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Signatures of a Pressure-Induced Topological Quantum Phase Transition in
BiTeI
release_gczrznv3r5a7hpold3ooipevau
by
Xiaoxiang Xi,
Chunli Ma,
Zhenxian Liu,
Zhiqiang Chen,
Wei Ku,
H.
Berger,
C. Martin,
D. B. Tanner,
G. L. Carr
Released
as a article
.
2013
Abstract
We report the observation of two signatures of a pressure-induced topological
quantum phase transition in the polar semiconductor BiTeI using x-ray powder
diffraction and infrared spectroscopy. The x-ray data confirm that BiTeI
remains in its ambient-pressure structure up to 8 GPa. The lattice parameter
ratio c/a shows a minimum between 2.0-2.9 GPa, indicating an enhanced c-axis
bonding through pz band crossing as expected during the transition. Over the
same pressure range, the infrared spectra reveal a maximum in the optical
spectral weight of the charge carriers, reflecting the closing and reopening of
the semiconducting band gap. Both of these features are characteristics of a
topological quantum phase transition, and are consistent with a recent
theoretical proposal.
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