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A New CDS Structure for High Density FPA with Low Power

Xiao Wang, Zelin Shi
2015 VLSI design (Print)  
To adapt applications for focal planes of large format and high density, a new structure of CDS circuit occupying small layout area is proposed, whose power dissipation has been optimized by using MOSFETs  ...  The total noise of long wave is smaller than medium wave, both of which increase with the integration capacitor and integration time increasing.  ...  Acknowledgment The authors thank the Key Laboratory of Opto-Electronic Information Processing for the continuous supporting of the research on noise of readout integrated circuits.  ... 
doi:10.1155/2015/767161 fatcat:geotdr3xcjdrxk2a56v2skei5q

A new cryogenic CMOS readout structure for infrared focal plane array

Chih-Cheng Hsieh, Chung-Yu Wu, Tai-Ping Sun
1997 IEEE Journal of Solid-State Circuits  
A new current readout structure for the infrared (IR) focal-plane-array (FPA), called the switch-current integration (SCI) structure, is presented in this paper.  ...  By applying the share-buffered direct-injection (SBDI) biasing technique and off focal-plane-array (off-FPA) integration capacitor structure, a high-performance readout interface circuit for the IR FPA  ...  ACKNOWLEDGMENT The authors would like to thank the Chung Shang Institute of Science and Technology and the Chip Implementation Center of the National Science Council for their valuable discussions, suggestions  ... 
doi:10.1109/4.604075 fatcat:i5xsewb2rrg5jflbynjr4ujule

Focal-plane-arrays and CMOS readout techniques of infrared imaging systems

Chih-Cheng Hsieh, Chung-Yu Wu, Far-Wen Jih, Tai-Ping Sun
1997 IEEE transactions on circuits and systems for video technology (Print)  
A discussion of CMOS readout technologies for infrared (IR) imaging systems is presented. First, the description of various types of IR detector materials and structures is given.  ...  To support a good interface between FPA and downstream signal processing stage, both conventional and recently developed CMOS readout techniques are presented and discussed.  ...  ACKNOWLEDGMENT The authors would like to thank their colleagues at the Chung Shang Institute of Science and Technology and the Chip Implementation Center of the National Science Council for their valuable  ... 
doi:10.1109/76.611171 fatcat:ot3thm4g2zdpzdeea4yaeabhs4

Advances in Infrared Detector Array Technology [chapter]

Nibir K., Ravi Dat, Ashok K.
2013 Optoelectronics - Advanced Materials and Devices  
performance and low cost products in a wide range of applications.  ...  Consequently, SWIR, and to a lesser extent NIR, systems are tolerant of low levels of obscurants like fog and smoke compared to visible light.  ...  The authors gratefully acknowledge the contributions of the many performers on the DAR-PA-AWARE program who have provided the results described in this manuscript and have been essential in advancing new  ... 
doi:10.5772/51665 fatcat:zvlnlj2znzauzk7luis43bm73q

Advanced HgCdTe technologies and dual-band developments

Philippe Tribolet, Gérard Destefanis, Philippe Ballet, Jacques Baylet, Olivier Gravrand, Johan Rothman, Bjørn F. Andresen, Gabor F. Fulop, Paul R. Norton
2008 Infrared Technology and Applications XXXIV  
Future improvements including avalanche photodiodes (APD), will lead to more compact systems as well as a low cost approach.  ...  These new advanced HgCdTe technologies necessary for third generation developments have been validated and their producibility have been improved.  ...  The authors thank the French MoD for its support of CEA-Leti (LIR) and SOFRADIR technology including the third generation demonstrations.  ... 
doi:10.1117/12.779902 fatcat:pn2sr343ebho3g4pcp3roklpn4

New design techniques for a complementary metal-oxide semiconductor current readout integrated circuit for infrared detector arrays

Chung-Yu Wu
1995 Optical Engineering: The Journal of SPIE  
Jn Sec. 2, the circuit structure of the new SBDJ readout input stage is described and comparisons with DJ and BDI  ...  But the SBDJ has less chip area and power dissipation than the BDJ. Thus the SBDJ is suitable for the large and high performance 2-D JR detector array.  ...  This research was supported under the contract with the Chung Shang Institute of Science and Technology.  ... 
doi:10.1117/12.184101 fatcat:ozmetu5porepjdi3cz3jzroecy

Front Matter: Volume 10177

2017 Infrared Technology and Applications XLIII  
These two-number sets start with 00, 01, 02, 03, 04,  ...  SPIE uses a seven-digit CID article numbering system structured as follows:  The five digits correspond to the SPIE volume number.  The last two digits indicate publication order within the volume using  ...  A clip-on weapon sight weighing 1.1 kg is being designed with this FPA. Another company has designed a series of eSWIR cameras based on Hg 1-x Cd x Te absorbers.  ... 
doi:10.1117/12.2280471 fatcat:ec7krm2wcze7ljqi4whzb2xj5q

Front Matter: Volume 9451

Proceedings of SPIE, Bjørn F. Andresen, Gabor F. Fulop, Charles M. Hanson, Paul R. Norton
2015 Infrared Technology and Applications XLI  
Publication of record for individual papers is online in the SPIE Digital Library.  ...  SPIEDigitalLibrary.org Paper Numbering: Proceedings of SPIE follow an e-First publication model, with papers published first online and then in print.  ...  New arrays with 8 µm pitch for MWIR applications were presented along with an NE∆T histogram. 10 µm pitch FPAs were also reported in a second paper in this session.  ... 
doi:10.1117/12.2184307 fatcat:ktcoljdc65eyvjkz432tspqmxq

