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An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor

Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, Shigetoshi Sugawa
2020 IEEE Transactions on Electron Devices  
This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4  ...  Index Terms-CMOS image sensor (CIS), lateral overflow integration capacitor (LOFIC), signal-to-noise ratio (SNR), wide dynamic range (WDR).  ...  Recently, an over 120-dB DR CIS introducing a 1.6 pF lateral overflow integration trench capacitor (LOFITreC) to improve both maximum SNR and SNR at signal switching point was reported [26] .  ... 
doi:10.1109/ted.2020.3038621 fatcat:dcef3itulvhcxam5mxuoib27ve

A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside-Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank

Hiroya Shike, Rihito Kuroda, Ryota Kobayashi, Maasa Murata, Yasuyuki Fujihara, Manabu Suzuki, Shoma Harada, Taku Shibaguchi, Naoya Kuriyama, Takaki Hatsui, Jun Miyawaki, Tetsuo Harada (+4 others)
2021 IEEE Transactions on Electron Devices  
This article presents a prototype 22.4 µm pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS).  ...  Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bank with high-density Si trench capacitors were introduced for WDR and for GS.  ...  Index Terms-Backside-illuminated (BSI), CMOS image sensor (CIS), coherent X-ray diffraction imaging (CDI), global shutter (GS), lateral overflow integration capacitor (LOFIC), soft X-ray, wide dynamic  ... 
doi:10.1109/ted.2021.3062576 fatcat:isbgdbgjyfczbgdaqoyjtpgbp4

Wide-dynamic-range sensors

Orly Yadid-Pecht
1999 Optical Engineering: The Journal of SPIE  
The work done to provide image sensors (CCDs and CMOS) with a wide dynamic range is reviewed.  ...  Active pixel sensors with a wide dynamic range are analyzed and possible future directions are pointed out. © 1999 Society of Photo-Optical Instrumentation Engineers.  ...  Tsutomo Nakamura for making Olympus pictures available and to Dr. Jurgen Huppertz for making IMS pictures available for this manuscript.  ... 
doi:10.1117/1.602253 fatcat:nxfc5b75yrhhhp75wuangmoe6a

HDR CMOS Image Sensors for Automotive Applications

Isao Takayanagi, Rihito Kuroda
2022 IEEE Transactions on Electron Devices  
Because of various purposes and high dynamic range (HDR) of brightness of objects in automotive applications, HDR image capture is a primary requirement.  ...  In this article, HDR CMOS image sensor (CIS) technology and its automotive applications are discussed including application requirements, basic HDR approaches and trends of HDR CMOS image sensor technologies  ...  Junichi Nakamura for his kind discussion and feedback on the basis of CMOS image sensor technologies.  ... 
doi:10.1109/ted.2022.3164370 fatcat:olq5nxylc5cjno4vu5hcjly444

A 120-ke− Full-Well Capacity 160-µV/e− Conversion Gain 2.8-µm Backside-Illuminated Pixel with a Lateral Overflow Integration Capacitor

Isao Takayanagi, Ken Miyauchi, Shunsuke Okura, Kazuya Mori, Junichi Nakamura, Shigetoshi Sugawa
2019 Sensors  
In this paper, a prototype complementary metal-oxide-semiconductor (CMOS) image sensor with a 2.8-μm backside-illuminated (BSI) pixel with a lateral overflow integration capacitor (LOFIC) architecture  ...  This 2.8-μm pixel is potentially capable of higher than 100 dB dynamic range imaging in a pure single exposure operation.  ...  Acknowledgments: The authors gratefully acknowledge the handle by Yutaka Sato in acquiring the HDR images. Conflicts of Interest: The authors declare no conflict of interest.  ... 
doi:10.3390/s19245572 fatcat:kmm4sdmq7jd27giyf6vhwr7atu

A 750 K Photocharge Linear Full Well in a 3.2 μm HDR Pixel with Complementary Carrier Collection

