Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles release_3q3ve4jbxrfebjume45syqdwi4

Abstract

Hydrogenated amorphous substoichiometric silicon carbon alloys (a-SiC:H) with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi-transparent boron doped nano-crystalline diamond coated Ti grids. The presence of Ge NPs embedded in the amorphous phase has been confirmed by transmission electron microscopy and energy-dispersive X-ray spectroscopy analyses. Current-voltage (<jats:italic>I–V</jats:italic>) characteristics and near infrared electroluminescence (EL) spectra were measured to compare performance of diodes. The relatively strong EL appears in diodes with integrated Ge NPs near the direct band-gap transition of Ge at about 0.82 eV with an intensity strongly correlating with current density. However, it has also been found that Ge NPs integrated into a-SiC:H significantly deteriorates diode <jats:italic>I–V</jats:italic> characteristic.
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