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A 30 MHz-3 GHz Watt-Level Stacked-FET Linear Power Amplifier
2019
IEICE Electronics Express
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In this letter, we present a 30 MHz-3 GHz ultra-broadband GaAs stacked power amplifier (PA) fabricated in 0.15 µm pHEMT process for many applications. ...
The large-signal measurements show that the output power is 30.5 dBm ² 1.2 dB at 12 dBm input power, with a peak PAE of 30% at 400 MHz. ...
Conclusion In this letter, a 30 MHz-3 GHz stacked broadband PA is presented, which is fabricated in 0.15 µm GaAs process. ...
doi:10.1587/elex.16.20190252
fatcat:vgxr2nwvyzhivlon232l4t3co4
A CMOS Stacked-FET Power Amplifier Using PMOS Linearizer with Improved AM-PM
2014
Journal of the Korean Institute of Electromagnetic Engineering and Science
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A linear stacked field-effect transistor (FET) power amplifier (PA) is implemented using a 0.18-μm silicon-on-insulator CMOS process for W-CDMA handset applications. ...
The fabricated 836.5 MHz linear PA module shows an adjacent channel leakage ratio better than -40 dBc up to the rated linear output power of 27.1 dBm, and power-added efficiency of 45.6% at 27.1 dBm without ...
Watt-level power amplification has thus been achieved in recent years [1 3] . ...
doi:10.5515/jkiees.2014.14.2.68
fatcat:tijj4yomp5fnjefzt5g6wxeuly
A Review of 5G Power Amplifier Design at cm-Wave and mm-Wave Frequencies
2018
Wireless Communications and Mobile Computing
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., maximum possibly even above 1 GHz) demands high-power efficiency and stringent linearity from its power amplifier (PA). ...
As the centimeter-wave (cm-Wave) 5G systems will probably be deployed on the market earlier than their mm-Wave counterparts, we will review in this paper the latest development on 15 GHz and 28 GHz 5G ...
An example is given in Figure 5 , where a three-stage, 4-stack FET CMOS 15 GHz 5G PA is reported [25] . ...
doi:10.1155/2018/6793814
fatcat:lvkjrs4rkfa7zopgz7s4u2dlvq
Millimeter-wave power amplifiers in 45nm CMOS SOI technology
2011
IEEE 2011 International SOI Conference
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Table 5 . 5 1 Performance comparison of Watt-level CMOS PAsA fully-integrated wideband power amplifier is implemented using dynamicallybiased stacked Cascode cells in a 45 nm CMOS SOI technology. ...
A Watt-level output power with a wide operating bandwidth from 1.5 to 2.4 GHz is achieved despite using only low breakdown thin-oxide CMOS transistors in an advanced technology node. ...
doi:10.1109/soi.2011.6081689
fatcat:3vibcr5at5fa7irjzi7ebytm7e
50 Watt S-band power amplifier in 0.25 μm GaN technology
2014
2014 9th European Microwave Integrated Circuit Conference
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The results show that the amplifier delivers an output power of over 50 W within the frequency range from 3.05 to 3.5 GHz at a PAE of more than 62 %. ...
A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. ...
The two stage amplifier delivers and output power of in excess of 50 Watt over a frequency range from 3.05 to 3.5 GHz with a peak power of more than 60 W. ...
doi:10.1109/eumic.2014.6997860
fatcat:ueelph6gdvcftccvwe6feftt6i
Optically controlled switch-mode current-source amplifiers for on-coil implementation in high-field parallel transmission
2015
Magnetic Resonance in Medicine
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Results-The amplifier delivered in excess of 44 W RF power and caused minimal interference with MRI. ...
Amplifier performance was tested by benchtop measurements as well as with imaging at 7 T (300 MHz) and 11.7 T (500 MHz). ...
envelope detection (ED) circuitry (ADL5511, Analog Devices) followed by a low power ADC clocked at 30 MHz (generated externally from a master clock board). ...
doi:10.1002/mrm.25857
pmid:26256671
pmcid:PMC4749483
fatcat:msczyg6pnbdifhejyoohq2stna
A Review of Advanced CMOS RF Power Amplifier Architecture Trends for Low Power 5G Wireless Networks
2018
Electronics
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without sacrificing linearity. ...
The radio frequency (RF) power amplifier (PA) performance directly affects the efficiency of any transmitter, therefore, the emerging 5G cellular network requires new PA architectures with improved efficiency ...
≤500 MHz. Can be
increased up to 1 GHz
introducing an alternative
output impedance inverter.
≤40 MHz.
The power combiner forms
a bottleneck. ...
doi:10.3390/electronics7110271
fatcat:fyer6fg3ujfu3kht67zj2dzhii
2020 Index IEEE Microwave and Wireless Components Letters Vol. 30
2020
IEEE Microwave and Wireless Components Letters
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., +, LMWC July 2020 673-676 A 120-GHz Bandwidth CMOS Distributed Power Amplifier With Multi-Drive Intra-Stack Coupling. ...
