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A new trench electrode IGBT having superior electrical characteristics for power IC systems

Ey Goo Kang, Seung Hyun Moon, Man Young Sung
2001 Microelectronics Journal  
A new small-size Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) is proposed to improve the characteristics of other devices.  ...  Since the electrodes of the proposed device are of a trench type, the electric ®eld accumulates in the trench oxide of the device. Thus, the punch-through breakdown of LTEIGBT occurs.  ...  Recently, a Lateral Trench-gate IGBT (LTIGBT) with improved latch-up characteristics was proposed.  ... 
doi:10.1016/s0026-2692(01)00045-3 fatcat:3e6gmcwvvbcttfa65ywcvdjtn4

A new Lateral Trench Electrode IGBT with a p+ diverter

M. Y. Sung, E. G. Kang
2003 Microsystem Technologies : Micro- and Nanosystems Information Storage and Processing Systems  
A new Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) with a p+ diverter was proposed and fabricated to improve the electrical characteristics of the conventional LTIGBT.  ...  Therefore, the proposed LTEIGBT with a p+ diverter is an effective device for smart power IC.  ...  The proposed LTIGBT with p+ diverter well may be used for smart power IC without suffering from latch up.  ... 
doi:10.1007/s00542-003-0306-y fatcat:abrebkyb2rho5p67yirsn4oumi

A Review of techniques used in Lateral Insulated Gate Bipolar Transistor (LIGBT)

Elizabeth Kho Ching Tee
2012 IOSR Journal of Electrical and Electronics Engineering  
The huge demand for high voltage, high current power devices on Silicon on Chip (SoC) has led to the development of Lateral Insulated Gate Bipolar Transistor (Lateral IGBT/ LIGBT), touted as the best candidate  ...  on their device mechanisms, such as reverse conducting, trench gate and super junction.  ...  RBSOA is limited by avalanche breakdown and dynamic latch up.  ... 
doi:10.9790/1676-0313552 fatcat:ab2peihfsrfkxjomjwdkmahthu

Switching Megawatts with Power Transistors

K. Shenai
2013 The Electrochemical Society Interface  
and wind generators. 5 At the same time, alternative and more efficient methods of electricity delivery such as direct DC are under development and have the potential for rapid penetration of renewable  ...  energized from the power source using a controllable 3-terminal power switch.  ...  Further improvement in electrical conductivity for a given die size is achieved by using trench-gate power MOSFETs and super-junction power MOSFETs.  ... 
doi:10.1149/2.f05131if fatcat:y7xc6iku2vdflnsei4iretiwsy

A Smart IGBT Gate Driver IC with Temperature Compensated Collector Current Sensing

Jingxuan Chen, Wei Jia Zhang, Andrew Shorten, Jingshu Yu, Masahiro Sasaki, T. Kawashima, Haruhiko Nishio, Wai Tung Ng
2018 IEEE transactions on power electronics  
Precision current measurement is a critical function that must be incorporated into modern high voltage and high current power systems.  ...  My research background was focused on power device modeling and fabrication for my M.A.SC degree. However, I decided to endeavor to the power circuit and power IC design area for my PhD research.  ...  The emitter current of the IGBT, I E can be obtained by adding up the electron and hole currents as(a) Cross section of a typical trench gate field-stop IGBT, (b) a simplified IGBT model, (c) typical IGBT  ... 
doi:10.1109/tpel.2018.2865788 fatcat:gadghppig5h25kxe3hvobjorwm

Recent trends in silicon carbide device research

Munish Vashishath
2008 Maejo International Journal of Science and Technology  
It is a wide band gap semiconductor with an energy gap wider than 2eV and possesses extremely high power, high voltage switching characteristics and high thermal, chemical and mechanical stability.  ...  In this paper, silicon carbide Schottky barrier diodes, power MOSFETs, UMOSFET, lateral power MOSFET, SIT (static induction transistor), and nonvolatile memories are discussed along with their characteristics  ...  Since the introduction of the first power MOSFETs, Si power MOSFETs have been immensely improved and have become the dominant device technology since 1980s for many applications for many reasons.  ... 
doaj:b4df4048a4604444812004218b43c7a2 fatcat:kroai575wjdcbdwcahxafhmmcy

2013 Index IEEE Transactions on Electron Devices Vol. 60

2013 IEEE Transactions on Electron Devices  
Departments and other items may also be covered if they have been judged to have archival value. The Author Index contains the primary entry for each item, listed under the first author's name.  ...  The primary entry includes the coauthors' names, the title of the paper or other item, and its location, specified by the publication abbreviation, year, month, and inclusive pagination.  ...  Sharma, D., +, TED Dec. 2013 4206-4212 Die-Level 3-D Integration Technology for Rapid Prototyping of High-Performance Multifunctionality Hetero-Integrated Systems.  ... 
doi:10.1109/ted.2013.2291536 fatcat:ov6jcpfqwjfffd34ftqwfx6jia

Fabrication and electrical characterization of ultra-thin substrate IGBT [article]

