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The 2018 GaN power electronics roadmap

H Amano, Y Baines, E Beam, Matteo Borga, T Bouchet, Paul R Chalker, M Charles, Kevin J Chen, Nadim Chowdhury, Rongming Chu, Carlo De Santi, Maria Merlyne De Souza (+53 others)
2018 Journal of Physics D: Applied Physics  
It is also important to improve reliability and ensure operation at higher temperatures (300 °C), with the markets of automotive (EV and HEV) and motor drives for industrial tools being targeted.  ...  In addition, novel processing techniques are also promising to provide significant performance, cost, and integration improvements.  ...  With the innovation and the optimization of the converter topologies in GaN, the density and efficiency will be further improved.  ... 
doi:10.1088/1361-6463/aaaf9d fatcat:a6z74togi5ghtcw4eykzbm5gxm

2019 Index IEEE Journal of the Electron Devices Society Vol. 7

2019 IEEE Journal of the Electron Devices Society  
., +, JEDS 2019 315-321 Fault-Tolerant Architecture for Reliable Integrated Gate Drivers. Kim, J., +, JEDS 2019 1038-1046 IGZO TFT Gate Driver Circuit With Improved Output Pulse.  ...  ., +, JEDS 2019 315-321 Fault-Tolerant Architecture for Reliable Integrated Gate Drivers.  ... 
doi:10.1109/jeds.2020.2969758 fatcat:t5gvi7c3ofbvxfv4xv6sngquxq

Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

Salvatore Musumeci, Fabio Mandrile, Vincenzo Barba, Marco Palma
2021 Energies  
This target turns out to be complex when using pure silicon switch technologies.  ...  Thus, in GaN FETs, a high switching frequency with a strong decrease in dead time is achievable.  ...  Moreover, the integration approach improves the system's reliability.  ... 
doi:10.3390/en14196378 fatcat:4dwjcwacezdbfbhwipuvfcho6u

2020 Index IEEE Journal of the Electron Devices Society Vol. 8

2020 IEEE Journal of the Electron Devices Society  
., +, JEDS 2020 152- 156 BIMOS integrated circuits Realization of an IGBT Gate Driver With Dualphase Turn-On/Off Gate Con- trol.  ...  ., +, JEDS 2020 336-340 Realization of an IGBT Gate Driver With Dualphase Turn-On/Off Gate Control.  ...  Resistors Low-Voltage Hf-ZnO Thin Film Transistors With Ag Nanowires Gate Electrode and Their Application in Logic Circuit. Wu, J., +, JEDS 2020  ... 
doi:10.1109/jeds.2021.3055467 fatcat:yhpqbxl4nffg7mg2cwuskvuuo4

A Fast-Switching Integrated Full-Bridge Power Module Based on GaN eHEMT Devices

Asger Bjorn Jorgensen, Szymon Beczkowski, Christian Uhrenfeldt, Niels H. Petersen, Soren Jorgensen, Stig Munk-Nielsen
2018 IEEE transactions on power electronics  
Conventional packaging solutions for power levels of a few kilowatt are bulky, meaning important gate driver and measurement circuitry are not properly integrated.  ...  This paper presents a fast-switching integrated power module based on gallium nitride enhancementmode high-electron-mobility transistors, which is easier to manufacture compared with other hybrid structures  ...  The structure is used to design a fast-switching integrated GaN eHEMT power module, which focuses on a board layout to simultaneously achieve both fast dv/dt and di/dt switching, as described in Section  ... 
doi:10.1109/tpel.2018.2845538 fatcat:ypcggo4xxfahjawotvfqns34e4

Smart Power Devices and ICs Using GaAs and Wide and Extreme Bandgap Semiconductors

T. Paul Chow, Ichiro Omura, Masataka Higashiwaki, Hiroshi Kawarada, Vipindas Pala
2017 IEEE Transactions on Electron Devices  
We evaluate and compare the performance and potential of GaAs and of wide and extreme bandgap semiconductors (SiC, GaN, Ga 2 O 3 , diamond), relative to silicon, for power electronics applications.  ...  Paul Chow, is with the Electrical, Computer, and Systems Engineering  ...  In this chip, 11V rated enhancement mode pHEMTs are used as power switches, and the gate driver is integrated along with the low and high side power devices on the same chip.  ... 
doi:10.1109/ted.2017.2653759 fatcat:k2ejwqn5kbcn3h2zv5j7bkzdcm

Full custom design of an arbitrary waveform gate driver with 10 GHz waypoint rates for GaN FETs

Dawei Liu, Harry C. P. Dymond, Simon Hollis, Jianjing Wang, Neville Mcneill, Dinesh Pamunuwa, Bernard H. Stark
2020 IEEE transactions on power electronics  
silicon integrated circuits and a fully digital architecture to provide robustness under high slew rates of the ground rail.  ...  To this end, driver ICs with integrated arbitrary waveform generators have been used to achieve complex gate signals.  ...  Thus, control data for eight clock cycles is needed in memory, both for turn-ON and turn-OFF of the GaN device.  ... 
doi:10.1109/tpel.2020.3044874 fatcat:pqp5bq2fefakrltdsmg3gnnko4

