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Front Matter: Volume 10147

Andreas Erdmann, Jongwook Kye
<span title="2017-04-12">2017</span> <i title="SPIE"> Optical Microlithography XXX </i> &nbsp;
Publication of record for individual papers is online in the SPIE Digital Library. SPIEDigitalLibrary.org Paper Numbering: Proceedings of SPIE follow an e-First publication model.  ...  Utilization of CIDs allows articles to be fully citable as soon as they are published online, and connects the same identifier to all online and print versions of the publication.  ...  removal based on scanner leveling data 10147 0A Scanner-to-scanner CD analysis and control in an HVM environment 10147 0C 450mm lithography status for high volume manufacturing 3D RESIST EFFECTS  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1117/12.2277795">doi:10.1117/12.2277795</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/vlveqp77urcb3ipi6t3mgsflve">fatcat:vlveqp77urcb3ipi6t3mgsflve</a> </span>
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Design and CAD challenges in sub-90nm CMOS technologies

K. Bernstein, Ching-Te Chuang, R. Joshi, R. Puri
<span title="">2003</span> <i title="IEEE"> ICCAD-2003. International Conference on Computer Aided Design (IEEE Cat. No.03CH37486) </i> &nbsp;
in local self-heating of devices.  ...  The thermal conductivity of the SiGe layer is about 15X lower than that for Si, thus aggravating the self-heating effect [41] .  ...  Proper modeling and consideration of thermal resistance increase due to thermal coupling in multi-finger devices and in thin Si film are crucial for accurately predicting the self-heating effect.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/iccad.2003.159681">doi:10.1109/iccad.2003.159681</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/wrqhavxblrdqbghawgzt32lzam">fatcat:wrqhavxblrdqbghawgzt32lzam</a> </span>
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Modeling and Optimization of Fringe Capacitance of Nanoscale DGMOS Devices

A. Bansal, B.C. Paul, K. Roy
<span title="">2005</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/3cimua73vvedrg2nxgqfs4gbc4" style="color: black;">IEEE Transactions on Electron Devices</a> </i> &nbsp;
IG FinFET-TECHNOLOGY-BASED CIRCUIT SYNTHESIS METHODOLOGY In this section, we outline an efficient circuit synthesis methodology using the proposed modeling of the FinFET logic gates in sub-45-nm technology  ...  Abstract-In this paper, we propose a methodology to model and optimize FinFET devices for robust and low-power SRAMs.  ...  He studied the scaling properties of epitaxial Schottky barrier diodes, did pioneering work on the perimeter effects of advanced double-poly self-aligned bipolar transistors, and designed the first sub-nanosecond  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/ted.2004.842713">doi:10.1109/ted.2004.842713</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/ki5vlrqvczegnnbc6kuszrxzky">fatcat:ki5vlrqvczegnnbc6kuszrxzky</a> </span>
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Nano-CMOS Scaling Problems and Implications [chapter]

<span title="2005-03-24">2005</span> <i title="John Wiley &amp; Sons, Inc."> Nano-CMOS Circuit and Physical Design </i> &nbsp;
Proximity effects and STI stress mobility degradation will be difficult to model since they are very layout dependent [10, 11] .  ...  Other proximity effects include poly-CD variations due to photolithographic and etch proximity effects as a result of suboptimal layout styles due to etch microloading and optical proximity effects.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1002/0471653829.ch1">doi:10.1002/0471653829.ch1</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/t3fslb2prna2jk7kol2av3ubdy">fatcat:t3fslb2prna2jk7kol2av3ubdy</a> </span>
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Miniaturization of CMOS

Henry H. Radamson, Xiaobin He, Qingzhu Zhang, Jinbiao Liu, Hushan Cui, Jinjuan Xiang, Zhenzhen Kong, Wenjuan Xiong, Junjie Li, Jianfeng Gao, Hong Yang, Shihai Gu (+4 others)
<span title="2019-04-30">2019</span> <i title="MDPI AG"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/4clw6v34prcbvk2usotmbz6v3q" style="color: black;">Micromachines</a> </i> &nbsp;
The transistor structure has radically changed from its original planar 2D architecture to today's 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and  ...  When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized  ...  For advanced CMOS, the self-heating becomes a more serious matter and this has been widely studied [176] [177] [178] [179] .  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/mi10050293">doi:10.3390/mi10050293</a> <a target="_blank" rel="external noopener" href="https://www.ncbi.nlm.nih.gov/pubmed/31052223">pmid:31052223</a> <a target="_blank" rel="external noopener" href="https://pubmed.ncbi.nlm.nih.gov/PMC6563067/">pmcid:PMC6563067</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/5b2mryaaebhbbfvtu2vyzwwvr4">fatcat:5b2mryaaebhbbfvtu2vyzwwvr4</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20200214224838/https://res.mdpi.com/d_attachment/micromachines/micromachines-10-00293/article_deploy/micromachines-10-00293.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/8c/df/8cdf56e16ef8a33e9c89397e31c5a0aa8d80bb46.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/mi10050293"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="unlock alternate icon" style="background-color: #fb971f;"></i> mdpi.com </button> </a> <a target="_blank" rel="external noopener" href="https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6563067" title="pubmed link"> <button class="ui compact blue labeled icon button serp-button"> <i class="file alternate outline icon"></i> pubmed.gov </button> </a>

