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{'sha1': '87f37c4d5ebc2c0008854f2c297d8a8bb3046fa6', 'content': 'Fourier Transform Infrared Spectroscopy (FTIR) is employed to investigate surface and interface properties of several self-assembled monolayers (SAMs) systems on silicon and applications in optimizing attachment of biomolecules and Atomic Layer Deposition (ALD) of high-k metal oxides are explored. The SAM systems include silane-based SAMs on SiO2 and alkene-based SAMs (with different terminal groups) on H-terminated Si (111).Modification of SiO2 by silane-based SAMs is presented first with emphasis on SAM/SiO2 interfacial characteristics. Spectral changes in the longitudinal-optical (LO) phonon mode of the SiO2 substrate after modification with silane-based SAMs suggest the formation of a dense cross-linked SAM chemically attached to the SiO2 substrate through Sisubstrate-O-Si bonds. A novel method is developed to prepare -NH2 terminated surface for optimized biomolecules surface attachment using (3-Aminopropyl) triethoxysilane (APTES) and hydrogen-terminated Si (111). It is demonstrated that APTES can form more stable siloxane layers on hydrogen-terminated Si (111) without extra pre-hydration or pre-oxidization of surface required by conventional silane-based methods. The formation, structure and stability of alkene-based SAMs thermally grafted on H- terminated silicon (111) via Si-C bond (Si-C SAMs) has been investigated by infrared spectroscopy. The SAM with reactive terminal group (-COOH) shows higher thermal stability than SAM with -CH3 termination. The decomposition of alkyl chains at high temperature is through β-hydride elimination with cleavage of Si-C bond. The alkene-based SAMs are further used as model systems to study reaction and nucleation processes in ALD. The ALD of aluminum oxide on SAM-functionalized silicon with various terminal groups (-CH3, - NH2, -COOH and -OH) was systematically investigated using in situ FTIR. The results show that all Si-C bound SAMs with different terminal groups efficiently eliminate the formation of unwanted interfacial silicon oxide during ALD growth. The result [...]', 'mimetype': 'text/plain', 'lang': 'en'}
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{'index': 0, 'creator_id': None, 'creator': None, 'raw_name': 'Meng Li', 'given_name': 'Meng', 'surname': 'Li', 'role': 'author', 'raw_affiliation': None, 'extra': None}
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{'doi': '10.7282/t3ht2pqg', 'wikidata_qid': None, 'isbn13': None, 'pmid': None, 'pmcid': None, 'core': None, 'arxiv': None, 'jstor': None, 'ark': None, 'mag': None, 'doaj': None, 'dblp': None, 'oai': None, 'hdl': None}
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published
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article-journal
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2007
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Modification of silicon by self-assembled monolayers for application in nano-electronics and biology
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i4zwmh3bqbe5pipnfb2oktjydu
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