2020 Index IEEE Electron Device Letters Vol. 41

2020 IEEE Electron Device Letters  
Li, T., Improved Thermopile on Pyramidally-Textured Dielectric Film; LED July 2020 1094-1097 He, Y., see 1245-1248 He, Y., see 1360-1363 He, Y., see Zhang, C., LED April 2020 617-620 He, Y., Wang, Y  ...  ., and Li, T., Performance Enhanced Thermopile With Rough Dielectric Film Black; LED April 2020 593-596 He, Z., see Gao, R., LED Jan. 2020 38-41 He, Z., see 1424-1427 He, Z., see Dev, D., LED June 2020  ...  Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor.  ... 
doi:10.1109/led.2021.3052397 fatcat:3hcysdtecve2zhapvka44rw7z4

Review of GaN HEMT Applications in Power Converters over 500 W

Chao-Tsung Ma, Zhen-Huang Gu
2019 Electronics  
In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters  ...  with complex switching schemes.  ...  Acknowledgments: The author would like to thank the Ministry of Science and Technology (MOST) of Taiwan for financially support the energy related researches regarding key technologies and the design of  ... 
doi:10.3390/electronics8121401 fatcat:j2jufzm44bckpmesngeup3tch4

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Sayan Seal, Homer Mantooth
2017 Energies  
This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules.  ...  the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging.  ...  Acknowledgments: This work was supported by the National Science Foundation Engineering Research Center for Power Optimization of Electro Thermal Systems (POETS) with cooperative agreement EEC-1449548.  ... 
doi:10.3390/en10030341 fatcat:uiooificlzg7lkoaovb6twaggm

ECCE 2020 Index

2020 2020 IEEE Energy Conversion Congress and Exposition (ECCE)  
, Evan A Resonant Gate Driver with Variable Gain and a Capacitively Decoupled High-Side GaN-FET [#0421] 3793 Sousa, Reuben P.R.  ...  Enabled Fast Multi-Objective Optimization for Electrified AviationPower System Design [#0819] An Integrated Programmable Gate Timing Control and Gate Driver Chip for a 48V-to-0.75V Active-Clamp Forward  ... 
doi:10.1109/ecce44975.2020.9236355 fatcat:sbl4a4gonrf77kylohb3nbmhqa

Automotive Power Module Packaging: Current Status and Future Trends

Yuhang Yang, Lea Dorn-Gomba, Romina Rodriguez, Christopher Mak, Ali Emadi
2020 IEEE Access  
Packaging technology often has a critical impact on module performance and reliability. This paper presents a comprehensive review of the automotive power module packaging technologies.  ...  For more information, see https://creativecommons.org/licenses/by/4.0/. This article has been accepted for publication in a future issue of this journal, but has not been fully edited.  ...  (nH) Turn on/off speed (kV/µs) Others [82], [86] Gate driver /components integration Half bridge; 800V; 46A 36×24 4.12 (j-a) NA 96/39 75% reduction of turn/off loss [87] Gate driver  ... 
doi:10.1109/access.2020.3019775 fatcat:vuyuybmz35ct5jtaxj3so6orri

Diamond power devices: State of the art, modelling and figures of merit

Nazareno Donato, Nicolas Rouger, Julien Pernot, Giorgia Longobardi, Florin Udrea
2019 Journal of Physics D: Applied Physics  
field (>10 MV cm −1 ), and large band gap (5.47 eV), diamond has overwhelming advantages over silicon and other wide bandgap semiconductors (WBGs) for ultra-high-voltage and high-temperature (HT) applications  ...  Finally, the paper will conclude with suggestions on how to design power converters with diamond devices and will provide the roadmap of diamond device development for power electronics.  ...  Acknowledgments The authors would like to thank Cédric Masante, Gaetan Perez and Aurélien Marechal for their contributions to the modelling of diamond devices presented in this article.  ... 
doi:10.1088/1361-6463/ab4eab fatcat:avixse4pjzcxflouwgvmbhkhnu

2020 Index IEEE Transactions on Electron Devices Vol. 67

2020 IEEE Transactions on Electron Devices  
, N., Buried Power Rail Integration With FinFETs for Ultimate CMOS Scaling; 5349-5354 Gupta, A., see Gupta, C., TED May 2020 2208-2212 Gupta, C., Dey, S., Goel, R., Hu, C., and Chauhan, Y.S., Modeling  ...  Degradation in N-Channel Gate-All-Around Nanowire FETs; TED Jan. 2020 4-10 Gupta, C., Gupta, A., Vega, R.A., Hook, T.B., and Dixit, A., Impact of Hot-Carrier Degradation on Drain-Induced Barrier Lowering  ...  Augmented DTSCR With Fast Turn-On Speed for Nanoscale ESD Protection Applications.  ... 
doi:10.1109/ted.2021.3054448 fatcat:r4ertn5jordkfjjvorvss7n6ju

Building Blocks for GaN Power Integration

Michael Basler, Richard Reiner, Stefan Moench, Fouad Benkhelifa, Philipp Doring, Patrick Waltereit, Rudiger Quay, Oliver Ambacher
2021 IEEE Access  
This work experimentally investigates a number of key building blocks for GaN power integration.  ...  GaN technology is on the advance for the use in power ICs thanks to space-saving integrated circuit components and the increasing number of integrated devices.  ...  This reference achieves a line sensitivity of 0.32%/V for a range of VDD from 3.9-25 V and a temperature compensation of 23.6 ppm/°C. V. GAN POWER INTEGRATION A.  ... 
doi:10.1109/access.2021.3132667 fatcat:o4ce76lm2bfmfmjc2xfnwmgaea
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