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Impact of Mole Fraction Variation on Nanoscale SiGe Hybrid FinFET on Insulator
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Published
in VOLUME-8 ISSUE-10, AUGUST 2019, REGULAR ISSUE
by Blue Eyes Intelligence Engineering and Sciences Engineering and Sciences Publication - BEIESP.
2019 Issue 12S2, p61-66
Abstract
This work investigates the performance of SiGe Hybrid JunctionLess FinFET (HJLFinFET) on insulator with different mole fraction x. The band gap difference for different mole fractions are explored. Impact of electrical characteristics and SCE of HJLFinFET are analyzed with fin width 10nm and varying gate length from 5nm-40nm for different mole fraction. Synopsys Sentaurus TCAD tool(sprocess and sdevice) are used in Device modelling and device simulation. Simulation results shows improvement in On current, DIBL and SS. For high performance application SiGe with mole fraction less than 0.3 at channel length less than 10nm are suitable because of the bandgap value is similar to silicon.
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