@article{uličná_arnou_abbas_togay_welch_bliss_malkov_walls_bowers_2019, title={Deposition and application of a Mo–N back contact diffusion barrier yielding a 12.0% efficiency solution-processed CIGS solar cell using an amine–thiol solvent system}, DOI={10.1039/c8ta12089g}, abstractNote={
The use of a Mo–N barrier for solution-processed CIGS results in reduced MoSe2 formation. This enabled longer selenization time, enhanced grain growth and performance.
}, publisher={Royal Society of Chemistry (RSC)}, author={Uličná and Arnou and Abbas and Togay and Welch and Bliss and Malkov and Walls and Bowers}, year={2019} }