2020 Index IEEE Transactions on Nuclear Science Vol. 67

<span title="">2020</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/irkebyewo5dzlfovel4fhqmk34" style="color: black;">IEEE Transactions on Nuclear Science</a> </i> &nbsp;
., +, TNS May 2020 823-831 Analytical models A Special Total-Ionizing-Dose-Induced Short Channel Effect in Thin-Film PDSOI Technology: Phenomena, Analyses, and Models.  ...  ., +, TNS Jan. 2020 38-43 SE Response of Guard-Gate FF in 16-and 7-nm Bulk FinFET Technologies.  ...  Gamma-rays Simulation of High-Altitude Nuclear Electromagnetic Pulse Using a Modified Model of Scattered Gamma. 2474 -2480 Band Gap Variation and Trap Distribution in Transparent Garnet Scintillator  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/tns.2020.3048765">doi:10.1109/tns.2020.3048765</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/zgygdayuenh5nftvetqv3mfxle">fatcat:zgygdayuenh5nftvetqv3mfxle</a> </span>
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Smart E-Beam for Defect Identification & Analysis in the Nanoscale Technology Nodes: Technical Perspectives

Ankush Oberai, Jiann-Shiun Yuan
<span title="2017-10-20">2017</span> <i title="MDPI AG"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/ikdpfme5h5egvnwtvvtjrnntyy" style="color: black;">Electronics</a> </i> &nbsp;
As technology and market place raise the bar on chip density, Moore's law stretches to the limit.  ...  Such guided and focused inspection augments throughput, thereby positioning EBI as the industrial grade candidate in finer nanometer segment.  ...  But as the geometries shrink and industry is migrating to three-dimensional (3D) architectures (such as, NAND gate, Fin field-effect transistor (FinFETs), and advanced dynamic random access memories (DRAMs  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/electronics6040087">doi:10.3390/electronics6040087</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/6uytwvh37bchhmeskubhvrtxuu">fatcat:6uytwvh37bchhmeskubhvrtxuu</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20180727144343/https://res.mdpi.com/def50200ef35ea96995af2c8144a05509a8e97c282ea3788b78219af2dcfcc848df0ef367d164c88a9ba80a694a895236e2e844fb2c65c255febf0cf5e0bf11f30e585ef30d7ffb2cdce17de87c6d70046d170b8ef2d4c500f545f45b5cf00cdae2123ba11aad98bcdbf8a0ac795a280d52c56a8364d85eefb8d6b786522bcb26e3a1c04519647035a7c33096cbe2e98c4bb7c72c55ea92ebf876316b9ba10?filename=&amp;attachment=1" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/0c/41/0c4157f5f36ad512ede5cc429e9ed36b90b3ec6d.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/electronics6040087"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="unlock alternate icon" style="background-color: #fb971f;"></i> mdpi.com </button> </a>

Skybridge: 3-D Integrated Circuit Technology Alternative to CMOS [article]

Mostafizur Rahman, Santosh Khasanvis, Jiajun Shi, Mingyu Li, Csaba Andras Moritz
<span title="2014-04-02">2014</span> <i > arXiv </i> &nbsp; <span class="release-stage" >pre-print</span>
Migrating to 3-D, as a way to advance scaling, has eluded us due to inherent customization and manufacturing requirements in CMOS that are incompatible with 3-D organization.  ...  Continuous scaling of CMOS has been the major catalyst in miniaturization of integrated circuits (ICs) and crucial for global socio-economic progress.  ...  Acknowledgements This work was supported by the Center for Hierarchical Manufacturing (CHM, NSF DMI-0531171), and NSF (CCF-0508382) grants.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener" href="https://arxiv.org/abs/1404.0607v1">arXiv:1404.0607v1</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/do4ib2js3bamrk36534pfoiu3q">fatcat:do4ib2js3bamrk36534pfoiu3q</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20200929201358/https://arxiv.org/ftp/arxiv/papers/1404/1404.0607.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/ec/da/ecda25f911b319c550be653d64fb7539a8206404.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener" href="https://arxiv.org/abs/1404.0607v1" title="arxiv.org access"> <button class="ui compact blue labeled icon button serp-button"> <i class="file alternate outline icon"></i> arxiv.org </button> </a>

