D-1 反応性スパッタ法による窒化アルミニウム薄膜の作製とその特性(バルク波・表面波デバイス)
D-1 Preparation and Characteristics of Aluminum Nitride Thin Films by Reactive Sputtering release_cmvtuy6kqrdutd3tcijm6mezfa

by Keigo Nagao, Eiji Masui, Takuya Maruyama, Kousuke Nishimura, Tetsuo Yamada

Published in Proceedings of Symposium on Ultrasonic Electronics by Institute for Ultrasonic Elecronics.

Volume 25, Issue 0, p149-150

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