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Flip-Chip Integration of InP to SiN Photonic Integrated Circuits

Michael Andreas Davy Theurer, Dimitri Geskus, Kerstin Worhoff, Ronald Dekker, R. G. Heideman, Martin Schell, Martin Moehrle, Ariane Sigmund, Karl-Otto Velthaus, Ruud M. Oldenbeuving, Lennart S. Wevers, Ferry Postma (+2 others)
2020 Journal of Lightwave Technology  
We evaluate the feasibility of the assembly process for complex photonic integrated circuits by integrating an InP gain chip to a SiN TriPleX external cavity.  ...  We present our hybrid InP to SiN TriPleX integration interface with a novel alignment technique and its application to complex photonic integrated circuits.  ...  9 Schematic (top) and photograph (bottom) of a hybrid integrated tunable laser chip with SiN TriPleX external cavity and InP gain chip.  ... 
doi:10.1109/jlt.2020.2972065 fatcat:x63mybnrmfe7lfm2shyaxp7ss4

A Single Mode Hybrid III–V/Silicon On-Chip Laser Based on Flip-Chip Bonding Technology for Optical Interconnection

Hai-Ling Wang, Wan-Hua Zheng
2016 Chinese Physics Letters  
A single mode Fabry-Pérot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AlGaInAs multiple quantum well epitaxial layer structure wafer by using i-line  ...  A single mode hybrid III-V/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated.  ...  [18] Kotura's design utilizes an external cavity reflective semiconductor optical amplifier (SOA), butt-coupled to a silicon waveguide Bragg mirror on an SOI chip.  ... 
doi:10.1088/0256-307x/33/12/124207 fatcat:i7rmc4khwncslbjmzn33dthka4

Integrated III-V Photonic Crystal – Si waveguide platform with tailored optomechanical coupling

Viktor Tsvirkun, Alessandro Surrente, Fabrice Raineri, Grégoire Beaudoin, Rama Raj, Isabelle Sagnes, Isabelle Robert-Philip, Rémy Braive
2015 Scientific Reports  
This hybrid 3D integration is demonstrated by vertically stacking an array of standalone InP-based optomechanical resonators on top of low-loss silicon-on-insulator (SOI) optical waveguides [see Fig. 1  ...  Cavity optomechanics explores the coupling between the degrees of freedom of a mechanical oscillator and those of an optical or a microwave mode, allowing for optical sensing and control of the mechanical  ...  Optomechanics, and the European Research Area Network (ERANet) project OMC.  ... 
doi:10.1038/srep16526 pmid:26567535 pmcid:PMC4644963 fatcat:dubu43toeze3ze55s6eacmxmhq

Integrated Hybrid Lasers and Amplifiers on a Silicon Platform

Richard Jones, Matthew N. Sysak, Hyundai Park, Alexander W. Fang, Hsu-Hao Chang, Ying Hao Kuo, John E. Bowers, Omri Raday, Oded Cohen
2008 OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference  
An overview is given of the hybrid AlGaInAs-silicon platform where InP active and silicon passive components are integrated using wafer bonding.  ...  Hybrid optical amplifiers and lasers demonstrate the functionality this platform brings to silicon photonics.  ...  Acknowledgement This research was partially supported by DARPA and the Army under contract W911NF-05-1-0175 and W911NF-04-9-0001.We thank H. W. Chen for dicing.  ... 
doi:10.1109/ofc.2008.4528735 fatcat:7322gbmm55hm7fjxrxtjqrmxwe

External Control of Dissipative Coupling in a Heterogeneously Integrated Photonic Crystal—SOI Waveguide Optomechanical System

Viktor Tsvirkun, Alessandro Surrente, Fabrice Raineri, Grégoire Beaudoin, Rama Raj, Isabelle Sagnes, Isabelle Robert-Philip, Rémy Braive
2016 Photonics  
In this work we demonstrate an external optical control over the dissipative optomechanical coupling strength mediated by the modulation of the absorption of a quantum dot layer in a hybrid optomechanical  ...  ) coupling strength via the geometry of the integrated access waveguide.  ...  Discussion and Conclusions We have demonstrated hybrid optomechanical resonators, consisting of a thin InP membrane embedding a single layer of InAs(P) QDs and an L 3 PhC cavity, coupled to an integrated  ... 
doi:10.3390/photonics3040052 fatcat:f24jvz2mgfgnrba62cjb33hewi

