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III–V/Si integration technology for laser diodes and Mach–Zehnder modulators

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo
<span title="2019-03-27">2019</span> <i title="Japan Society of Applied Physics"> <a target="_blank" rel="noopener" href="https://fatcat.wiki/container/pucchvqa2nd23o2rzoaa3xmd7u" style="color: black;">Japanese Journal of Applied Physics</a> </i> &nbsp;

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In addition, the high-efficiency MZM with a 700 μm long membrane InGaAsP/Si metal-oxide-semiconductor capacitor phase shifter shows a V π L of 0.09 Vcm, insertion loss of around 2 dB, and an eye opening  ...  at for 32 Gbit s −1 nonreturn-to-zero signal with pre-emphasis signal inputs.  ...  With the 700 μm long phase shifter device, we also measured the eye diagram at a data rate of 32 Gbit s −1 .  ... 
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Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo. "III–V/Si integration technology for laser diodes and Mach–Zehnder modulators." Japanese Journal of Applied Physics 58.SB (2019) SB0803