SCD's cooled and uncooled photo detectors for NIR SWIR

Rami Fraenkel, Daniel Aronov, Yael Benny, Eyal Berkowicz, Leonid Bykov, Zipi Calahorra, Tal Fishman, Avihoo Giladi, Elad Ilan, Philip Klipstein, Lidia Langof, Inna Lukomsky (+9 others)
2012 Infrared Technology and Applications XXXVIII  
Development of a SNIR ROIC with a low noise imaging mode and unique laser-pulse detection modes.  ...  In the second part we will demonstrate our VGA, 15µm pitch, InGaAs arrays with dark current density below 1.5nA/cm 2 at 280K.  ...  We are in debt to the numerous engineers and technicians participating in the project, for their dedicated contribution to the development and production of the detectors.  ... 
doi:10.1117/12.918098 fatcat:ikg2idfayvf5xdsgj544u4h4ly

Infrared Detectors for the Future

A. Rogalski
2009 Acta Physica Polonica. A  
In spite of successful commercialization of uncooled microbolometers, the infrared community is still searching for a platform for thermal imagers that combine affordability, convenience of operation,  ...  Despite serious competition from alternative technologies and slower progress than expected, HgCdTe is unlikely to be seriously challenged for high-performance applications, applications requiring multispectral  ...  impedance, fast response time, and low power consumption comply well with the requirements for large FPAs fabrication.  ... 
doi:10.12693/aphyspola.116.389 fatcat:ggjpfttbcbemnopmfm2pzalk64

Front Matter: Volume 9819

Proceedings of SPIE, Bjørn F. Andresen, Gabor F. Fulop, Charles M. Hanson, John L. Miller, Paul R. Norton
2016 Infrared Technology and Applications XLII  
Publication of record for individual papers is online in the SPIE Digital Library.  ...  SPIE uses a six-digit CID article numbering system in which:  The first four digits correspond to the SPIE volume number.  The last two digits indicate publication order within the volume using a Base  ...  Its low mass and power consumption combined with absence of moving components make it ideal for low-orbit space applications.  ... 
doi:10.1117/12.2244347 fatcat:wrjrvp7gprbf5l4l3aimduakae

Competitive technologies of third generation infrared photon detectors

A. Rogalski
2006 Opto-Electronics Review  
is used for staring systems (second generation).  ...  AbstractHitherto, two families of multielement infrared (IR) detectors are used for principal military and civilian infrared applications; one is used for scanning systems (first generation) and the other  ...  Even though that QWIP is a photoconductor, several its properties such as high impedance, fast response time, and low power consumption well comply requirements of large FPAs fabrication.  ... 
doi:10.2478/s11772-006-0012-2 fatcat:ehqenh2dd5goppnsgtzwx5woyy

Semiconductor infrared up-conversion devices

Y. Yang, Y.H. Zhang, W.Z. Shen, H.C. Liu
2011 Progress in Quantum Electronics  
In this review article, we first present a brief overview of existing up-conversion techniques and then discuss in detail one particular approach.  ...  We report the progress of semiconductor PD-LED up-conversion devices, and point out directions for future improvement.  ...  The NIR-induced green light luminance reached as high as 1580 cd/m 2 at a bias of 11.5 V with an input 1.5 mm NIR power density of 0.67 mW/mm 2 .  ... 
doi:10.1016/j.pquantelec.2011.05.001 fatcat:i77wurrh2bhvfigxjcbrinws6q

A Modularized Noise Analysis Method with Its Application in Readout Circuit Design

Xiao Wang, Zelin Shi, Baoshu Xu
2015 VLSI design (Print)  
In order to analyze the noise of a ROIC with distinct illustration of each noise source transferring, a modularized noise analysis method is proposed whose application is applied for a ROIC cell, where  ...  all the MOSFETs are optimized in subthreshold region, leading to the power dissipation 2.8 μW.  ...  Acknowledgment The authors thank Key Laboratory of Opto-Electronic Information Processing for the continuous supporting of the research on noise of readout integrated circuits.  ... 
doi:10.1155/2015/593019 fatcat:z7bduuqbcjbwdpepzdrib7broy

A 2 kfps Sub-µW/Pix Uncooled-PbSe Digital Imager With 10 Bit DR Adjustment and FPN Correction for High-Speed and Low-Cost MWIR Applications

Josep Maria Margarit, German Vergara, Victor Villamayor, Raul Gutierrez-Alvarez, Carlos Fernandez-Montojo, Lluis Teres, Francisco Serra-Graells
2015 IEEE Journal of Solid-State Circuits  
Index Terms CMOS, imager, digital pixel sensor (DPS), fixed pattern noise (FPN), low-power, infrared, MWIR, PbSe, uncooled, high-speed, low-cost.  ...  This work fills the gap by presenting a monolithic uncooled high-speed imager based on vapor-phase deposition lead selenide (VPD PbSe) photoconductors and a fully digital and configurable CMOS read-out  ...  ) with high fill factors.  ... 
doi:10.1109/jssc.2015.2464672 fatcat:v7p24jmfh5flxjihhniuvjwvky
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