Development of novel semiconductor based photodetector devices release_3egyswvxzvg3rfbarw25hj3lly

Abstract

This thesis investigates novel range semiconductor materials and structures for use in optoelectronic devices operating from UV to mid-IR. These devices have an abundant variety of applications, including optical communications and imaging. The studies primarily focus on the electronic band structure of the materials and how this impacts device performance. Dilute bismide III-V alloys are a material of great interest for IR applications, especially with the band structure engineering that can be carried out to fulfil the condition where the spin-orbit splitting energy, ∆
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