Crossed Andreev reflection-induced magnetoresistance release_zs5eppz74rgznooi32eptl5eyy

Abstract

We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin-valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.
In text/plain format

Archived Content

There are no accessible files associated with this release. You could check other releases for this work for an accessible version.