@article{папикян_арутюнян_агамалян_овсепян_хачатурова_петросян_бадалян_кафадарян_2022, 
  title={Термоэлектрические и мемристивные особенности структур Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- и Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag}, 
  volume={56}, 
  DOI={10.21883/ftp.2022.03.52126.9770}, 
  abstractNote={<jats:p>
    Abstract Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of Sb2Te3/Sb2S3/Sb2Te3 has a semiconductor behavior, the resistivity is an order of magnitude higher than the resistivity of the Sb2Te3 film; the Seebeck coefficient of Sb2Te3/Sb2S3/Sb2Te3 is 1.5 and 3 times higher than the Seebeck coefficient of the film and single-crystal Sb2Te3, respectively. The currentvoltage characteristics of the Sb2Te3 film exhibit memristive properties with unipolar resistive switching, whereas Sb2Te3/Sb2S3/Sb2Te3 can be considered as a memristor with a parallel connected capacitance.
   </jats:p>}, 
  publisher={Ioffe Institute Russian Academy of Sciences}, 
  author={Папикян, А. and Арутюнян, С. and Агамалян, Н. and Овсепян, Р. and Хачатурова, А. and Петросян, С. and Бадалян, Г. and Кафадарян, Е.}, 
  year={2022}
  }