A Dual Four-Quadrant Photodetector Based on Near-Infrared Enhanced Nanometer Black Silicon
release_vq667iansna7bcunw4lxwwgzc4
by
Guanyu Mi,
Jian Lv,
Longcheng Que,
Yi Zhang,
Yun Zhou,
Zhongyuan Liu
2021 Volume 16, Issue 1, p38
Abstract
In this paper, a new preparation process of nanometer black silicon is proposed, by which high trapping optical Se-doped black silicon material is prepared by nanosecond pulsed laser ablation of high-resistance silicon coated with Se film in HF gas atmosphere. The results indicate that the average absorptivity of 400-2200 nm band before annealing is 96.81%, and the absorptivity maintains at 81.28% after annealing at 600 degrees. Meanwhile, black silicon prepared under the new technology is used in double four-quadrant photodetector, the results show that, at a reversed bias of 50 V, the average unit responsiveness is 0.528 A/W at 1060 nm and 0.102 A/W at 1180 nm, and the average dark current is 2 nA at inner quadrants and 8 nA at outer quadrants. The dual four-quadrant photodetector based on near-infrared enhanced black silicon has the advantages of high responsiveness, low dark current, fast response and low crosstalk, hence it is appropriate for a series of direction of applications, such as night vision detection and medical field.
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