Heterogeneous III–V/Silicon-on-insulator photonic integrated circuits

G. Roelkens, L. Liu, J. Van Campenhout, J. Brouckaert, D. Van Thourhout, R. Baets
2008 2008 International Conference on Photonics in Switching  
III-V/Silicon-on-insulator photonics comprises the heterogeneous integration of a III-V layer on top of an SOI waveguide circuit.  ...  We elaborate on the fabrication technology and the realization of III-V/SOI photonic integrated circuits.  ...  In section 3, the realization of III-V microdisk lasers integrated on and coupled to an SOI waveguide circuit will be discussed, while in section 4, a new type of hybrid III-V/SOI microcavity will be proposed  ... 
doi:10.1109/ps.2008.4804174 fatcat:w3ktop5jzrdnfierkdlskv3nya

Integration of hybrid silicon lasers and electroabsorption modulators

Matthew N. Sysak, Joel O. Anthes, John E. Bowers, Omri Raday, Richard Jones
2008 Optics Express  
eScholarship provides open access, scholarly publishing services to the University of California and delivers a dynamic research platform to scholars worldwide.  ...  Acknowledgments The authors would like to thank Anand Ramaswamy, Hui-Wen Chen, Molly Piels, Di Liang and Erica Lively for valuable discussions and help with device fabrication and testing.  ...  Introduction of intermixing to the hybrid silicon laser fabrication process translates to patterning III-V wafer before bond step, thus necessitating alignment of the III-V to SOI wafer during bonding.  ... 
doi:10.1364/oe.16.012478 pmid:18711484 fatcat:l3pmfsntvvae7dv7jno4s4wc4q

Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication

Hang Guan, Ari Novack, Tal Galfsky, Yangjin Ma, Saeed Fathololoumi, Alexandre Horth, Tam N. Huynh, Jose Roman, Ruizhi Shi, Michael Caverley, Yang Liu, Thomas Baehr-Jones (+2 others)
2018 Optics Express  
We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform.  ...  The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across  ...  A major challenge for III-V/silicon hybrid external cavity lasers is overcoming wavelength drift and mode-hopping during the lifetime of the laser [41, 42] .  ... 
doi:10.1364/oe.26.007920 pmid:29715766 fatcat:dlnfzfbnwvgyhbc5dq7ewucnsm

A narrow-linewidth III-V/Si/Si3N4 laser using multilayer heterogeneous integration [article]

Chao Xiang, Warren Jin, Joel Guo, Jonathan D. Peters, MJ Kennedy, Jennifer Selvidge, Paul A. Morton, John E. Bowers
2019 arXiv   pre-print
Here, we demonstrate a novel III-V/Si/Si3N4 structure to enable efficient electrically pumped lasing in a Si3N4 based laser external cavity.  ...  Multilayer heterogeneous integration could extend the capabilities of semiconductor lasers to improve performance and enable a new class of devices such as integrated optical clocks and optical gyroscopes  ...  Tran and A. Malik for useful discussion in fabrication, and support from Defense Advanced Research Projects Agency (DARPA) (W911NF-19-C-0003).  ... 
arXiv:1911.06780v1 fatcat:6kkk7bofxneuxkifnimwqjw4ge

Hybrid silicon integration

R. Jones, H. D. Park, A. W. Fang, J. E. Bowers, O. Cohen, O. Raday, M. J. Paniccia
2007 Journal of materials science. Materials in electronics  
Discrete hybrid silicon optical amplifiers, lasers and photodetectors are described, and the integration of a ring laser with on-chip and photo-detector and amplified spontaneous emission (ASE) seed to  ...  Wafer bonding AlGaInAs quantum wells to an SOI wafer allows large scale hybrid integration without any critical alignment steps.  ...  Acknowledgements This work was supported by DARPA through contracts W911NF-05-1-0175 and W911NF-04-9-0001, and by Intel.  ... 
doi:10.1007/s10854-007-9418-y fatcat:j3u5iyewhrfv5ee2hvlul667pm

