ISSN Portal
The Keepers Registry (preservation)
SHERPA/RoMEO (access policies)
IEEE Journal of the Electron Devices Society
container_pmmkglpiz5d67jjxidfrft45im
IEEE
Homepage URLs
http://ieeexplore.ieee.org/servlet/opac?punumber=6245494 |
https://ieeexplore.ieee.org/xpl/aboutJournal.jsp?punumber=6245494#AimsScope |
https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494 |
Example Publications
Capacitance Analysis of Transient Behaviour Improved Metal-Insulator-Semiconductor Tunnel Diodes with Ultra Thin Metal Surrounded Gate
Sung-Wei Huang, Jenn-Gwo Hwu
2021
|
IEEE Journal of the Electron Devices Society
doi:10.1109/jeds.2021.3123332
Ionization Damage Effects of Pulse Discharge Circuit Switched by Anode-Short MOS-Controlled Thyristor
Lei Li, Ze-Hong Li, Jin-Ping Zhang, Yu-Zhou Wu, Xiao-Chi Chen, Min-Ren, Bo Zhang, Yuan Jian
2020
|
IEEE Journal of the Electron Devices Society
doi:10.1109/jeds.2020.3030880
Leading-Edge Thin-Layer MOSFET Potential Modeling Toward Short-Channel Effect Suppression and Device Optimization
F. Avila Herrera, Y. Hirano, T. Iizuka, M. Miura-Mattausch, H. Kikuchihara, D. Navarro, H. J. Mattausch, A. Ito
2019
|
IEEE Journal of the Electron Devices Society
doi:10.1109/jeds.2019.2948648
Modeling the Performance of Single-Bit and Multi-Bit Quanta Image Sensors
Eric R. Fossum
2013
|
IEEE Journal of the Electron Devices Society
doi:10.1109/jeds.2013.2284054 wikidata:Q55921156
Thermal Field Analysis for New AlGaN/GaN HEMT with Partial Etched AlGaN Layer
Baoxing Duan, Luoyun Yang, Hao Wu, Yintang Yang
2020
|
IEEE Journal of the Electron Devices Society
doi:10.1109/jeds.2020.2986261