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50-GHz-Bandwidth Membrane InGaAsP Electro-Absorption Modulator on Si Platform

Tatsurou Hiraki, Takuma Aihara, Yoshiho Maeda, Takuro Fujii, Tai Tsuchizawa, Kiyoto Takahata, Takaaki Kakitsuka, Shinji Matsuo
2021 Journal of Lightwave Technology  
Since the membrane lateral p-i-n diode structure is beneficial for reducing the RC time constant of a lumped-electrode InP-based EAM, the EO bandwidth of the EAM is around 50 GHz without a 50-ohm termination  ...  We fabricate a membrane InP-based electroabsorption modulator (EAM), in which an InGaAsP-based multiple-quantum-well (MQW) absorption region is buried with an InP layer, on Si-waveguide circuits.  ...  CONCLUSION We demonstrated a 300-μm-long EAM using a membrane InP-based lateral p-i-n diode on a Si platform.  ... 
doi:10.1109/jlt.2021.3082710 fatcat:4b4wxrjwfbek3dxrlok3x63tei

Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review

Younghyun Kim, Jae-Hoon Han, Daehwan Ahn, Sanghyeon Kim
2021 Micromachines  
Therefore, we review heterogeneously integrated optical modulators and switches for the next-generation silicon photonic platform.  ...  Therefore, heterogeneous integration is one of the highly promising approaches, expected to enable high modulation efficiency, low loss, low power consumption, small device footprint, etc.  ...  They recently reported a high-efficiency MZ modulator integrat with a DFB laser using membrane InP-based devices on an Si photonics platform.  ... 
doi:10.3390/mi12060625 pmid:34071362 fatcat:lhs7vm3ltjdobj6bsiz5dnbahy

InP membrane integrated photonics research

Yuqing Jiao, Nobuhiko Nishiyama, J J G M van der Tol, Jorn P van Engelen, Vadim Pogoretskiy, Sander Reniers, Amir Abbas Kashi, Yi Wang, Victor Calzadilla, Marc Spiegelberg, Zizheng Cao, Kevin Williams (+2 others)
2020 Semiconductor Science and Technology  
Recently a novel photonic integration technology, based on a thin InP-based membrane, is emerging.  ...  The enhanced optical confinement in the membrane results in ultracompact active and passive devices. The membrane also enables approaches to converge with electronics.  ...  The carrier-induced effects are dominant in conventional InP/InGaAsP based phase modulators [4] . Their operation is based on a p-i-n diode structure without the active gain medium.  ... 
doi:10.1088/1361-6641/abcadd fatcat:ocnbyqzb7ze7jhbb2xkcgqyzom

Taking silicon photonics modulators to a higher performance level: state-of-the-art and a review of new technologies

Abdul Rahim, Artur Hermans, Benjamin Wohlfeil, Despoina Petousi, Bart Kuyken, Dries Van Thourhout, Roel Baets
2021 Advanced Photonics  
Recent years have seen a paradigm shift where the integration of various electro-refractive and electro-absorptive materials has opened up additional routes toward performant SiPh modulators.  ...  ., plasma dispersion modulators) and new modulator implementations that involve the integration of novel materials with SiPh.  ...  n-type III-V and the p-doped Si layer.  ... 
doi:10.1117/1.ap.3.2.024003 fatcat:ible77m3czcfzb6d45rro6muhi

Electrically Driven Photonic Crystal Nanocavity Devices

G. Shambat, B. Ellis, J. Petykiewicz, M. A. Mayer, A. Majumdar, T. Sarmiento, J. S. Harris, E. E. Haller, J. Vuckovic
2012 IEEE Journal of Selected Topics in Quantum Electronics  
A fabrication procedure for electrically pumping photonic crystal membrane devices using a lateral p-i-n junction has been developed and is described in this study.  ...  At room temperature, we find that our devices behave as single-mode light-emitting diodes (LEDs), which when directly modulated, have an ultrafast electrical response up to 10 GHz corresponding to less  ...  Fiber-Taper Coupled Electro-Optic Modulator We further test the usefulness of our lateral p-i-n structure by demonstrating an electro-optic modulator based out of a cavity coupled to a fiber taper waveguide  ... 
doi:10.1109/jstqe.2012.2193666 fatcat:kvdhpeac7zfc3diub7sr4cedxq