Integrated hybrid silicon DFB laser-EAM array using quantum well intermixing

Siddharth R. Jain, Matthew N. Sysak, Geza Kurczveil, John E. Bowers
2011 Optics Express  
A broadband DFB laser array and a DFB-EAM array are realized on a single chip using four bandgaps defined by ion implantation enhanced disordering.  ...  The broadband laser array uses two bandgaps with 17 nm blue shift to compensate for gain roll-off while the integrated DFB-EAMs use the as-grown bandgap for optical gain and a 30 nm blue shifted bandgap  ...  Acknowledgments The authors would like to thank Anand Ramaswamy, Hui-Wen Chen, Molly Piels, Di Liang and Erica Lively for valuable discussions and help with device fabrication and testing.  ... 
doi:10.1364/oe.19.013692 pmid:21747525 fatcat:wthb3ie6p5ebdihlaipvhatniu

Quantum dot semiconductor optical amplifier/silicon external cavity laser for O-band high-speed optical communications

Shuyu Yang, Yi Zhang, Qi Li, Xiaoliang Zhu, Keren Bergman, Peter Magill, Thomas Baehr-Jones, Michael Hochberg
2015 Optical Engineering: The Journal of SPIE  
We report a hybrid integrated external cavity laser by butt coupling a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip.  ...  The device lasers at 1302 nm in the O-band, a wavelength regime critical to data communication systems. We measured 18 mW on-chip output power and over 50-dB side-mode suppression ratio.  ...  Acknowledgments The authors would like to thank Gernot Pomrenke of AFOSR for his support of the OpSIS effort. The authors  ... 
doi:10.1117/1.oe.54.2.026102 fatcat:yl6idmkqdjei5h2h7j2dqiijgm

III–V-on-Silicon Photonic Integrated Circuits for Spectroscopic Sensing in the 2–4 μm Wavelength Range

Ruijun Wang, Anton Vasiliev, Muhammad Muneeb, Aditya Malik, Stephan Sprengel, Gerhard Boehm, Markus-Christian Amann, Ieva Šimonytė, Augustinas Vizbaras, Kristijonas Vizbaras, Roel Baets, Gunther Roelkens
2017 Sensors  
Then a compact 2 µm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback is shown.  ...  The fourth section presents a compact 2 µm wavelength widely tunable external cavity laser using a silicon photonic IC for the wavelength selective feedback.  ...  Conflicts of Interest: The authors declare no conflict of interest.  ... 
doi:10.3390/s17081788 pmid:28777291 pmcid:PMC5579498 fatcat:pswjhmvzirblxhyqardr76sxnu

Electrically pumped hybrid AlGaInAs-silicon evanescent laser

Alexander W. Fang, Hyundai Park, Oded Cohen, Richard Jones, Mario J. Paniccia, John E. Bowers
2006 Optics Express  
Here we report an electrically pumped AlGaInAs-silicon evanescent laser architecture where the laser cavity is defined solely by the silicon waveguide and needs no critical alignment to the III-V active  ...  This laser runs continuous-wave (c.w.) with a threshold of 65 mA, a maximum output power of 1.8 mW with a differential quantum efficiency of 12.7 % and a maximum operating temperature of 40 °C.  ...  Such integrated cavities will remove the need to polish the laser facets and could allow for hundreds of small laser cavities with much lower threshold currents to be fabricated onto a silicon chip.  ... 
doi:10.1364/oe.14.009203 pmid:19529301 fatcat:nkhogqrc2jhxrnuma4o7o5heqa

Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser

Shahram Keyvaninia, Gunther Roelkens, Dries Van Thourhout, Christophe Jany, Marco Lamponi, Alban Le Liepvre, Francois Lelarge, Dalila Make, Guang-Hua Duan, Damien Bordel, Jean-Marc Fedeli
2013 Optics Express  
A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a silicon ring resonator for wavelength selection and two silicon Bragg grating reflectors as back and  ...  Single wavelength operation with a side mode suppression ratio higher than 45 dB is obtained. An output power up to 10 mW at 20 ⁰C and a thermooptic wavelength tuning range of 8 nm are achieved.  ...  The authors would like to thank Lemos Alvares Dos Santos and Saeed Tahvili from Eindhoven University of Technology for the assistance with the linewidth measurements.  ... 
doi:10.1364/oe.21.003784 pmid:23481834 fatcat:bnrq4resmbfifdhsgfducdv2rq
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