Jajnabalkya Guhathakurta, Universität Stuttgart, Universität Stuttgart
Amongst the power devices in today's market, IGBTs have gained a lot of significance in this field over its competitors like Power MOSFETS and Thyristors.  ...  The device with such dimension and structure was initially simulated by the device simulator ATLAS from Silvaco to verify the working of the device and to have a general idea of what kind of a characteristics  ...  The constant search for the 'Perfect Switch', drives and promotes the research for novel device structure, as they have a high impact on the size, cost and efficiency of power electronic systems.  ... 
doi:10.18419/opus-3591 fatcat:eo4bq6zw35gebfze5wpnmv7dlu

High Efficiency IGBTs through Novel Three-Dimensional Modelling and New Architectures

Emma Mae Findlay, Apollo-University Of Cambridge Repository, Apollo-University Of Cambridge Repository, Florin Udrea
The RC-IGBT designs that have currently been proposed in literature, either present a trade-off in performance, an inability to be manufactured, or a requirement for a custom gate drive.  ...  The concept and proposed manufacturing method enables, for the first time, a full SuperJunction structure to be achieved in a 1.2kV [...]  ...  As expected, the superjunction RC-IGBT offers improved breakdown capabilities for a given drift length compared to the standard IGBT, and also a small improvement over a traditional RC-IGBT.  ... 
doi:10.17863/cam.51957 fatcat:i3eqht2s55f3beb2pz3egj26te


Paula Reigosa, Paula Reigosa, Francesco Iannuzzo, Frede Blaabjerg, Caroline Andersson
2017 unpublished
This means that the IGBT is one of the most critical components of the whole power system and for this reason many efforts have been devoted to improve its reliability including robustness.  ...  . Latch-up One of the most problematic instabilities of the IGBT since its initial release is the latch-up.  ... 

Composite power semiconductor switches for high-power applications [article]

Ross Ellis Mathieson, University Of Edinburgh, Stephen Finney, Michael Merlin
The requirements for these power semiconductor switches are vast, and include: having an extremely low level of conduction and switching losses; being a low source of electromagnetic noise, and not being  ...  At the heart of a power electronic converter is the power semiconductor switch which is responsible for controlling and modulating the flow of power from the input to the output.  ...  These merits, coupled with improved latch-up characteristics, result in the PT being superior in performance [36] .  ... 
doi:10.7488/era/1608 fatcat:blwhddm74vcojgf4em4xugguuy

Investigation of FACTS devices to improve power quality in distribution networks

Muhammad Asim Rehman Shaikh, Tim C. Green, Paul D. Mitcheson, Commonwealth Scholarship Commission
Flexible AC transmission system (FACTS) technologies are power electronic solutions that improve power transmission through enhanced power transfer volume and stability, and resolve quality and reliability  ...  For minority carrier devices (such as a pin diode or IGBT), a similar relationship is observed for varying current, however where the blocking voltage is altered, power losses are derived as a square root  ...  The Trench gate improves the resistance for the MOS current path by replacing the DMOS structure with a UMOS structure in the IGBT.  ... 
doi:10.25560/6197 fatcat:ypq3ce4ebnaene3lljvqv5xg4y

Samuel Vasconcelos Araújo On the Perspectives of Wide-Band Gap Power Devices in Electronic-Based Power Conversion for Renewable Systems 3 Elektrische Energiesysteme Elektrische Energiesysteme Band 3 Herausgegeben von Kompetenzzentrum für Dezentrale Elektrische Energieversorgungstechnik On the Perspectives of Wide-Band Gap Power Devices in Electronic-Based Power Conversion for Renewable Systems

Samuel Araújo, Fachgebiet Energieversorgungssysteme, Samuel Araújo
The development of MOSFETs and later IGBTs provided a further step in the direction towards higher frequency and power levels.  ...  Suitable concepts for SiC and GaN range from traditional FET structures driven by a MOS interface or a PN-Junction, bipolar devices and even high-electron mobility transistors (HEMT).  ...  For such purpose, tests with a SiC-MOSFET and a 2nd generation Trench IGBT were initially performed in a switching cell.  ... 

Vice President in Research of Maejo University MAEJO INTERNATIONAL JOURNAL OF SCIENCE AND TECHNOLOGY The International Journal for the Rapid Publication of Preliminary Communications in

James Maxwell, Morakot Sukchotiratana, Jirawan Banditpuritat, E Dallas, Alston, Pei-Yi Chu, Changhua, Christian Hospital, Taiwan Asst, Chukeatirote, L Richard, Deming (+24 others)
Journal Information Maejo International Journal of Science and Technology   unpublished
Intended as a medium for communication, discussion, and rapid dissemination of important issues in Science and Technology, articles are initially published online in an open access format, thereby giving  ...  authors the chance to communicate with a wide range of readers in an international community.  ...  Acknowledgement This study was supported by a grant from "Establishment of Feeding Standard of Beef Cattle and Feedstuff Database for Indochinese peninsula research fund" of Japan International Research  ... 

Robotic isotropy and optimal robot design of planar manipulators

M.V. Kircanski
Proceedings of the 1994 IEEE International Conference on Robotics and Automation  
Devices Construction, ratings, characteristics: -(including SOA Rating) Power transistors, SCR, TRIAC, GTO -SCR, IGBT, MCT.  ...  of a power system.  ...  About 50 problems are to be solved Process control in Spinning: Steps involved in the evolution of a system for process control in spinning.  ... 
doi:10.1109/robot.1994.351213 dblp:conf/icra/Kircanski94 fatcat:uawqnzropbgivcanzqihtimt2m