@article{nomura_wang_yamaguchi_nakamura_eshita_ozawa_takai_mihara_hikosaka_hamada_et al._2018, 
  title={Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO x  bottom electrode for the La-doped Pb(Zr,Ti)O3 ferroelectric capacitor}, 
  volume={57}, 
  DOI={10.7567/jjap.57.11uf01}, 
  number={11S}, 
  publisher={Japan Society of Applied Physics}, 
  author={Nomura and Wang and Yamaguchi and Nakamura and Eshita and Ozawa and Takai and Mihara and Hikosaka and Hamada and et al.}, 
  year={2018}, 
  month={Aug}
  }