Electrically driven photonic crystal nanocavity devices [article]

Gary Shambat, Bryan Ellis, Jan Petykiewicz, Marie A. Mayer, Arka Majumdar, Tomas Sarmiento, James Harris, Eugene E. Haller, Jelena Vuckovic
2012 arXiv   pre-print
A fabrication procedure for electrically pumping photonic crystal membrane devices using a lateral p-i-n junction has been developed and is described in this work.  ...  At room temperature we find that our devices behave as single-mode light-emitting diodes (LEDs), which when directly modulated, have an ultrafast electrical response up to 10 GHz corresponding to less  ...  Fiber-taper coupled electro-optic modulator We further test the usefulness of our lateral p-i-n structure by demonstrating an electro-optic modulator based out of a cavity coupled to a fiber taper waveguide  ... 
arXiv:1201.0964v1 fatcat:6eh7uollh5e7xiievdrjlehgby

Toward fJ/bit optical communication in a chip

Masaya Notomi, Kengo Nozaki, Akihiko Shinya, Shinji Matsuo, Eiichi Kuramochi
2014 Optics Communications  
For example, recent 80-core CPUs are equipped with micro-routers on each core, which manage complex broadband communication between cores.  ...  In addition, a cutting-edge CPU has adopted network-on-chip architecture [3] .  ...  Typical convertersare laser diodes (LDs), electro-optic (EO) modulators, and photo-diodes (PDs), which are normally based on a cavity or a waveguide with a p-i-n junction.  ... 
doi:10.1016/j.optcom.2013.09.073 fatcat:uvrwkucuhje7dexyok2pu4rc4m

Emerging heterogeneous integrated photonic platforms on silicon

Sasan Fathpour
2015 Nanophotonics  
However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular.  ...  ratio of modulators based on the free-carrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings.  ...  p ++ -doping of silicon for improved ohmic contacts; (h) dopant activation by rapid thermal annealing; (i) metallization and patterning to form the diode contacts.  ... 
doi:10.1515/nanoph-2014-0024 fatcat:ozvzm654lrbhfbh42etxa5cehm

Waveguide-coupled nanopillar metal-cavity light-emitting diodes on silicon

V. Dolores-Calzadilla, B. Romeira, F. Pagliano, S. Birindelli, A. Higuera-Rodriguez, P. J. van Veldhoven, M. K. Smit, A. Fiore, D. Heiss
2017 Nature Communications  
The grating coupler was modeled with two-dimensional finite-difference time-domain (FDTD) simulations as described in the Methods section of the main text.  ...  Then, Au/Ti (40 nm/50 nm) adhesion pads are deposited around the pillar with a lift-off process, whose purpose is to promote the adhesion of silver later on (see Supplementary 8.  ...  to describe our electrically pumped nanopillar LED: a,eff i l nr sp,cav aa ( ) ( ) ( ) V I dn r n r n r n dt qV V      (9) ph ph a,eff sp,cav p () dn n V rn  ... 
doi:10.1038/ncomms14323 pmid:28148954 pmcid:PMC5296653 fatcat:boltbtyk3rh6pizvvbgnbsqkcu

