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Modeling, Architecture, and Applications for Emerging Memory Technologies

Yuan Xie
2011 IEEE Design & Test of Computers  
Emerging memory technologiesÀ Àsuch as spintransfer torque RAM (STT-RAM), phase-change RAM (PCRAM), and resistive RAM (RRAM)À Àare being explored as potential alternatives to existing memories in future  ...  Traditional memory hierarchy design consists of embedded memory (such as SRAM and embedded DRAM [eDRAM]) for on-chip caches, commodity DRAM for main memory, and magnetic hard disk drives (HDDs) for storage  ...  Table 1 . 1 Comparison of traditional and emerging memory technologies. 1 Feature SRAM eDRAM STT-RAM PCRAM Density Low High High Very high Speed Very fast Fast Fast for read; slow for  ... 
doi:10.1109/mdt.2011.20 fatcat:rmgrdwnxd5hpnla4whhmanomt4

Challenges and Applications of Emerging Nonvolatile Memory Devices

Writam Banerjee
2020 Electronics  
Compare to other technologies, RRAM is the most promising approach which can be applicable as high-density memory, storage class memory, neuromorphic computing, and also in hardware security.  ...  switching with high-endurance, long retention, and the possibility of three-dimensional integration for high-density applications.  ...  For neuromorphic applications, a high-density, low-power device with at least 5bits/cell storage is necessary.  ... 
doi:10.3390/electronics9061029 fatcat:5dqsulrs3zbexnbbugz2nfjq6e

Overview of candidate device technologies for storage-class memory

G. W. Burr, B. N. Kurdi, J. C. Scott, C. H. Lam, K. Gopalakrishnan, R. S. Shenoy
2008 IBM Journal of Research and Development  
Storage-class memory (SCM) combines the benefits of a solidstate memory, such as high performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage.  ...  Such a device would require a solid-state nonvolatile memory technology that could be manufactured at an extremely high effective areal density using some combination of sublithographic patterning techniques  ...  We then briefly review magnetic RAM, and then turn to phase-change memory, resistive RAM, solid-electrolyte, and organic memory.  ... 
doi:10.1147/rd.524.0449 fatcat:4wnf6cphxfgonisajdb4bghhxm

Advances in Emerging Memory Technologies: From Data Storage to Artificial Intelligence

Gabriel Molas, Etienne Nowak
2021 Applied Sciences  
Then, the progress of emerging memory technologies (based on filamentary, phase change, magnetic, and ferroelectric mechanisms) is presented with a review of the major demonstrations in the literature.  ...  Finally, we discuss how the rise of artificial intelligence and bio-inspired circuits offers an opportunity for emerging memory technology and shifts the application from pure data storage to storage and  ...  Toggle MRAM uses a one transistor, one MTJ (magnetic tunnel junction) cell to provide a simple high-density memory.  ... 
doi:10.3390/app112311254 fatcat:pg4iqzg4yfc2vb2lh2mgkyqafq

Advances in micro‐supercapacitors (MSCs) with high energy density and fast charge‐discharge capabilities for flexible bioelectronic devices—A review

Maria Hepel
2022 Electrochemical Science Advances  
Supercapacitors are a new brand of high-performance nanoengineered devices that match the high capacity of batteries for electric energy storage with the ability of dry capacitors for ultra-fast charging  ...  Thus, supercapacitors are capable of simultaneously providing the high energy-density and high power-density, demanded in a plethora of biosensors and portable electronic devices.  ...  ) design: (a) LbL assembly (right panel) and principles of RAM memory operation (left panel).  ... 
doi:10.1002/elsa.202100222 fatcat:bbtmqyncpfa5jgkxm6aijqahji

Plastic Flexible Memory Chip Devices

Prachi , D.Bhuskat
2016 International Journal Of Engineering And Computer Science  
This novel memory technology can be utilized in a 3D onetime-programmable storage array.  ...  This system is cheapand fast, but cannot be rewritten, so would only be suitable for permanent storage.  ...  There are five major classes of NVMs: resistive RAM (ReRAM) also referred to as memristor, ferroelectric RAM (FeRAM), magnetic RAM (MRAM) , phase change RAM (PCRAM), and flash memory and charge trapping  ... 
doi:10.18535/ijecs/v5i11.28 fatcat:rl3twpwiovcvna42hzdzqnel7m

Advanced materials and technologies for supercapacitors used in energy conversion and storage: a review

M. I. A. Abdel Maksoud, Ramy Amer Fahim, Ahmed Esmail Shalan, M. Abd Elkodous, S. O. Olojede, Ahmed I. Osman, Charlie Farrell, Ala'a H. Al-Muhtaseb, A. S. Awed, A. H. Ashour, David W. Rooney
2020 Environmental Chemistry Letters  
Interest in supercapacitors is due to their high-energy capacity, storage for a shorter period and longer lifetime.  ...  This is explained by the low charge-transfer resistance and the high ion diffusion rate of transition metals sulfides.  ...  This would ultimately offer guidelines on how to design better energy storage devices with a higher power, density and sufficient storage ability.  ... 
doi:10.1007/s10311-020-01075-w fatcat:h24kbiwccndjdl3tseo46injby

Highly reliable, high speed and low power NAND flash memory-based Solid State Drives (SSDs)

Ken Takeuchi, Teruyoshi Hatanaka, Shuhei Tanakamaru
2012 IEICE Electronics Express  
This paper provides a comprehensive review on various state-of-theart memory system architectures and related memory circuits for the highly reliable, high speed and low power NAND flash memory based SSDs  ...  SSDs and emerging storage class non-volatile semiconductor memories such as PCRAM, FeRAM, RRAM and MRAM have enabled innovations in various nano-scale VLSI memory systems for personal computers, multimedia  ...  Especially, the emerging storage class memories (SCM) such as PCRAM, FeRAM, RRAM and MRAM are becoming a viable alternative to commonly used volatile and nonvolatile memories.  ... 
doi:10.1587/elex.9.779 fatcat:outxssmwz5fsdfijxe5tm4ehci