Edge Devices for Internet of Medical Things: Technologies, Techniques, and Implementation

Imed Ben Dhaou, Mousameh Ebrahimi, Meriam Ben Ammar, Ghada Bouattour, Olfa Kanoun
<span title="2021-08-31">2021</span> <i title="MDPI AG"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/ikdpfme5h5egvnwtvvtjrnntyy" style="color: black;">Electronics</a> </i> &nbsp;
This survey paper aims at providing an overview of technologies, techniques, and algorithms for wearable devices in the context of the Internet of Medical Things.  ...  In this context, wearable computing technologies are gaining importance as edge devices for the Internet of Medical Things.  ...  Innovation in sensor technology, and the low-power design of the integrated circuits for wearables from the system down to the layout should be considered.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/electronics10172104">doi:10.3390/electronics10172104</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/3wvfn7celff3bijjhdbuddae7m">fatcat:3wvfn7celff3bijjhdbuddae7m</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20210831102948/https://res.mdpi.com/d_attachment/electronics/electronics-10-02104/article_deploy/electronics-10-02104.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/1d/38/1d388b42ccfb0f569cea78864f82863da570eace.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.3390/electronics10172104"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="unlock alternate icon" style="background-color: #fb971f;"></i> mdpi.com </button> </a>

Stacked strained silicon transistors for low-power high-performance circuit applications

H. Ramakrishnan, S. Shedabale, G. Russell, A. Yakovlev
<span title="">2008</span> <i title="IEEE"> 2008 58th Electronic Components and Technology Conference </i> &nbsp;
Modelling (RSM).  ...  This thesis explores the applicability of this technology to low-power and high-speed digital and analogue designs by analyzing the power and performance characteristics of a range of circuits.  ...  Other sources of variations include position and proximity variations arising from the layout.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/ectc.2008.4550224">doi:10.1109/ectc.2008.4550224</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/ijp5zrokxbebrlv5w2b7ua2c44">fatcat:ijp5zrokxbebrlv5w2b7ua2c44</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20160401215709/http://async.org.uk/tech-reports/NCL-EECE-MSD-TR-2008-140.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/6e/40/6e4021d1ca17979ab3b3449990135397392da55c.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/ectc.2008.4550224"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> ieee.com </button> </a>

QUANTUM AND COULOMB EFFECTS IN NANODEVICES

D. VASILESKA, H. R. KHAN, S. S. AHMED, C. RINGHOFER, C. HEITZINGER
<span title="">2005</span> <i title="World Scientific Pub Co Pte Lt"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/aj22r3u64nfyhm4v7uci7mokeq" style="color: black;">International Journal of Nanoscience</a> </i> &nbsp;
In state of the art devices, it is well known that quantum and Coulomb effects play significant role on the device operation.  ...  In this paper we demonstrate that a novel effective potential approach in conjunction with a Monte Carlo device simulation scheme can accurately capture the quantummechanical size quantization effects.  ...  Acknowledgements We would like to thank the financial support from the Office of Naval Research under Contract # and of the National Science Foundation under Contract #  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1142/s0219581x05003164">doi:10.1142/s0219581x05003164</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/26niv473mrgsjmbzyzvn54cadu">fatcat:26niv473mrgsjmbzyzvn54cadu</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20100801141205/http://math.la.asu.edu/%7Echris/ijnanoscience050122.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/e3/11/e311d7c43aa32c4b7f1b72c4bca99f411e325167.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1142/s0219581x05003164"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> worldscientific.com </button> </a>

Quantum and Coulomb Effects in Nano Devices [chapter]

Dragica Vasileska, Hasanur Rahman Khan, Shaikh Shahid Ahmed, Gokula Kannan, Christian Ringhofer
<span title="">2011</span> <i title="Springer New York"> Nano-Electronic Devices </i> &nbsp;
In state of the art devices, it is well known that quantum and Coulomb effects play significant role on the device operation.  ...  In this paper we demonstrate that a novel effective potential approach in conjunction with a Monte Carlo device simulation scheme can accurately capture the quantummechanical size quantization effects.  ...  Acknowledgements We would like to thank the financial support from the Office of Naval Research under Contract # and of the National Science Foundation under Contract #  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1007/978-1-4419-8840-9_2">doi:10.1007/978-1-4419-8840-9_2</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/u6ha3ofhjvebnah7a4pa3yikim">fatcat:u6ha3ofhjvebnah7a4pa3yikim</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20100801141205/http://math.la.asu.edu/%7Echris/ijnanoscience050122.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/e3/11/e311d7c43aa32c4b7f1b72c4bca99f411e325167.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1007/978-1-4419-8840-9_2"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> springer.com </button> </a>