Frédéric Lalanne, Pierre Malinge, Didier Hérault, Clémence Jamin-Mornet, Nicolas Virollet
2018 Sensors  
Mainly driven by automotive applications, there is an increasing interest in image sensors combining a high dynamic range (HDR) and immunity to the flicker issue.  ...  The hole-based image reaches 750 kh+ linear storage capability thanks to a 73 fF CDTI capacitor.  ...  Conflicts of Interest: The authors declare no conflict of interest.  ... 
doi:10.3390/s18010305 pmid:29361702 pmcid:PMC5795888 fatcat:gugbsdrbkvegvaurkkmrldadka

Realization and opto-electronic Characterization of linear Self-Reset Pixel Cells for a high dynamic CMOS Image Sensor

Stefan Hirsch, Markus Strobel, Wolfram Klingler, Jan Dirk Schulze Spüntrup, Zili Yu, Joachim N. Burghartz
2019 Advances in Radio Science  
</strong> Conventional CMOS image sensors with a linear transfer characteristic only have a limited dynamic range (DR) of about 60–70&amp;thinsp;dB.  ...  Thus we achieved pixels with a DR of more than 120&amp;thinsp;dB combined with an improved low light sensitivity using a pinned photodiode.  ...  Conventional CMOS image sensors with a linear transfer characteristic only have a limited dynamic range (DR) of about 60-70 dB.  ... 
doi:10.5194/ars-17-239-2019 fatcat:lmw2pr5yl5gqre3uh6dwlqonou

[Paper] A CMOS Image Sensor with 240 μV/e– Conversion Gain, 200 ke– Full Well Capacity, 190-1000 nm Spectral Response and High Robustness to UV light

Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa
2016 ITE Transactions on Media Technology and Applications  
A CMOS image sensor using a 0.18 µm CMOS process technology achieved a high CG of 240 µV/e -, a high FWC of 200 ke -, a wide spectral response for 190-1000 nm and a high robustness to deuterium lamp irradiation  ...  The structure and performances of a CMOS image sensor fabricated by integrating technologies in a series of process flow that achieve wide spectral response, high robustness to ultraviolet (UV) light,  ...  A lateral overflow integration capacitor (LOFIC) CMOS image sensor is one of its solutions 23)24) .  ... 
doi:10.3169/mta.4.116 fatcat:pp6gusjfm5ctferdivmir27x4u

A new two-step ΣΔ architecture column-parallel ADC for CMOS image sensor

Pierre Bisiaux, Caroline Lelandais-Perrault, Anthony Kolar, Philippe Benabes, Filipe Vinci Dos Santos
2016 2016 29th Symposium on Integrated Circuits and Systems Design (SBCCI)  
The demand for high resolution CMOS image sensors (CIS) is rising. Analog-to-digital converters (ADC) represent one of the major bottleneck of CIS.  ...  This work achieves a SNDR of 89 dB when a full scale sinusoid of 100 kHz is applied.  ...  Moreover, greater pixel sensitivity and dynamic range demand 12-bits or higher resolution conversion.  ... 
doi:10.1109/sbcci.2016.7724065 dblp:conf/sbcci/BisiauxLKBS16 fatcat:qyse3rctsnd27jteuuft33koyu

Smear reduction in the interline CCD image sensor

N. Teranishi, Y. Ishihara
1987 IEEE Transactions on Electron Devices  
possible (see later discussion on CMOS image sensors) • The signal charge packet is transferred to a floating diffusion node (a pn-junction capacitor) • Timing sequence: • Floating diffusion node is reset  ...  high light intensity • There are two anti-blooming methods • Lateral overflow drain (LOD) • Vertical overflow drain (VOD) • Both methods work for CCD as well as CMOS image sensors • Vertical overflow  ...  Teranishi, IEDM 1982) to solve image lag problem in IT-CCD • Concept applied to CMOS image sensor (R. Guidash, IEDM 1997) • Recent advances (I.  ... 
doi:10.1109/t-ed.1987.23043 fatcat:nhctx2s3infazpcswq352whkqm

