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3 - 10 GHz Ultra-Wideband Low-Noise Amplifier Using Inductive-Series Peaking Technique with Cascode Common-Source Circuit

Chia-Song Wu, Tah-Yeong Lin, Chien-Huang Chang, Hsien-Ming Wu
2011 Wireless Engineering and Technology  
The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which  ...  Based on our experimental results, the low noise amplifier using the inductive-series peaking technique can obtain a wider bandwidth, low power consumption and high flatness of gain in the 3 -10 GHz.  ...  Additional thanks extend to the WIN Semiconductors Corp. for circuit fabrication.  ... 
doi:10.4236/wet.2011.24034 fatcat:btcm2jo5y5evhgas5rbgpehapq

An Wideband GaN Low Noise Amplifier in a 3×3 mm2Quad Flat Non-leaded Package

Hyun-Woo Park, Sun-Jun Ham, Ngoc-Duy-Hien Lai, Nam-Yoon Kim, Chang-Woo Kim, Sang-Woong Yoon
2015 JSTS Journal of Semiconductor Technology and Science  
An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented.  ...  Index Terms-GaN, inductive peaking, low noise amplifier (LNA), quad flat non-leaded (QFN) package, resistive feedback, source degeneration  ...  In addition to the resistive feedback, series and shunt inductive peaking techniques are used to increase the bandwidth. Fig. 2 shows a simplified circuit of the peaking techniques.  ... 
doi:10.5573/jsts.2015.15.2.301 fatcat:vonn3z4itrg53h4f2w766j3lse

A 3-14 GHZ Low Noise Amplifier for Ultra Wide Band Applications

Vaithianathan Venkatesan
2012 International Journal of VLSI Design & Communication Systems  
A dual source degenerated resistive current reuse is used as an input stage and a cascode stage with shunt-series peaking is used to enhance the bandwidth and reverse isolation.  ...  This paper presents an ultra wide band (UWB) low noise amplifier (LNA) with very high gain, better input matching, low noise figure, better linearity and low power consumption.  ...  The LNA circuit is composed of three stages namely dual-source degenerated resistive current reuse, cascode amplifier with shunt-series inductive peaking and common drain amplifier.  ... 
doi:10.5121/vlsic.2012.3112 fatcat:4pfsqlazurewre3tdm6wfinbxa

GaAs wideband low noise amplifier design for breast cancer detection system

Lei Yan, Viktor Krozer, Sebastien Delcourt, Vitaliy Zhurbenko, Tom Keinicke Johansen, Chenhui Jiang
2009 2009 Asia Pacific Microwave Conference  
This paper presents ultra-wideband stable low-noise amplifier MMIC with cascode and source follower buffer configuration using GaAs technology.  ...  The low-noise amplifier circuit operates across a band of 0.3 to 10 GHz with a gain of around 14 dB and the measured noise figure NF below 1.5 dB up to 8 GHz.  ...  A series of modern sensing systems require an operational bandwidth of 10 GHz with very low noise signal performance.  ... 
doi:10.1109/apmc.2009.5385381 fatcat:cghlb4jaczdshmlaiijad7z35y


Sew-Kin Wong, Fabian Kung, Siti Maisurah, Mohd Nizam Bin Osman, See Jin Hui
2009 Progress In Electromagnetics Research C  
A single-stage ultra-wideband (UWB) CMOS low noise amplifier (LNA) employing interstage matching inductor on conventional cascode inductive source degeneration structure is presented in this paper.  ...  The proposed LNA is implemented in 0.18 µm CMOS technology for a 3 to 5 GHz ultra-wideband system.  ...  Various topologies have been used in the implementation of wideband low noise amplifiers.  ... 
doi:10.2528/pierc09062202 fatcat:zz4arohenjhnhoa4kwn2fwpdb4


