Hole spin polarization in GaAlAs:Mn structures
release_r4qwri63pjet3jm2qsepep3r2e
by
A. Ghazali,
I. C. da Cunha Lima,
M. A. Boselli
2000
Abstract
A self-consistent calculation of the electronic properties of GaAlAs:Mn
magnetic semiconductor quantum well structures is performed including the
Hartree term and the sp-d exchange interaction with the Mn magnetic moments.
The spin polarization density is obtained for several structure configurations.
Available experimental results are compared with theory.
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