The proposed sensor-based adaptive technique compensates for the variation due to PV and aging using the body-bias-voltage-generator circuit.  ...  Simulation experiments for three and ten-year stress have been performed.  ...  Acknowledgments: We thank our colleagues from KETI and KEIT who provided insight and expertise that greatly assisted the research and greatly improved the manuscript.  ... 
doi:10.3390/electronics9020326 fatcat:nkcio7xnejdepaxoqfasm5xcky

Technology Variability From a Design Perspective

Borivoje Nikolic, Ji-Hoon Park, Jaehwa Kwak, Bastien Giraud, Zheng Guo, Liang-Teck Pang, Seng Oon Toh, Ruzica Jevtic, Kun Qian, Costas Spanos
2011 IEEE Transactions on Circuits and Systems Part 1: Regular Papers  
Increased variability in semiconductor process technology and devices requires added margins in the design to guarantee the desired yield.  ...  Variability is characterized with respect to the distribution of its components, its spatial and temporal characteristics and its impact on specific circuit topologies.  ...  Radu Zlatanovici, Changhwan Shin, Lynn Wang, Jason Tsai, Kenneth Duong, and Lauren Jones.  ... 
doi:10.1109/tcsi.2011.2165389 fatcat:jofyzmwehrgtvcmpddudtizwoe

Tbulk-BICS: A Built-In Current Sensor Robust to Process and Temperature Variations for Soft Error Detection

Egas Henes Neto, Fernanda Lima Kastensmidt, Gilson Wirth
2008 IEEE Transactions on Nuclear Science  
Each sensor is controlled by a set of trimming bits that can be used to attune the sensitivity of the sensor compensating process and temperature variations.  ...  area overhead.  ...  Each N-BICS and P-BICS can monitor a certain silicon area that contains a number of NMOS and PMOS transis- tors, respectively.  ... 
doi:10.1109/tns.2008.920426 fatcat:6xjpvmxw45banhhdhsl2xcxnzy

sBSNN: Stochastic-Bits Enabled Binary Spiking Neural Network with On-Chip Learning for Energy Efficient Neuromorphic Computing at the Edge [article]

Minsuk Koo, Gopalakrishnan Srinivasan, Yong Shim, Kaushik Roy
2020 arXiv   pre-print
CMOS process, to achieve efficient on-chip training and inference for image recognition tasks.  ...  one-bit precision for power-efficient and memory-compressed neuromorphic computing.  ...  Also, the PMOS and NMOS sizing, and bit-precision for the respective codes can be tuned based on the application requirements. B.  ... 
arXiv:2002.11163v1 fatcat:c457skonkfauhg2zmht7ereuqy

Design of a wide-band frequency synthesizer based on TDC and DVC techniques

Terng-Yin Hsu, Terng-Ren Hsu, Chung-Cheng Wang, Yi-Chuan Liu, Chen-Yi Lee
2002 IEEE Journal of Solid-State Circuits  
A wide-band frequency synthesizer based on time-todigital (TDC) and digital-to-voltage (DVC) conversion techniques is proposed here.  ...  A test chip is designed and fabricated in 0.6-m CMOS single-poly triple-metal process. Here, the novel DVC circuit is realized by tristate inverters, where the resolution can achieve 0.2 mV.  ...  ., for many fruitful suggestions in implementations. The Multiple-Project Chip (MPC) support from NSC/CIC is acknowledged as well.  ... 
doi:10.1109/jssc.2002.803011 fatcat:kjhz5h5xzjasrcfjyz4kasqvwa

CMOS Leakage and Power Reduction in Transistors and Circuits: Process and Layout Considerations

Eitan N. Shauly
2012 Journal of Low Power Electronics and Applications  
For achieving this power reduction, solutions based on process-device and process-integration improvements, on careful layout modification as well as on circuit design are in use.  ...  For standard cells and SRAMs cells, leakage aware layout optimization techniques considering transistor configuration, stressors, line-edge-roughness and more are presented.  ...  Israel Rotstein for fruitful discussions, and to O. Menadeva and S. Levi from Applied Materials, Israel for the design aware experiments reviewed in this paper.  ... 
doi:10.3390/jlpea2010001 fatcat:m67kazgmfbcwvktbtqurnevh74

