A Study of Gate Length and Source-Drain Bias on Electron Transport Properties in SiC Based MOSFETs Using Monte Carlo Method

by Hadi Arabshahi

Published in International Journal of Electrical and Computer Engineering (IJECE) by Institute of Advanced Engineering and Science.

2011

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Date 2011-09-26

DOI 10.11591/ijece.v1i1.18

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ISSN-L: 2088-8708

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A Study of Gate Length and Source-Drain Bias on Electron Transport Properties in SiC Based MOSFETs Using Monte Carlo Method release_6sdb3ixmqzhfhpvspahopxdgzi