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High-Efficiency CMOS Power Amplifier Using Uneven Bias for Wireless LAN Application

Namsik Ryu
2012 ETRI Journal  
The fully integrated CMOS PA is implemented using the commercial Taiwan Semiconductor Manufacturing Company 0.18-μm RF-CMOS process with a supply voltage of 3.3 V.  ...  This paper proposes a high-efficiency power amplifier (PA) with uneven bias.  ...  Introduction The demand for a higher integration of wireless transceivers in wireless communication systems has been growing rapidly to reduce the cost and size.  ... 
doi:10.4218/etrij.12.1812.0024 fatcat:lm4wqt2ulndzjl4eb73op6kvn4

A Review of Watt-Level CMOS RF Power Amplifiers

Ted Johansson, Jonas Fritzin
2014 IEEE transactions on microwave theory and techniques  
This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature.  ...  A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.  ...  The authors would like to acknowledge Duncan Platt and Michael Salter for value comments on the manuscript.  ... 
doi:10.1109/tmtt.2013.2292608 fatcat:3oqsbp3izrf5rmy3kxwtswcan4

Fully Integrated CMOS Power Amplifier With Efficiency Enhancement at Power Back-Off

Gang Liu, Peter Haldi, Tsu-Jae King Liu, Ali M. Niknejad
2008 IEEE Journal of Solid-State Circuits  
This paper presents a new approach for power amplifier design using deep submicron CMOS technologies.  ...  A 1.2 V, 2.4 GHz fully integrated CMOS power amplifier prototype was implemented with thin-oxide transistors in a 0.13 m RF-CMOS process to demonstrate the concept.  ...  rated power for the amplifier. As the output power is backed off from that single point, the efficiency drops rapidly. However, power back-off is inevitable in today's wireless communication systems.  ... 
doi:10.1109/jssc.2007.916585 fatcat:s6omkyxlnzfjjokpu5t47x2tli

2019 Index IEEE Journal of Solid-State Circuits Vol. 54

2019 IEEE Journal of Solid-State Circuits  
for Low-Power Short-Range Wireless in 65-nm CMOS.  ...  ., +, JSSC June 2019 1613-1623 A 28-/37-/39-GHz Linear Doherty Power Amplifier in Silicon for 5G Applications.  ... 
doi:10.1109/jssc.2019.2956675 fatcat:laiuae7dtragjijttgfatsldmu

Modular design approach for Watt-level millimeter-wave power amplifiers [article]

JAJ Jaap Essing, AHM Arthur Van Roermund, DMW Domine Leenaerts
Citation for published version (APA): Essing, J. A. J. (2016). Modular design approach for Watt-level millimeter-wave power amplifiers. Eindhoven: Technische Universiteit Eindhoven.  ...  Acknowledgements When I was asked during my M.Sc. graduation project if I was interested to continue as a Ph.D. student in the same group, I immediately knew the answer.  ...  Besides the scientific challenges that come along with such a task, the atmosphere I experienced in the group was of importance to base my decision on to continue my career in the Mixed-Signal Microelectronics  ... 
doi:10.6100/ir851861 fatcat:37gqll6hgffpbe2jpyunoxmakm