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Hardware-Accelerated Platforms and Infrastructures for Network Functions: A Survey of Enabling Technologies and Research Studies
2020
IEEE Access
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[273] have proposed a 3rd generation V-NAND technology that supports 256 GB with 3 b/cell flash memory with 48 stacked WLs. In particular, Kang et al. ...
These data rates are scaled significantly with 3D stacking of memory [as in the case of High Bandwidth Memory (HBM), see Section III-E3]; for example, the total bandwidth scales up to 512 Gb/s for a 4 ...
doi:10.1109/access.2020.3008250
fatcat:kv4znpypqbatfk2m3lpzvzb2nu