Standby supply voltage minimization for deep sub-micron SRAM

Huifang Qin, Yu Cao, Dejan Markovic, Andrei Vladimirescu, Jan Rabaey
2005 Microelectronics Journal  
This paper models the DRV of a standard low leakage SRAM module as a function of process and design parameters, and analyzes the SRAM cell stability when V DD approaches DRV.  ...  Due to a large on-chip variation, DRV of the 4 KB SRAM module ranges between 60 and 390 mV.  ...  The authors would also like to thank to Professor Seth Sanders and Dr. Bhusan Gupta for their enlightening technical advice.  ... 
doi:10.1016/j.mejo.2005.03.003 fatcat:hupcro7gh5d4dpg4kznatc6wt4

Physically clustered forward body biasing for variability compensation in nanometer CMOS design

A. Sathanur, A. Pullini, L. Benini, G. De Micheli, E. Macii
2009 2009 Design, Automation & Test in Europe Conference & Exhibition  
Nanometer CMOS scaling has resulted in greatly increased circuit variability, with extremely adverse consequences on design predictability and yield.  ...  Adaptive Body Bias (ABB) is one of the most successful tuning "knobs" in use today in high-performance custom design.  ...  Note that our methodology works on standard cell based designs and we apply body bias voltage at standard cell row level granularity.  ... 
doi:10.1109/date.2009.5090650 dblp:conf/date/SathanurPBMM09 fatcat:ne6k7zfitbdgjl47obcmxvu6a4

Statistical reliability analysis of NBTI impact on FinFET SRAMs and mitigation technique using independent-gate devices

Yao Wang, Sorin D. Cotofana, Liang Fang
2012 Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures - NANOARCH '12  
Dynamic NBTI stress on SRAM cells is modeled by using stochastic input signals.  ...  Our simulations conducted at an accelerated temperature 125 • C for 10 8 seconds (∼3 years) indicate that a V th compensation of 0.2V can almost preserve the WRITE and HOLD stability of the fresh device  ...  IG-FinFET Based V th Compensation Scheme for SRAM Cells In order to minimize the damage caused by NBTI and increase the read stability of the SRAM cell, in this section we demonstrate an NBTI mitigation  ... 
doi:10.1145/2765491.2765512 dblp:conf/nanoarch/0002CF12 fatcat:p5edthdvyvbsbng2fu7gkiyc5q

Process Variations and Process-Tolerant Design

Swarup Bhunia, Saibal Mukhopadhyay, Kaushik Roy
2007 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07)  
This article analyzes the impact of process parameter variations on logic circuits and memory and focuses on some major works in the area of process-tolerant design methodology at circuiffarchitecture  ...  While CMOS technology has served semiconductor industry marvelously (by allowing nearly exponential increase in performance and device integration density), it faces some major roadblocks at sub-90nm process  ...  A bidirectional adaptive body bias (ABB) technique is used to compensate for die-to-die parameter variations in [IS] by applying an optimum PMOS and nMOS body bias voltage to each die.  ... 
doi:10.1109/vlsid.2007.131 dblp:conf/vlsid/BhuniaMR07 fatcat:haw2cidqhng7ngucgvwiftnsza

Wide-supply-range all-digital leakage variation sensor for on-chip process and temperature monitoring

A. K. M. Mahfuzul Islam, Jun Shiomi, Tohru Ishihara, Hidetoshi Onodera
2014 2014 IEEE Asian Solid-State Circuits Conference (A-SSCC)  
This paper proposes an all-digital on-chip circuit to monitor leakage current variations of both of the nMOSFET and pMOS-FET independently.  ...  The proposed technique enables area-efficient and low-cost implementation thus can be used in product chips for applications such as dynamic energy and thermal management, testing and post-silicon tuning  ...  Digital approach using standard cells fails to give us area-efficiency to implement local variability monitors [27] .  ... 
doi:10.1109/asscc.2014.7008856 dblp:conf/asscc/MahfuzulSIO14 fatcat:klhgucltnbcx5cwsynq46if4p4

Variation in Transistor Performance and Leakage in Nanometer-Scale Technologies

Sharad Saxena, Christopher Hess, Hossein Karbasi, Angelo Rossoni, Stefano Tonello, Patrick McNamara, Silvia Lucherini, SeÁn Minehane, Christoph Dolainsky, Michele Quarantelli
2008 IEEE Transactions on Electron Devices  
This paper then illustrates the impact of the observed variability on SRAM, analog and digital circuit blocks used in system-on-chip designs.  ...  Different approaches for minimizing transistor variation and mitigating its impact on product performance and yield are also described.  ...  The first is included as part of a full reticle characterization vehicle (CV) test chip for characterizing the impact of front end of the line processing on yield and transistor performance and variability  ... 
doi:10.1109/ted.2007.911351 fatcat:i5eigzxd7ba4fgocgh2vcfbwtq
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