Neelam Gautam, Manish Kumar, Abhay Chaturvedi
2015 ICTACT Journal on Microelectronics  
This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) using two stage cascading topology to obtain high gain.  ...  Inductive degeneration and peaking inductor techniques are used to obtain wideband matching and flatness of gain.  ...  CONCLUSION A 0.18m TSMC CMOS ultra-wideband low noise amplifier is proposed using cascading topology to improve the gain.  ... 
doi:10.21917/ijme.2015.0012 fatcat:un2bf6d33zb4jgugvrpg5xssae

A low supply voltage SiGe LNA for ultra-wideband frontends

D. Barras, F. Ellinger, H. Jackel, W. Hirt
2004 IEEE Microwave and Wireless Components Letters  
Index Terms-Bipolar CMOS (BiCMOS), low-noise amplifier (LNA), microwave monolithic integrated circuit (MMIC), SiGe, ultra-wideband (UWB).  ...  It operates from 3.4 to 6.9 GHz, which corresponds with the low end of the available UWB radio spectrum. The LNA has a peak gain of 10 dB and a noise figure less than 5 dB over the entire bandwidth.  ...  The circuit is biased with 3.5 mA and operates with a low supply voltage of 1 V. Figs. 2 and 3 show the measured and simulated s-parameters and noise figure for 50-source and load impedances.  ... 
doi:10.1109/lmwc.2004.834556 fatcat:apauwnptcfdofnxgjnzjfuy7qu

Design of UWB Cascode SiGe BiCMOS LNA with current reuse

Chunbao Ding, Wanrong Zhang, Hongyun Xie, Pei Shen, Liang Chen, Zhengjie Guo, Guanghui Xing, Yujie Zhang, Zhiyi Lu
2012 2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT)  
A Cascode SiGe BiCMOS low-noise amplifier (LNA) is presented for ultra-wideband (UWB) application.  ...  The emitter degenerative inductive technique is employed to achieve input impedance matching and optimize the noise performance.  ...  The common base stage in the Cascode amplifier with emitter degenerative inductive technique has a current gain close to unity and adds some noise to the LNA.  ... 
doi:10.1109/icmmt.2012.6229998 fatcat:oaec3gn6nnbhxa2t2ekkrgjmsy

Design technique of broadband CMOS LNA for DC - 11GHz SDR

Anh Tuan Phan, Ronan Farrell
2010 IEICE Electronics Express  
This paper presents a DC-11 GHz CMOS low noise amplifier (LNA) for software-defined radio (SDR).  ...  Simulation shows power gain of 11 ±4 dB and the NF ranging from 1.8 to 3 dB in 0.4-11 GHz band. The LNA achieves an average IIP3 of −10 dBm while consumes only 5.3 mW.  ...  Chen, "An inductor-coupling resonated CMOS low noise amplifier for 3.1-10.6 GHz ultra-wideband system," IEEE Int. Symp. Circuits Syst., pp. 221-224, May 2009.  ... 
doi:10.1587/elex.7.190 fatcat:xkspfrv57nct7c5qr3d57wsbii

High frequency of low noise amplifier architecture for WiMAX application: A review

Abu Bakar Ibrahim, Che Zalina Zulkifli, Shamsul Arrieya Ariffin, Nurul Husna Kahar
2021 International Journal of Power Electronics and Drive Systems (IJPEDS)  
The low noise amplifier (LNA) circuit is exceptionally imperative as it promotes and initializes general execution performance and quality of the mobile communication system.  ...  The LNA architecture has recently been designed to concentrate on a single transistor, cascode, or cascade constrained in gain, bandwidth, and noise figure.  ...  It uses an inter-stage matching inductor for conventional inductive source structure cascode. The CMOS technology has been applied at 0.18 μm with an ultra-wideband 3-5 GHz system.  ... 
doi:10.11591/ijece.v11i3.pp2153-2164 fatcat:gfnxnpagxbejtiz6dvnjsnhtki

A five-octave broadband LNA MMIC using bandwidth enhancement and noise reduction technique