An Optical Filter-Less CMOS Image Sensor with Differential Spectral Response Pixels for Simultaneous UV-Selective and Visible Imaging

Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Shigetoshi Sugawa
2019 Sensors  
Also, to achieve high conversion gain and wide dynamic range simultaneously, the lateral overflow integration capacitor (LOFIC) technology was introduced in both pixel types.  ...  This paper presents a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) capable of capturing UV-selective and visible light images simultaneously by a single exposure and without employing  ...  Conflicts of Interest: The authors declare no conflict of interest.  ... 
doi:10.3390/s20010013 pmid:31861428 pmcid:PMC6983105 fatcat:27rkwerh4fhylpk7vkqwcp2bb4

A biomorphic digital image sensor

E. Culurciello, R. Etienne-Cummings, K.A. Boahen
2003 IEEE Journal of Solid-State Circuits  
An arbitrated address-event imager has been designed and fabricated in a 0.6-m CMOS process. The imager is composed of 80 60 pixels of 32 30 m.  ...  Tests conducted on the imager showed a large output dynamic range of 180 dB (under bright local illumination) for an individual pixel.  ...  Wilson, A. van Schaik, A. Andreou, and P. Poliquen for their insights, fruitful discussions, and support.  ... 
doi:10.1109/jssc.2002.807412 fatcat:xzukeldgqnejji2v4xtwsytbom

Si image sensors with wide spectral response and high robustness to ultraviolet light exposure

Rihito Kuroda, Shigetoshi Sugawa
2014 IEICE Electronics Express  
The developed technology is applied to in-pixel buried PDs of photodiode arrays and a CMOS image sensor. The advanced performances of fabricated sensors are verified with experimental results.  ...  Si image sensors with a wide spectral response range and a high robustness to ultraviolet light exposure based on flattened Si surface are described in this paper.  ...  Authors would like to acknowledge Shimadzu Corp. and LAPIS Semiconductor Miyagi Co., Ltd. for their cooperation.  ... 
doi:10.1587/elex.11.20142004 fatcat:5fr56faoqbcvlcq2aecwuc2m4i

A 0.13 μm CMOS System-on-Chip for a 512 × 424 Time-of-Flight Image Sensor With Multi-Frequency Photo-Demodulation up to 130 MHz and 2 GS/s ADC

Cyrus S. Bamji, Patrick O'Connor, Tamer Elkhatib, Swati Mehta, Barry Thompson, Lawrence A. Prather, Dane Snow, Onur Can Akkaya, Andy Daniel, Andrew D. Payne, Travis Perry, Mike Fenton (+1 others)
2015 IEEE Journal of Solid-State Circuits  
We introduce a 512 × 424 time-of-flight (TOF) depth image sensor designed in a TSMC 0.13 μm LP 1P5M CMOS process, suitable for use in Microsoft Kinect for XBOX ONE.  ...  The reported experimental results demonstrate a wide depth range of operation (0.8-4.2 m), small accuracy error ( 1%), very low depth uncertainty ( 0.5% of actual distance), and very high dynamic range  ...  for low light conditions and a dynamic range of 75 dB.  ... 
doi:10.1109/jssc.2014.2364270 fatcat:qqdfyj2ssvhntp3ekkctij2v3m

[Paper] A Highly Ultraviolet Light Sensitive and Highly Robust Image Sensor Technology Based on Flattened Si Surface

Rihito Kuroda, Shun Kawada, Satoshi Nasuno, Taiki Nakazawa, Yasumasa Koda, Katsuhiko Hanzawa, Shigetoshi Sugawa
2014 ITE Transactions on Media Technology and Applications  
A wide dynamic range and high sensitivity linear response imaging is achieved with a single exposure by CMOS image sensor with LOFIC 14) 15) .  ...  The lateral overflow integration capacitor (LOFIC) pixel architecture was employed for a high conversion gain (CG) and a high full well capacity (FWC) performance 14) 15) .  ... 
doi:10.3169/mta.2.123 fatcat:gcrhlqibdzezhdky5u5kulcw6i
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