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RFIC 2020 Program

2020 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)  
A 28 nm CMOS 8-element 6 GHz beamforming TX has a per-element area of 0.01 mm 2 and a per-element power of 47.5 mW.  ...  Fabricated in 65 nm CMOS process, the MR-ILFM consumes 10.0-mW power and can operate from 22.4 to 40.6 GHz with 4.3-to-5.8-GHz inputs.  ...  A modulator that provides outphasing signals to synthesize RF-PWM without a narrow pulse-width limitation is proposed. The Cartesian transmitter is implemented in a 65-nm CMOS process.  ... 
doi:10.1109/rfic49505.2020.9218389 fatcat:fqkpw3oau5gzpoi3gscgb7kwhi

2019 Index IEEE Journal of Solid-State Circuits Vol. 54

2019 IEEE Journal of Solid-State Circuits  
., +, JSSC Dec. 2019 3421-3436 An 88-fJ/40-MHz [0.4 V]-0.61-pJ/1-GHz [0.9 V] Dual-Mode Logic 8 # 8 bit Multiplier Accumulator With a Self-Adjustment Mechanism in 28-nm FD-SOI.  ...  Baraani Dast- jerdi, M., +, JSSC Dec. 2019 3525-3540 Clock and data recovery circuits A 10-Gb/s, 0.03-mm 2 , 1.28-pJ/bit Half-Rate Injection-Locked CDR With Path Mismatch Tracking Loop in a 28-nm CMOS  ... 
doi:10.1109/jssc.2019.2956675 fatcat:laiuae7dtragjijttgfatsldmu

COREnect D3.3. Initial COREnect industry roadmap [article]

AUSTRALO
2021 Zenodo  
For the lower mm-wave frequencies (28 GHz, 39 GHz) beamforming with a limited number of antennas (< 10) is used in UE.  ...  The combination of these two innovations is called "ultra-thin body and buried oxide Fully Depleted SOI" or UTBB-FD-SOI.  ...  Appendix The COREnect roadmap activities strongly rely on interactions with experts in the field.  ... 
doi:10.5281/zenodo.5075317 fatcat:ww7icphzfjcdjlxbsbo2qekghy

Chemical Vapor Deposition (CVD) [chapter]

Yoke Khin Yap, Dongyan Zhang
2016 Encyclopedia of Nanotechnology  
control radio frequency (RF) signal paths in microwave and millimeter-wave circuits through mechanical motion and contact.  ...  While micromachined beams or plates are also utilized in capacitive switches, these switches rely on metal-to-dielectric contacts to implement their on and off states.  ...  The CNT 1 is 1.75 mm in length by 20 nm in diameter, and the CNT 2 is 1.78 mm in length by 31 nm in diameter as shown in Fig. 13a.  ... 
doi:10.1007/978-94-017-9780-1_345 fatcat:hqqkocm2sne5jp32r7akdjceyi

Cell Micro-patterning [chapter]

2016 Encyclopedia of Nanotechnology  
control radio frequency (RF) signal paths in microwave and millimeter-wave circuits through mechanical motion and contact.  ...  While micromachined beams or plates are also utilized in capacitive switches, these switches rely on metal-to-dielectric contacts to implement their on and off states.  ...  The CNT 1 is 1.75 mm in length by 20 nm in diameter, and the CNT 2 is 1.78 mm in length by 31 nm in diameter as shown in Fig. 13a.  ... 
doi:10.1007/978-94-017-9780-1_100152 fatcat:msyahfwivvcxhol3nltwdi546e

Analysis and design of 40 GHz frequency generation circuits in 90 nm CMOS technology [article]

Ran Shu, Technische Universität Berlin, Technische Universität Berlin, Georg Böck
2014
A 30 % locking range from 36 GHz to 49 GHz has been realized by adopting a transformer-based dual-path injection technique. The other design is an 8:1 static divider with 130 nm CMOS technology.  ...  It achieves an 8.9 % tuning range and a -96.7 dBc/Hz phase noise at 1 MHz offset, while consuming only 1.65 mW power. Two other designs of the mm-wave frequency divider have also been presented.  ...  Two demonstrations of mm-wave frequency dividers are presented. One is the design of a Q-band ILFD with 90 nm CMOS technology.  ... 
doi:10.14279/depositonce-4005 fatcat:yhwzidiklzbgbfszs4f5b5b7ny

Flexible phase-locked loops and millimeter wave PLL components for 60-GHz wireless networks in CMOS [article]

Cheema, HM (Hammad), Roermund, AHM (Arthur) Van, Mahmoudi, R (Reza)
2010
The work leading to this thesis has been performed in the framework of WiComm: Microelectronics for the next generation of wireless communication project which is a part of a Dutch national research program  ...  The natural choice is an injection locked frequency divider which has been demonstrated at mm-wave frequencies, albeit with narrow locking range.  ...  Due to the abovementioned issues, DVCOs have yet to find a place as main stream VCO choice in mm-wave CMOS circuits.  ... 
doi:10.6100/ir657030 fatcat:tolw5no2rbavzf3uj6zlw4uh3y

A design methodology for 2D sparse NDE arrays using an efficient implementation of refracted-ray TFM

Jerzy Dziewierz, Timothy Lardner, Anthony Gachagan
2013 2013 IEEE International Ultrasonics Symposium (IUS)  
These changes in collagen microstructure were produced using both ultrasound standing wave fields and traveling wave fields.  ...  By changing the initial density of the cell bands during hydrogel formation, the technology can produce vascular networks having two distinct morphologiesone that resembles peripheral vascular networks  ...  In this report, bolt-clamped Langevin transducer with 30 mm in diameter is used to drive the rotor with 5 mm in outer diameter.  ... 
doi:10.1109/ultsym.2013.0035 fatcat:th5znfh7y5bklfdbmhb4u6iq2i

