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Embedded I/O PAD Circuit Design for OTP Memory Power-Switch Functionality

Shao-Chang Huang, Ke-Horng Chen, Wei-Yao Lin, Zon-Lon Lee, Kun-Wei Chang, Erica Hsu, Wenson Lee, Lin-Fwu Chen, Chris Lu
2012 IEEE Transactions on Very Large Scale Integration (vlsi) Systems  
An additional high-voltage pad is generally applied for one-time-programming (OTP) memory product applications.  ...  In this paper, a novel approach of I/O circuit embedded with the power-switch function is proposed for multifunction integrations in one I/O pad.  ...  Chang for her testing support and S. Huang, J. Lee, H. Lee, and M. Ho for their help in project planning.  ... 
doi:10.1109/tvlsi.2011.2106808 fatcat:3ix23qheere4pjwn56s3t2inbu

Modular Multilevel SOI-CMOS Active Gate Driver Architecture for SiC MOSFETs

Nicolas Rouger, Yazan Barazi, Marc Cousineau, Frederic Richardeau
2020 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)  
We propose a modular multilevel architecture, which takes benefits of SOI isolation and low voltage CMOS transistors to drive SiC MOSFETs and to improve their reliability using an active and dynamic multilevel-selection  ...  High Voltage SiC power MOSFETs have specific driving challenges such as a reduced short circuit capability (compared to Si IGBTs) and a weak field oxide layer, a large gate to source driving voltage (compared  ...  We thank Europractice-IC and IMEC for MPW and technical support, as well as XFAB for fruitful discussions and technical exchanges.  ... 
doi:10.1109/ispsd46842.2020.9170181 fatcat:pzg3u2u7yraoran24sdv2uuvmm

A 2.56-GHz SEU Radiation Hard $LC$ -Tank VCO for High-Speed Communication Links in 65-nm CMOS Technology

Jeffrey Prinzie, Jorgen Christiansen, Paulo Moreira, Michiel Steyaert, Paul Leroux
2018 IEEE Transactions on Nuclear Science  
This paper presents a radiation tolerant Phase-Locked Loop (PLL) CMOS ASIC with an optimized Voltage Controlled Oscillator (VCO) for Single-Event Upsets (SEUs).  ...  The circuit is designed for high-energy particle physics experiments for low-jitter clock generation and clock recovery.  ...  These circuits all contain a Phase-Locked Loop (PLL) that generates the data transmission timing, as well as clock-recovery from a serial data stream with a low power consumption and low jitter.  ... 
doi:10.1109/tns.2017.2764501 fatcat:qhgtdblfkjel7bnpumgyprh3ru

New 4-Bit Transient-to-Digital Converter for System-Level ESD Protection in Display Panels

Ming-Dou Ker, Cheng-Cheng Yen
2012 IEEE transactions on industrial electronics (1982. Print)  
A new on-chip 4-bit transient-to-digital converter for system-level electrostatic discharge (ESD) protection design is proposed.  ...  The proposed on-chip transient-to-digital converter can be codesigned with firmware operations to effectively enhance immunity of display systems against system-level ESD stresses.  ...  Chen for their valuable technical discussions.  ... 
doi:10.1109/tie.2011.2157292 fatcat:ucnfspxexbgdrcgqcilvwccvay

Design and Performance Evaluation of Multi-Gb/s Silicon Photonics Transmitters for High Energy Physics

Simone Cammarata, Gabriele Ciarpi, Stefano Faralli, Philippe Velha, Guido Magazzù, Fabrizio Palla, Sergio Saponara
2020 Energies  
Silicon photonics (SiPh) stands as an attractive candidate to sustain the radiation levels foreseen in the next-generation experiments, while guaranteeing, at the same time, multi-Gb/s and energy-efficient  ...  The proposed driver, realized in a 65 nm bulk technology and already tested to behave properly up to an 8 MGy total ionizing dose, is hybridly integrated in this work with a lumped-element Mach–Zehnder  ...  Vasey for their support during the work and for providing the photonic integrated circuit, the printed circuit board for hybrid integration, and some electronic building blocks.  ... 
doi:10.3390/en13143569 fatcat:2ccug2i6wjcodjlbmwjlndbmfq

Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET

Zhaonian Yang, Yuan Yang, Ningmei Yu, Juin Liou
2018 Micromachines  
Under a transmission line pulsing (TLP) stressing condition, the triggering voltage of the SiGe S/D TFET is reduced by 35% and the failure current is increased by 17% in comparison with the conventional  ...  In addition, silicon-germanium (SiGe) engineering is shown to improve the performance of TFET-based ESD protection devices.  ...  All authors discussed the results, read, and approved the final manuscript. Conflicts of Interest: The authors declare no conflicts of interest.  ... 
doi:10.3390/mi9120657 pmid:30545073 pmcid:PMC6316336 fatcat:f45mv35yw5crvl4ulm5yir4i5u

The power system [chapter]

B.J. Cory, M.R. Irving
2005 Newnes Electrical Power Engineer's Handbook  
In a national power system, many thousands of transformers and their associated circuit breakers or fuses/protective devices are required for distribution to low-voltage circuits, in contrast to high-voltage  ...  connection and the power losses in the low-voltage circuit.  ... 
doi:10.1016/b978-075066268-0/50013-5 fatcat:c2es4fjjhzbezh3iyftdi22xxq

On-Chip Noise Sensor for Integrated Circuit Susceptibility Investigations

Sonia Dhia, Alexandre Boyer, Bertrand Vrignon, Mikaël Deobarro, Thanh Vinh Dinh
2012 IEEE Transactions on Instrumentation and Measurement  
With the growing concerns about electromagnetic compatibility of integrated circuits, the need for accurate prediction tools and models to reduce risks of noncompliance becomes critical for circuit designers  ...  However, an on-chip characterization of noise is still necessary for model validation and design optimization.  ...  of the level shifter power supply.  ... 
doi:10.1109/tim.2011.2172116 fatcat:jkufs4cdqve2fjeopgasjx77aq

