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III–V/Si integration technology for laser diodes and Mach–Zehnder modulators

Tatsurou Hiraki, Takuma Aihara, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo
<span title="2019-03-27">2019</span> <i title="Japan Society of Applied Physics"> <a target="_blank" rel="noopener" href="" style="color: black;">Japanese Journal of Applied Physics</a> </i> &nbsp;
In addition, the high-efficiency MZM with a 700 μm long membrane InGaAsP/Si metal-oxide-semiconductor capacitor phase shifter shows a V π L of 0.09 Vcm, insertion loss of around 2 dB, and an eye opening  ...  at for 32 Gbit s −1 nonreturn-to-zero signal with pre-emphasis signal inputs.  ...  With the 700 μm long phase shifter device, we also measured the eye diagram at a data rate of 32 Gbit s −1 .  ... 
<span class="external-identifiers"> <a target="_blank" rel="external noopener noreferrer" href="">doi:10.7567/1347-4065/ab0741</a> <a target="_blank" rel="external noopener" href="">fatcat:6jpgknl5sffmpbqkzylmw6v6gu</a> </span>
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