Hybrid and heterogeneous photonic integration

Paramjeet Kaur, Andreas Boes, Guanghui Ren, Thach G. Nguyen, Gunther Roelkens, Arnan Mitchell
2021 APL Photonics  
are suggesting entirely new approaches for precise mass manufacture of integrated circuits with unprecedented variety and flexibility.  ...  This Tutorial provides an overview of the motivation behind the integration of different photonic and material platforms.  ...  Examples include adiabatic tapers between Si 3 N 4 and LiNbO 3 waveguides with transition losses as low as 0.9 dB, 123 between Si 3 N 4 and GaAs with transition losses below 1 dB, 27 and between Si  ... 
doi:10.1063/5.0052700 fatcat:ocm7jtm7qvbj3at6nybvkmvnpm

An introduction to InP-based generic integration technology

Meint Smit, Xaveer Leijtens, Huub Ambrosius, Erwin Bente, Jos van der Tol, Barry Smalbrugge, Tjibbe de Vries, Erik-Jan Geluk, Jeroen Bolk, Rene van Veldhoven, Luc Augustin, Peter Thijs (+43 others)
2014 Semiconductor Science and Technology  
The PIC combines a 20-channel AWG-filter with 50 GHz channel spacing, 20 electro-refractive phase modulators (ERMs) and 20 SOAs.  ...  Both detectors and modulators on SI substrates can operate at frequencies beyond 40 GHz.  ... 
doi:10.1088/0268-1242/29/8/083001 fatcat:qluag4mh5jesleer7jitovsud4

III-nitride photonic cavities

Raphaël Butté, Nicolas Grandjean
2020 Nanophotonics  
as 2D and 1D photonic crystal (PhC) membrane cavities.  ...  Owing to their wide direct bandgap tunability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state  ...  Si and III-As/III-P platforms.  ... 
doi:10.1515/nanoph-2019-0442 fatcat:2ngfd7pt2ffa3msf2p6s3scxpi

Optically pumped VECSELs: review of technology and progress

M Guina, A Rantamäki, A Härkönen
2017 Journal of Physics D: Applied Physics  
Finally, several emerging applications are discussed, with emphasis on the unique application objectives that VECSELs render possible, for example in atom and molecular physics, dermatology and spectroscopy  ...  Phys. 50 383001 View the article online for updates and enhancements. Related content Recent advances in VECSELs Arash Rahimi-Iman -Topical Review A C Tropper, H D Foreman, A Garnache et al.  ...  first AMO system fully based on VECSELs.  ... 
doi:10.1088/1361-6463/aa7bfd fatcat:oo72i3ats5a75kjxlh3i6uzznm

Photonics for artificial intelligence and neuromorphic computing [article]

Bhavin J. Shastri, Alexander N. Tait, Thomas Ferreira de Lima, Wolfram H. P. Pernice, Harish Bhaskaran, C. David Wright, Paul R. Prucnal
2020 arXiv   pre-print
Research in photonic computing has flourished due to the proliferation of optoelectronic components on photonic integration platforms.  ...  Algorithms running on such hardware have the potential to address the growing demand for machine learning and artificial intelligence, in areas such as medical diagnosis, telecommunications, and high-performance  ...  One can directly manipulate carrier concentrations by selectively p-and n-doping the waveguide in a lateral junction [49] .  ... 
arXiv:2011.00111v2 fatcat:e7s4xr5rwbaknk7mkf7mwkmoci

Microscopic theory and numerical simulation of quantum well solar cells

Urs Aeberhard, Bernd Witzigmann, Fritz Henneberger, Yasuhiko Arakawa, Marek Osinski
2010 Physics and Simulation of Optoelectronic Devices XVIII  
We will also present experimental evidence indicating anisotropic emission in devices with highly-strained QWs.  ...  P. Koechlin, P. P. Gunter, ETH Zürich (Switzerland) Organic electro-optic materials are the materials of choice for high speed optical modulators with modulation frequencies greater than 100 GHz.  ...  Günter, ETH Zürich (Switzerland) Organic electro-optic materials are very attractive candidates for future high-speed optical switches and modulators with bandwidths beyond 100 GHz, since their inorganic  ... 
doi:10.1117/12.845478 fatcat:vxfg7swg3bh7rixxoa6qyhhx2u
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