Ion-Driven Electrochemical Random-Access Memory-Based Synaptic Devices for Neuromorphic Computing Systems: A Mini-Review

Heebum Kang, Jongseon Seo, Hyejin Kim, Hyun Wook Kim, Eun Ryeong Hong, Nayeon Kim, Daeseok Lee, Jiyong Woo
2022 Micromachines  
Recently, electrochemical random-access memory (ECRAM) has been dedicatedly designed to realize the desired synaptic characteristics.  ...  To enhance the computing efficiency in a neuromorphic architecture, it is important to develop suitable memory devices that can emulate the role of biological synapses.  ...  Because of its fast operating speed, the CBRAM is expected to be a key element for storage-class memory [36] or reconfigurable applications [37] .  ... 
doi:10.3390/mi13030453 pmid:35334745 pmcid:PMC8950570 fatcat:baywfnvkq5avjnfmp3vy2od7wi

A Survey Of Architectural Approaches for Managing Embedded DRAM and Non-Volatile On-Chip Caches

Sparsh Mittal, Jeffrey S. Vetter, Dong Li
2015 IEEE Transactions on Parallel and Distributed Systems  
Index Terms-Review, classification, embedded DRAM (eDRAM), non-volatile memory (NVM), spin-transfer torque RAM (STT-RAM), resistive RAM (RRAM), phase change RAM (PCM), domain wall memory (DWM), emerging  ...  In this paper, we survey the architectural approaches proposed for designing memory systems and, specifically, caches with these emerging memory technologies.  ...  This is referred to as MLC (multi-level cell) storage and it leads to a significant increase in the storage density of NVMs (see Table 2 ).  ... 
doi:10.1109/tpds.2014.2324563 fatcat:siuvjd3syjad5kfqkpy2mhojny

Application of phase-change materials in memory taxonomy

Lei Wang, Liang Tu, Jing Wen
2017 Science and Technology of Advanced Materials  
For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects.  ...  Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory.  ...  More importantly, the potential of having multi-level access on this newly designed optical cell has also been tested, implying a high density storage function [194] .  ... 
doi:10.1080/14686996.2017.1332455 pmid:28740557 pmcid:PMC5507150 fatcat:3654n4yrkjbm7hqdouhp2owyea

Phase Change and Magnetic Memories for Solid-State Drive Applications

Cristian Zambelli, Gabriele Navarro, Veronique Sousa, Ioan Lucian Prejbeanu, Luca Perniola
2017 Proceedings of the IEEE  
However, due to the increased request for storage density coupled with performance that positions the storage tier closer to the latency of the processing elements, NAND Flash are becoming a serious bottleneck  ...  Several emerging memory technologies are candidate to replace them, namely the Storage Class Memories. Phase Change Memories and Magnetic Memories fall into this category.  ...  Finally, a high-programming-throughput 3D vertical chain-cell-type phase-change memory (VCCPCM) array was shown in [76] .  ... 
doi:10.1109/jproc.2017.2710217 fatcat:fof3pr2ixjfqdd3f226s4qqh7e

Power Consumption Analysis, Measurement, Management, and Issues: A State-of-the-Art Review of Smartphone Battery and Energy Usage

Pijush Kanti Dutta Pramanik, Nilanjan Sinhababu, Bulbul Mukherjee, Sanjeevikumar Padmanaban, Aranyak Maity, Bijoy Kumar Upadhyaya, Jens Bo Holm-Nielsen, Prasenjit Choudhury
2019 IEEE Access  
A good number of recent empirical research works are considered for this comprehensive review, and each of them is succinctly analysed and discussed. FIGURE 2.  ...  For that, a fair understanding of a smartphone's energy consumption factors is necessary for both users and device manufacturers, along with other stakeholders in the smartphone ecosystem.  ...  This implies that RAM always draws power to keep the data alive in its cell. • RAM capacity: The RAM memory is made of MOSFET, which consumes energy constantly.  ... 
doi:10.1109/access.2019.2958684 fatcat:52m6kmfxcngpdmhkyzmcsw4qk4

Eurolab-4-HPC Long-Term Vision on High-Performance Computing [article]

Theo Ungerer, Paul Carpenter
2018 arXiv   pre-print
The objective of the Eurolab-4-HPC vision is to provide a long-term roadmap from 2023 to 2030 for High-Performance Computing (HPC).  ...  This document presents the "EuroLab-4-HPC Long-Term Vision on High-Performance Computing" of August 2017, a road mapping effort within the EC CSA1 Eurolab-4-HPC that targets potential changes in hardware  ...  The RAM uses a fabric of carbon nanotubes (CNT) for saving bits. The resistive state of the CNT fabric determines, whether a one or a zero is saved in a memory cell.  ... 
arXiv:1807.04521v1 fatcat:5neetrgubjhnvcajcktpkohrzq

Non-volatile memory technologies: The quest for ever lower cost

Stefan Lai
2008 2008 IEEE International Electron Devices Meeting  
This review begins with a brief summary of trend of flash memory cost reduction up to now.  ...  Growth of flash memory business over last 20 years was driven by never ending reduction of memory cost through Moore's Law and innovations, and the quest for ever lower cost will continue for many years  ...  innovate to create an even more exciting future for NV memories.  ... 
doi:10.1109/iedm.2008.4796601 fatcat:vv4uak7wf5gv7lnykissude7jm
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