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Technology and Modeling of Nonclassical Transistor Devices
2019
Journal of Electrical and Computer Engineering
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In view of that, compact modeling of bulk CMOS transistors and multiple-gate transistors are considered as well as BSIM and PSP multiple-gate models, FD-SOI MOSFETs, CNTFET, and SET modeling are reviewed ...
This paper presents a comprehensive outlook for the current technology status and the prospective upcoming advancements. ...
A couple of models consider the case of asymmetric doped double-gate MOSFETs numerically. ese include Ortiz-Conde et al. ...
doi:10.1155/2019/4792461
fatcat:zhq6ufe4ojh6dagpkt7jfgx5xu
Compact Modeling of Experimental n- and p-Channel FinFETs
2010
IEEE Transactions on Electron Devices
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II.A Analytic Potential Model for Double-Gate MOSFETs For an undoped or lightly doped silicon film as shown in Fig. ...
levels of a DG MOSFET due to quantum mechanical confinement. ...
doi:10.1109/ted.2010.2047067
fatcat:rdcocj2hfzh27ozvivb2jdjcwi
QUANTUM AND COULOMB EFFECTS IN NANODEVICES
2005
International Journal of Nanoscience
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In state of the art devices, it is well known that quantum and Coulomb effects play significant role on the device operation. ...
We also demonstrate, via proper treatment of the short-range Coulomb interactions, that there will be significant variation in device design parameters for devices fabricated on the same chip due to the ...
Acknowledgements We would like to thank the financial support from the Office of Naval Research under Contract # and of the National Science Foundation under Contract # ...
doi:10.1142/s0219581x05003164
fatcat:26niv473mrgsjmbzyzvn54cadu
Quantum and Coulomb Effects in Nano Devices
[chapter]
2011
Nano-Electronic Devices
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In state of the art devices, it is well known that quantum and Coulomb effects play significant role on the device operation. ...
We also demonstrate, via proper treatment of the short-range Coulomb interactions, that there will be significant variation in device design parameters for devices fabricated on the same chip due to the ...
Acknowledgements We would like to thank the financial support from the Office of Naval Research under Contract # and of the National Science Foundation under Contract # ...
doi:10.1007/978-1-4419-8840-9_2
fatcat:u6ha3ofhjvebnah7a4pa3yikim
Beyond the conventional transistor
2002
IBM Journal of Research and Development
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These options include high-dielectric-constant (high-k) gate dielectric, metal gate electrode, double-gate FET, and strained-silicon FET. ...
Starting from an analysis of the sources of improvements in device performance, we present technology options for achieving these performance enhancements. ...
The gradient is an analytic Gaussian profile with a lateral x ϭ 2, 4, 6 nm. ...
doi:10.1147/rd.462.0133
fatcat:zwt2evpshjejlg7ulv5kvpl5za
Beyond the conventional transistor
2005
Solid-State Electronics
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These options include high-dielectric-constant (high-k) gate dielectric, metal gate electrode, double-gate FET, and strained-silicon FET. ...
Starting from an analysis of the sources of improvements in device performance, we present technology options for achieving these performance enhancements. ...
The gradient is an analytic Gaussian profile with a lateral x ϭ 2, 4, 6 nm. ...
doi:10.1016/j.sse.2004.10.014
fatcat:5lwilesg6vc5bmm6bdj3mh4m6u
Silicon quantum electronics
2013
Reviews of Modern Physics
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These advances underline the significant progress towards the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics. ...
Recent critical steps include the isolation of single electrons, the observation of spin blockade and single-shot read-out of individual electron spins in both dopants and gated quantum dots in Si. ...
1 We refer to other review articles on quantum dots and singleelectron transistors for more background and details: Beenakker and van Houten (1991) , Grabert, Devoret, and Kastner (1993) , Kouwenhoven ...
doi:10.1103/revmodphys.85.961
fatcat:5pynz4ejbbhbtd4o573xmn3gce
The International Conference on Theoretical Physics `Dubna-Nano2008'
2008
Journal of Physics, Conference Series
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The phase dynamics of the coupled Josephson junctions in the framework of CCJJ [1] and CCJJ+DC [2,3] models is studied. ...
The current voltage characteristics (CVC) are numerically calculated for the stacks with different number of junctions at different model parameters. ...
