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1.8 V Low-Transient-Energy Adaptive Program-Voltage Generator Based on Boost Converter for 3D-Integrated NAND Flash SSD

Koichi Ishida, Tadashi Yasufuku, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi
2011 IEEE Journal of Solid-State Circuits  
In this paper we present an adaptive program-voltage generator for 3D-integrated solid state drives (SSDs) based on a boost converter.  ...  Index Terms-Solid state drive, NAND flash memory, program-voltage generator, boost converter, charge pump, high-voltage MOS, adaptive controller.  ...  Iwasaki, and the Toshiba NAND team for their support and chip fabrication.  ... 
doi:10.1109/jssc.2011.2131810 fatcat:72hhiiifcncnji7r7v2rea7y6i

Testing STT-MRAM: Manufacturing Defects, Fault Models, and Test Solutions

Lizhou Wu, Siddharth Rao, Mottaqiallah Taouil, Erik Jan Marinissen, Gouri Sankar Kar, Said Hamdioui
2021 2021 IEEE International Test Conference (ITC)  
., open, short, or bridge), which is then injected into our STT-MRAM netlist for fault analysis. Test development is also covered based on the fault modeling results.  ...  , radiation immunity, and low-power consumption.  ...  V DD was set to 1.6 V and V WL at 1.8 V. Note that boosting the voltage on the 9.5.  ... 
doi:10.1109/itc50571.2021.00022 fatcat:4hlsp34pcrgexkssoxu5m5c25a

Towards Oxide Electronics: a Roadmap

M. Coll, J. Fontcuberta, M. Althammer, M. Bibes, H. Boschker, A. Calleja, G. Cheng, M. Cuoco, R. Dittmann, B. Dkhil, I. El Baggari, M. Fanciulli (+44 others)
2019 Applied Surface Science  
In general, low mobility is observed for p-type oxides due to large hole mass or hopping transport mechanisms.  ...  Microelectronics is based on semiconductors, generally using Si(0 0 1) wafers, but their incompatibility with most oxides makes the epitaxial growth of functional oxides on semiconducting wafers difficult  ...  Uzuhashi for their technical assistance for Fig. 36 . We acknowledge support from the ImPACT Program of Council for Science, Technology and Innovation, Japan.  ... 
doi:10.1016/j.apsusc.2019.03.312 fatcat:3rqm2kwuv5gk3dpmb4sv7mg6ui

A Survey of Big Data Machine Learning Applications Optimization in Cloud Data Centers and Networks [article]

Sanaa Hamid Mohamed, Taisir E.H. El-Gorashi, Jaafar M.H. Elmirghani
2019 arXiv   pre-print
The MapReduce programming model and its widely-used open-source platform; Hadoop, are enabling the development of a large number of cloud-based services and big data applications.  ...  Wide ranging efforts were devoted to optimize systems that handle big data in terms of various applications performance metrics and/or infrastructure energy efficiency.  ...  The author in [301] proposed a system for exascale computation that includes low-power processors, byte-addressable NAND flash as main memory, and Dynamic RAM (DRAM) as cache for the flash.  ... 
arXiv:1910.00731v1 fatcat:kvi3br4iwzg3bi7fifpgyly7m4

Fabrication, Characterization and Integration of Resistive Random Access Memories

Jury Sandrini
2017
These memory technologies, based on charge storage mechanisms, are suffering from the easy loss of the stored state for devices scaled below 10 nm.  ...  This thesis focuses on the fabrication, characterization and integration of ReRAM devices.  ...  Acknowledgements Key words: nanotechnology, emerging memory technology, non volatile memory, resistive random access memory, ReRAM, bipolar resistive switching, selector device, CMOS integration.  ... 
doi:10.5075/epfl-thesis-8097 fatcat:hkoqcomecjflval6l3xkgpbdlu

Towards Oxide Electronics: a Roadmap [article]

M. Coll, J. Fontcuberta, M. Althammer, M. Bibes, H. Boschker, A. Calleja, G. Cheng, M. Cuoco, R. Dittmann, B. Dkhil, I. El Baggari, M. Fanciulli (+45 others)
2020
Uzuhashi for their technical assistance for Fig. 36 . We acknowledge support from the ImPACT Program of Council for Science, Technology and Innovation, Japan.  ...  Nilsen is acknowledged for valuable discussions on the current status of ALD perovskites. Acknowledgements Author thanks fruitful discussions with Dr. J. Santiso.  ...  In order to compete with Flash memory, ReRAM should display characteristics such as R oFF /R oN > 10, Write voltage < 5 V, Read voltage 0.1-0.5 V, scalability to < 22 nm and/or 3D stacking, switching speeds  ... 
doi:10.34657/3597 fatcat:2w75pizz7bfo7bywgkpcevn43i