CMOS Signal Synthesizers for Emerging RF-to-Optical Applications

Jahnavi Sharma
2017
The need for clean and powerful signal generation is ubiquitous, with applications spanning the spectrum from RF to mm-Wave, to into and beyond the terahertz-gap.  ...  generation and system design in the relatively emptier mm-Wave to sub-mmWave spectrum, much of the latter falling in the "Terahertz Gap".  ...  The authors of [45] have designed a travelling wave-oscillator with a 300GHz second harmonic output in 45nm SOI CMOS.  ... 
doi:10.7916/d85q66z4 fatcat:hf6c5tnqavg3xl3q5ef6b47i5u

Design of Power-Efficient Optical Transceivers and Design of High-Linearity Wireless Wideband Receivers

Yudong Zhang
2021
The analysis is validated by comparing analytical predictions with simulations for an ILRO-based QCG in 28 nm CMOS technology.  ...  Combining prior arts and proposed circuit techniques, a receiver chip and a transmitter chip including two 10 Gb/s data channels and one 2.5 GHz clocking channel are designed and implemented in 28 nm CMOS  ...  Our design is implemented in 28 nm CMOS technology and integrated with the custom photonic integrated circuits and a silicon interposer.  ... 
doi:10.7916/d8-8dhk-gn33 fatcat:523b7u2upbazfnifgxu76fenuy

Design and Implementation of 60 GHz CMOS Power Amplifiers

Payam Masoumi Farahabadi
2016
Despite offering a large bandwidth, the high signal attenuation caused by oxygen absorption in 60 GHz band requires the wireless transmitters to transmit signals with power as large as 27 dBm, so the receivers  ...  Therefore, the design of power amplifiers capable of generating such large output powers proves to be a major challenge in the development of 60 GHz wireless transceivers, especially if CMOS Firstly, I  ...  However, with the recent advances in CMOS technologies, ultra deep sub-micron and FD-SOI devices are available with relatively high f max (e.g. 28 nm technology with f max = 300 GHz).  ... 
doi:10.7939/r3cn6z94n fatcat:irqrtzfc7fflrgy35mk3u3hdka

Μελέτη και σχεδιασμός ολοκληρωμένων κυκλωμάτων για εφαρμογές υψηλών συχνοτήτων:

Βασίλειος Ν. Καλεντερίδης
2012
to establish a linear-in-dB gain range (VGA).  ...  Also presents a programmable frequency divider circuit based on the technique of pulse-swallow function in 15GHz and RF CMOS 90nm process, which is part of a PLL for wireless data transmission using very  ...  Bibyk, “A High-Speed Low-Power Divide-by-15/16 Dual Modulus Prescaler in 0.6 µm CMOS”, Analog Integrated Circuits and Signal Processing, vol. 28, pp. 195–200, 2001, Kluwer Academic Publishers  ... 
doi:10.26262/heal.auth.ir.130801 fatcat:ig5xr6afkjg45o2onvypt556oi

Transceiver architectures and sub-mW fast frequency-hopping synthesizers for ultra-low power WSNs [article]

Lopelli, E (Emanuele), Roermund, AHM (Arthur) Van, Tang, JD (Johan) Van Der
2010
Transceiver architectures and sub-mW fast frequency-hopping synthesizers for ultra-low power WSNs. Eindhoven: Technische Universiteit Eindhoven. https://doi.org/10.6100/IR657018  ...  Indeed, the system requires to divide-by-two only in a certain frequency range. The TWD has a higher sensitivity compared to a static master-slave based divider-by-two.  ...  Simulation and experimental results The frequency hopping synthesizer is implemented in a 90 nm CMOS process. The die photograph is shown in Fig. 5. 28.  ... 
doi:10.6100/ir657018 fatcat:jgkmw2djxfevlpiv2x7at7fwim

Low-Power Human-Machine Interfaces: Analysis And Design

Victor Javier Kartsch Morinigo
2020
By further adding energy harvesting techniques combined with the firmware and hardware optimization, the systems achieved self-sustainable operation or a significant boost in battery life.  ...  A Al lm ma a M Ma at te er r S St tu ud di io or ru um m --U Un ni iv ve er rs si it tà à d di i B Bo ol lo og gn na a DOTTORATO DI RICERCA IN INGEGNERIA ELETTRONICA, TELECOMUNICAZIONI E TECNOLOGIE DELL'INFORMAZIONE  ...  It also includes the entire 16-bit PulpV3 SoC PulpV3 is a 28-nm UTBB FD-SOI SoC [44] that includes a cluster of four cores, where each processor implements a power-optimized four-pipeline stage micro-architecture  ... 
doi:10.6092/unibo/amsdottorato/9396 fatcat:hznttaojwncynnsd7r6rlsh56e

Hybrid integration towards single-chip Brillouin devices [article]

Choon Kong Lai, University, The Australian National
2021
In this thesis, a hybrid waveguide solution will be proposed by leveraging the vertical taper technology via shadow mask deposition.  ...  in a fully integrated Brillouin based device.  ...  index profile is adjusted at the bend area [28] [29] [30] .  ... 
doi:10.25911/p8pj-np59 fatcat:thlhzoy5gjcvtknn7allliatu4
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