High-/Mixed-Voltage RF and Analog CMOS Circuits Come of Age

Pui-In Mak, Rui P Martins
2010 IEEE Circuits and Systems Magazine  
When design-for-reliability (i.e., no overstress on any device) is included in the design flow, an elevated V DD outpacing the technology roadmap can reliably enlarge the voltage headroom (V DD -V T )  ...  Consequently, the exploration of a voltage islanding concept in a power management unit would become essential for distribution of the supply voltages to different functions appropriately.  ...  Clock level shifter for 1 to 2.5 V. Figure 19 . 19 (a) CO line driver with a 23V DD,c .  ... 
doi:10.1109/mcas.2010.938636 fatcat:pttm6fgojnh4ddjfpfm355gzem

Ion cyclotron resonance heating system on Aditya

D. Bora, Sunil Kumar, Raj Singh, S. V. Kulkarni, A. Mukherjee, J. P. Singh, Raguraj Singh, S. Dani, A. Patel, Sai Kumar, V. George, Y. S. S. Srinivas (+13 others)
2005 Sadhana (Bangalore)  
Radio frequency (RF) power (225 kW) has been generated and successfully tested on a dummy load for 100 s at 30·0 MHz. Lower powers have been coupled to Aditya in a breakdown experiment.  ...  An ion cyclotron resonance heating (ICRH) system has been designed, fabricated indigenously and commissioned on Tokamak Aditya.  ...  Authors would like to thank Dr P K Kaw for his constant support during the project. One of the authors (DKB) would also like to thank Dr B K Sinha for his support and encouragement.  ... 
doi:10.1007/bf02710077 fatcat:l32sly5ldnd7jnkxfhoffgnuqi

A new approach to designing electronic systems for operation in extreme environments: Part I - The SiGe Remote Sensor Interface

Ryan M. Diestelhorst, Troy D. England, Richard Berger, Ray Garbos, Chandradevi Ulaganathan, Ben Blalock, Kimberly Cornett, Alan Mantooth, Xueyang Geng, Foster Dai, Wayne Johnson, Jim Holmes (+8 others)
2012 IEEE Aerospace and Electronic Systems Magazine  
The low-power ADC also incorporates system-level, Single-Event Latch-up (SEL) detection and mitigation against heavy-ion radiation using a Radiation Aware Power Management (RAPM) scheme.  ...  Known as Single Event Latch-up (SEL), this is a catastrophic failure that must be carefully protected against in all systems exposed to heavy-ion radiation, particularly in technologies that use low resistivity  ... 
doi:10.1109/maes.2012.6328550 fatcat:czlvclvb3bdwrjxvrcucxgsgcm

The NATO III 5 MHz Distribution System

A. Vulcan, M. Bloch
1981 Thirty Fifth Annual Frequency Control Symposium  
The system is completely redundant with automatic switchover and is self-testing. Faults can be isolated to a modular level by observing front panel status indicators.  ...  The distribution system is fed by redundant high stability quartz frequency standards which use special crystals with low phase noise and jitter and a daily aging rate better than 5 X 10~H.  ...  I really want to know with your power supply, how much protection can it give against all these frequency surges? MR. BLOCH: Could you repeat the question? 763 MR.  ... 
doi:10.1109/freq.1981.200525 fatcat:plypygiwybhhdoseueaw6jwpza

The Mechanical Effects Influencing on the Design of RF MEMS Switches

Igor E. Lysenko, Alexey V. Tkachenko, Olga A. Ezhova, Boris G. Konoplev, Eugeny A. Ryndin, Elena V. Sherova
2020 Electronics  
In these operating conditions, these devices are often exposed to intense mechanical environmental influences that have a strong impact on their operation.  ...  Radio-frequency switches manufactured by microelectromechanical systems technology are now widely used in aerospace systems and other mobile installations for various purposes.  ...  External protection can further be divided into two categories: active protection, where an external power source is required to maintain the clamp, and passive protection, where an external power source  ... 
doi:10.3390/electronics9020207 fatcat:c3mxatyv6jbenbwfutdqpcvpqu

A Fully-Integrated 3-Level DC-DC Converter for Nanosecond-Scale DVFS

Wonyoung Kim, David Brooks, Gu-Yeon Wei
2012 IEEE Journal of Solid-State Circuits  
Index Terms-DC-DC conversion, dynamic voltage and frequency scaling, fully integrated converter, switching converter, 3-level.  ...  It achieves 77% peak efficiency at power density of 0.1 W/mm 2 and 63% efficiency at maximum power density of 0.3 W/mm 2 .  ...  In contrast, maximum voltage stress is 1.4 V for nFETs sitting between and 0, allowing for thin-oxide devices. IV.  ... 
doi:10.1109/jssc.2011.2169309 fatcat:uhbp7ztsnrbupahid7xs2g7zte

Current Status and Future Trends of GaN HEMTs in Electrified Transportation

Niloufar Keshmiri, Deqiang Wang, Bharat Agrawal, Ruoyu Hou, Ali Emadi
2020 IEEE Access  
Future trends of GaN devices in terms of cost, voltage level, gate driver design, thermal management and packaging are investigated.  ...  Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical  ...  Half-bridge power ICs combine two MOSFETs with the drive and protection circuitry. With the 650 V GaN power IC, the losses in the level-shifter are 10 times lower than Si [116] .  ... 
doi:10.1109/access.2020.2986972 fatcat:llgeij4kirarhgttzbhb6dgksy
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