., +, LMWC May 2020 492-495
A 120-GHz Bandwidth CMOS Distributed Power Amplifier With Multi-
Drive Intra-Stack Coupling. ...
doi:10.1109/lmwc.2021.3055080
fatcat:2yn4ofvchnggvjguzlz2kv3qyi
RFIC 2020 Program
2020
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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model has been optimized to predict breakdown in a stacked SOI FET. ...
The proposed wideband watt-level DPA is implemented in conventional 40-nm CMOS technology. ...
RTu1C-3 Preserving Polar Modulated Class-E Power Amplifier Linearity Under Load Mismatch
NOTES
RFIC Symposium Virtual Event ...
doi:10.1109/rfic49505.2020.9218389
fatcat:fqkpw3oau5gzpoi3gscgb7kwhi
2019 Index IEEE Journal of Solid-State Circuits Vol. 54
2019
IEEE Journal of Solid-State Circuits
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Zhang, A., +, JSSC April 2019 1017-1028 A Watt-Level Quadrature Class-G Switched-Capacitor Power Amplifier With Linearization Techniques. ...
., +, JSSC June 2019 1613-1623 A 28-/37-/39-GHz Linear Doherty Power Amplifier in Silicon for 5G Applications. ...
doi:10.1109/jssc.2019.2956675
fatcat:laiuae7dtragjijttgfatsldmu
Flexible Power Amplifier Architectures for Spectrum Efficient Wireless Applications
[chapter]
2010
Advanced Microwave Circuits and Systems
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In the 3.4 GHz band the PA prototypes exhibit a maximum linear gain of 6 dB at 3.42 GHz, and present a 0.5dB gain bandwidth of approximately 60 MHz. ...
In fact the contour plots show a linear behaviour which is independent of the power level in the other channel. ...
Since ( ) z n is linear in the , k l a , the latter can be estimated by a simple least-squares method. ...
doi:10.5772/8426
fatcat:adl244ud3jazxdjkzrs3rh6nay
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
2012
IEEE transactions on microwave theory and techniques
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However, these high power densities, in terms of watts per millimeter, also present extreme power dissipation demands on both the transistor layouts, as 0018-9480/$31.00 ...
for single die up to several hundred watts [5], [6] . ...
Acknowledgements are made particularly to those referenced authors that have provided examples of PAs covering a wide range of frequencies and power levels. ...
doi:10.1109/tmtt.2012.2187535
fatcat:fs43axbqqfd3ld2tdtzibppho4
A Scalable Cryo-CMOS Controller for the Wideband Frequency-Multiplexed Control of Spin Qubits and Transmons
2020
IEEE Journal of Solid-State Circuits
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scalability to the large number of qubits required in a practical application. ...
This work presents a cryo-CMOS microwave signal generator for frequency-multiplexed control of 4 × 32 qubits Manuscript ...
To realize a highly linear RF transmitters with low output power, operating up to 20 GHz, multiple-return-to-zero (MRZ) DAC topologies are typically preferred over a standard RF DAC architecture [30] ...
doi:10.1109/jssc.2020.3024678
fatcat:ul7hrya7hbfonjhtjkad3zv4me
Microfluidic Overhauser DNP chip for signal-enhanced compact NMR
2021
Scientific Reports
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equilibrium level at a microwave power level of 0.5 W. ...
Here we report a compact double resonant chip stack system that implements in situ dynamic nuclear polarisation of a 130 nL sample volume, achieving signal enhancements of up to − 60 w.r.t. the thermal ...
JGK acknowledges additional support from an EU2020 FET grant (TiSuMR, 737043), ERC-SyG (HiSCORE, 951459), the DFG under grant KO 1883/39-1 optiMUM, in the framework of the German Excellence Intitiative ...
doi:10.1038/s41598-021-83625-y
pmid:33633153
pmcid:PMC7907115
fatcat:jyv3sblnyfegjp5dizwb4mjr6u
A 2.45-GHz 0.13-$\mu{\hbox {m}}$ CMOS PA With Parallel Amplification
2007
IEEE Journal of Solid-State Circuits
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In this paper, a fully integrated 0.13-m CMOS RF power amplifier for Bluetooth is presented. ...
The amplifier achieves a measured output power of 23 dBm at a supply voltage of 1.5 V and a drain efficiency of 35% and a global efficiency of 29%. ...
Another power combining technique was introduced by Aoki et al. [10] . It uses a transformer to combine several amplifiers in series to achieve a Watt-level output power. ...
doi:10.1109/jssc.2006.891715
fatcat:qqqnzbdyijcnth57eayfzemfle
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