Epitaxially ideal oxide–semiconductor interfaces: Silicate adlayers on hexagonal (0001) and (0001̄) SiC surfaces

by J. Bernhardt, J. Schardt, U. Starke, K. Heinz

Published in Applied Physics Letters by AIP Publishing.

1999 Volume 74, p1084-1086

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Date 1999-02-22
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DOI 10.1063/1.123489

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ISSN-L: 0003-6951

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Epitaxially ideal oxide–semiconductor interfaces: Silicate adlayers on hexagonal (0001) and (0001̄) SiC surfaces release_3hffnfi3srhulflvycroynwn6i