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Bulk-doping-controlled implantation site of boron in silicon
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[as of editgroup_5saegl3o2vc5josdswaoeo36te]
by
H. Metzner,
G. Sulzer,
W. Seelinger,
B. Ittermann,
H.-P. Frank,
B. Fischer,
K.-H. Ergezinger,
R. Dippel,
E. Diehl,
H.-J. Stöckmann,
H. Ackermann
Published
in Physical Review B (Condensed Matter)
by American Physical Society (APS).
1990 Volume 42, Issue 17, p11419-11422
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