Lin Yang, Lin-An Yang, Taotao Rong, Zhi Jin, Yue Hao
2019 IEICE Electronics Express  
The multi-peaking bandwidth enhancement and noise reduction technique is proposed for a cascode topology to significantly improve the performance of the LNA.  ...  This letter presents the design and fabrication of a five-octave broadband low noise amplifier (LNA) using 0.1-μm GaAs pseudomorphic high-electron mobility transistor (pHEMT) technology.  ...  For designing UWB amplifiers, Darlington configurations [5, 6, 7] , feedback techniques [8] [9] [10] [11] [12] [13] , inductive-peaking techniques [14] [15] [16] [17] , and distributed amplifiers (DAs  ... 
doi:10.1587/elex.16.20190096 fatcat:t6jjq4vdkvexvjjkse6ettk64y

Highly compact 3.1 -10.6 GHz UWB LNA in SiGe HBT technology

J. Dederer, S. Chartier, T. Feger, U. Spitzberg, A. Trasser, H. Schumacher
2007 2007 European Microwave Integrated Circuit Conference  
The circuit delivers 19.6 dB peak gain with gain variations of 1.3 dB within the entire band from 3.1 to 10.6 GHz.  ...  Broadband noise and power matching has been achieved with a cascode topology using resistive shunt feedback in combination with a diode DC level shifter.  ...  Commonly used techniques in designing broadband amplifiers are feedback, inductive and capacitive peaking methods or distributed amplification.  ... 
doi:10.1109/emicc.2007.4412695 fatcat:wmejm3p6krgy5nvkzfz3bd65tm

A 3.1 - 4.8 GHz CMOS UWB Power Amplifier Using Current Reused Technique

S. A. Z. Murad, R. K. Pokharel, H. Kanaya, K. Yoshida
2009 2009 5th International Conference on Wireless Communications, Networking and Mobile Computing  
This paper describes the design of a 3.1 to 4.8 GHz CMOS power amplifier (PA) for ultra-wideband (UWB) applications using TSMC 0.18-µm CMOS technology.  ...  The UWB PA proposed in this paper employs cascode topology with an additional common source stage to achieve high power gain.  ...  Using cascode topology with additional common source allows increasing power gain.  ... 
doi:10.1109/wicom.2009.5305455 fatcat:aefojfjxx5depbsehiup5ag2ja

A Novel Low Power UWB Cascode SiGe BiCMOS LNA with Current Reuse and Zero-Pole Cancellation [article]

Chunbao Ding, Wanrong Zhang, Dongyue Jin, Hongyun Xie, Pei Shen, Liang Chen
2012 arXiv   pre-print
A low power cascode SiGe BiCMOS low noise amplifier (LNA) with current reuse and zero-pole cancellation is presented for ultra-wideband (UWB) application.  ...  The LNA is composed of cascode input stage and common emitter (CE) output stage with dual loop feedbacks.  ...  The emitter degenerative inductive technique is adopted to achieve wideband input impedance matching, as shown in Fig. 3 .  ... 
arXiv:1206.3562v1 fatcat:xmque5cxxrhypbz74ipftxwswq

A Millimeter-Wave (23–32 GHz) Wideband BiCMOS Low-Noise Amplifier

Mohamed El-Noza, Edgar Sanchez-Sinencio, Kamran Entesari
2010 IEEE Journal of Solid-State Circuits  
This paper presents a 23-32 GHz wideband BiCMOS low-noise amplifier (LNA). The LNA utilizes coupled-resonators to provide a wideband load.  ...  It achieves a voltage gain of 12 dB, 3-dB bandwidth of 9 GHz, noise figure between 4.5-6.3 dB, linearity higher than 6.4 dBm with a power consumption of 13 mW from a 1.5 V supply.  ...  Wideband low-noise amplifiers (LNAs) using silicon were implemented for low-GHz frequencies [2] .  ... 
doi:10.1109/jssc.2009.2038126 fatcat:kjjjf77upnhtffyvhby6r7pagi
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