In this work we choose to substitute the realistic confinement potential for a square patterned quantum dot with an approximated circular symmetric potential. ...
doi:10.1088/1742-6596/129/1/011001
fatcat:n2ywxfc2wbbtvofiodjxe3b7eq
International Conference on Theoretical Physics Dubna-Nano 2010
2010
Journal of Physics, Conference Series
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The phase dynamics of the coupled Josephson junctions in the framework of CCJJ [1] and CCJJ+DC [2,3] models is studied. ...
The current voltage characteristics (CVC) are numerically calculated for the stacks with different number of junctions at different model parameters. ...
In this work we choose to substitute the realistic confinement potential for a square patterned quantum dot with an approximated circular symmetric potential. ...
doi:10.1088/1742-6596/248/1/011001
fatcat:2kevj3aiozf3bcxbtxvkwn26mm
International Conference on Theoretical Physics: Dubna-Nano 2012
2012
Journal of Physics, Conference Series
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The phase dynamics of the coupled Josephson junctions in the framework of CCJJ [1] and CCJJ+DC [2,3] models is studied. ...
The current voltage characteristics (CVC) are numerically calculated for the stacks with different number of junctions at different model parameters. ...
In this work we choose to substitute the realistic confinement potential for a square patterned quantum dot with an approximated circular symmetric potential. ...
doi:10.1088/1742-6596/393/1/011001
fatcat:2gnbdziuxze5fb75cnt7lyxezq
Silicon spintronics: Progress and challenges
2015
Physics reports
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Designs of spin-based non-volatile MRAM cells are presented. By means of micromagnetic simulations it is demonstrated that a substantial reduction of the switching time can be achieved. ...
Finally, it is shown that any two arbitrary memory cells from an MRAM array can be used to perform a logic operation. Thus, an intrinsic non-volatile logic-in-memory architecture can be realized. ...
The first demonstration of coherent spin transport through an undoped 350 µm thick silicon wafer [41] has triggered a systematic study of spin transport properties in silicon [21] . ...
doi:10.1016/j.physrep.2015.05.002
fatcat:fhw5kpl4bvbkthbspu7f46m2sa
Electronic transport in two-dimensional graphene
2011
Reviews of Modern Physics
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Experiment and theory as well as quantum and semi-classical transport are discussed in a synergistic manner in order to provide a unified and comprehensive perspective. ...
We provide a broad review of fundamental electronic properties of two-dimensional graphene with the emphasis on density and temperature dependent carrier transport in doped or gated graphene structures ...
The carrier dispersion of 2D semiconductors is given by EðqÞ ¼ E 0 þ ℏ 2 q 2 =ð2m à Þ, where E 0 is the quantum confinement energy of the lowest quantum confined 2D state, and q ¼ ðq x ; q y Þ is the 2D ...
doi:10.1103/revmodphys.83.407
fatcat:5gjlvwheyzaurd52lrbvzidd3m
Quantum Transport in Semiconductor Nanostructures
[chapter]
1991
Solid state physics (New York. 1955)
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Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically ...
Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling). IV. ...
FIG. 75 75 Schematic cross sectional (a) and top (b) view of a double-gate Si MOSFET device. ...
doi:10.1016/s0081-1947(08)60091-0
fatcat:n5si3es6xzcipl7oy5dfwuc5dm
Realization of organic pn-homojunction using a novel n-type doping technique
2004
Organic Optoelectronics and Photonics
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We observe stable and reproducible diode characteristics, which can be described by the standard Shockley theory with an exception concerning the temperature dependence of the diode parameters. ...
In this thesis, we study the physical properties of doped organic semiconductors. We first demonstrate the impact of doping on C 60 films. ...
I also thank him for insightful discussions and proof-reading of the ...
doi:10.1117/12.546723
fatcat:zkm3h5dm3jdavlrbhehjfkj5kq
Semiconductor Spin Qubits
[article]
2021
arXiv
pre-print
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We next give a comprehensive overview of the physics of exchange interactions, a crucial resource for single- and two-qubit control in spin qubits. ...
The spin degree of freedom of an electron or a nucleus is one of the most basic properties of nature and functions as an excellent qubit, as it provides a natural two-level system that is insensitive to ...
GB also acknowledges funding from the European Union under Grant Agreement No. 951852 (Quantum Technology Flagship / QLSI) and German Research Foundation (Deutsche Forschungsgemeinschaft, DFG) under project ...
arXiv:2112.08863v1
fatcat:ct6zj4iah5ca7cwtwvelfchrgm
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