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2022 IEEE International Solid- State Circuits Conference (ISSCC)
A 3D NAND Flash memory continues to increase in bit density and performance for both mobile and storage applications. Word line layer numbers now exceed 220 layers. ... The 4b/cell architecture has matured and been widely used, as evidenced by papers in this session: confirming strong industry and market interest. 3D NAND has been proposed for similar vector matching ... The read-out bit-error rate is reduced by an algorithm that finds the optimal read level. 9:00 AM 7.4 A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface ...doi:10.1109/isscc42614.2022.9731577 fatcat:supy2josave3fijlymllg3iwme