A Scalable Cryo-CMOS Controller for the Wideband Frequency-Multiplexed Control of Spin Qubits and Transmons

Jeroen Petrus Gerardus Van Dijk, Bishnu Patra, Sushil Subramanian, Xiao Xue, Nodar Samkharadze, Andrea Corna, Charles Jeon, Farhana Sheikh, Esdras Juarez-Hernandez, Brando Perez Esparza, Huzaifa Rampurawala, Brent R. Carlton (+12 others)
<span title="">2020</span> <i title="Institute of Electrical and Electronics Engineers (IEEE)"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/cz5rf4o3ezafnl4kjpq643g32e" style="color: black;">IEEE Journal of Solid-State Circuits</a> </i> &nbsp;
By operating the CMOS control circuits at cryogenic temperatures (cryo-CMOS), and hence in close proximity to the cryogenic solid-state qubits, a compact quantumcomputing system can be achieved, thus promising  ...  This work presents a cryo-CMOS microwave signal generator for frequency-multiplexed control of 4 × 32 qubits Manuscript  ...  the nominal is adopted, probably at the cost of , and (c) g m /I D ×IIP3 at 300 and 5 K for the adopted 22-nm FinFET CMOS technology.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1109/jssc.2020.3024678">doi:10.1109/jssc.2020.3024678</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/ul7hrya7hbfonjhtjkad3zv4me">fatcat:ul7hrya7hbfonjhtjkad3zv4me</a> </span>
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Applications: Nanoelectronics and Nanomagnetics [chapter]

Jeffrey Welser, Stuart A. Wolf, Phaedon Avouris, Tom Theis
<span title="">2011</span> <i title="Springer Netherlands"> Nanotechnology Research Directions for Societal Needs in 2020 </i> &nbsp;
All of these advances have resulted in an increased demand for near-atomic-level control for deposition, patterning, and characterization.  ...  It is ironic that in the past 10 years, nanoelectronics has arguably been the primary driver (both economically and technologically) for increasing our ability to control material at the nanoscale, but  ...  In the ten years since, the science and technology of the effect have advanced very rapidly.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1007/978-94-007-1168-6_9">doi:10.1007/978-94-007-1168-6_9</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/ipxmpvntubgfhm2q5mn7tsl6em">fatcat:ipxmpvntubgfhm2q5mn7tsl6em</a> </span>
<a target="_blank" rel="noopener" href="https://web.archive.org/web/20110521143735/http://wtec.org/nano2/Nanotechnology_Research_Directions_to_2020/chapter08.pdf" title="fulltext PDF download" data-goatcounter-click="serp-fulltext" data-goatcounter-title="serp-fulltext"> <button class="ui simple right pointing dropdown compact black labeled icon button serp-button"> <i class="icon ia-icon"></i> Web Archive [PDF] <div class="menu fulltext-thumbnail"> <img src="https://blobs.fatcat.wiki/thumbnail/pdf/a1/b6/a1b6162e9b8e6e4ce056dde20307ac022e6ba538.180px.jpg" alt="fulltext thumbnail" loading="lazy"> </div> </button> </a> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1007/978-94-007-1168-6_9"> <button class="ui left aligned compact blue labeled icon button serp-button"> <i class="external alternate icon"></i> springer.com </button> </a>

β-Gallium oxide power electronics

Andrew J. Green, James Speck, Grace Xing, Peter Moens, Fredrik Allerstam, Krister Gumaelius, Thomas Neyer, Andrea Arias-Purdue, Vivek Mehrotra, Akito Kuramata, Kohei Sasaki, Shinya Watanabe (+22 others)
<span title="2022-02-01">2022</span> <i title="AIP Publishing"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/spigwhpt4nfm5iefczg7bnycqa" style="color: black;">APL Materials</a> </i> &nbsp;
This Roadmap presents the current state-of-the-art and future challenges in 15 different topics identified by a large number of people active within the gallium oxide research community.  ...  Gallium Oxide has undergone rapid technological maturation over the last decade, pushing it to the forefront of ultra-wide band gap semiconductor technologies.  ...  Next, cooling strategies that locate heat spreaders and efficient conduction pathways in proximity to the device heat generation region will be key to realize an effective thermal management solution.  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="https://doi.org/10.1063/5.0060327">doi:10.1063/5.0060327</a> <a target="_blank" rel="external noopener" href="https://fatcat.wiki/release/5o63vyzrgjbr3o7dqbh6h3j6wu">fatcat:5o63vyzrgjbr3o7dqbh6h3j6wu</a> </span>
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