Hole spin polarization in GaAlAs:Mn structures release_r4qwri63pjet3jm2qsepep3r2e

by A. Ghazali, I. C. da Cunha Lima, M. A. Boselli

Released as a article .

2000  

Abstract

A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory.
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Type  article
Stage   submitted
Date   2000-10-06
Version   v1
Language   en ?
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